Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Konferenzbeitrag
2018Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing
Kocher, Matthias; Rommel, Mathias; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton
Poster
2018Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing
Kocher, Matthias; Rommel, Mathias; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.
Konferenzbeitrag
2018Impact of Al-ion implantation on the formation of deep defects in n-type 4H-SiC
Weiße, Julietta; Hauck, Martin; Krieger, Michael; Erlekampf, Jürgen; Mitlehner, Heinz; Bauer, Anton J.; Rommel, Mathias; Häublein, Volker; Erlbacher, Tobias; Csato, Constantin; Rüb, Michael; Akhmadaliev, Shavkat; Frey, Lothar
Konferenzbeitrag
2018Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations
Künneth, C.; Kölbl, S.; Wagner, H.E.; Häublein, V.; Kersch, A.; Alt, H.C.
Zeitschriftenaufsatz
2017Point contact current voltage measurements of 4H-SiC samples with different doping profiles
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Konferenzbeitrag
2016Ion implantation of polypropylene films for the manufacture of thin film capacitors
Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Djupmyr, M.
Konferenzbeitrag
2016Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Poster
2016TiO2 nanotubes: Nitrogen-ion implantation at low dose provides noble-metal-free photocatalytic H2-evolution activity
Zhou, X.; Häublein, V.; Liu, N.; Nguyen, N.T.; Zolnhofer, E.M.; Tsuchiya, H.; Killian, M.S.; Meyer, K.; Frey, L.; Schmuki, P.
Zeitschriftenaufsatz
2015Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities
Alt, H.C.; Wagner, H.E.; Glacki, A.; Frank-Rotsch, C.; Häublein, V.
Zeitschriftenaufsatz
2014Modification of polypropylene films for thin film capacitors by ion implantation
Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Grimm, W.
Konferenzbeitrag
2014Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth
Maier, R.; Häublein, V.; Ryssel, H.
Konferenzbeitrag
2014Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2013Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
Häublein, V.; Temmel, G.; Mitlehner, H.; Rattmann, G.; Strenger, C.; Hürner, A.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2013Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
Ouennoughi, Z.; Strenger, C.; Bourouba, F.; Haeublein, V.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz
2013Simulation and design optimization of transparent heaters for spectroscopic micro cells
Völlm, H.; Herrmann, J.; Maier, R.; Feili, D.; Häublein, V.; Ryssel, H.; Seidel, H.
Konferenzbeitrag
20124H-SiC MOSFETs with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2012Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.
Konferenzbeitrag
2012Nano-analytical and electrical characterization of 4H-SiC MOSFETs
Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Lefebvre, M.; Bedel-Pereira, E.; Cristiano, F.; Strenger, C.; Häublein, V.; Bauer, A.J.
Konferenzbeitrag
2012Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation
Häublein, V.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz
2012Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
Maier, R.; Häublein, V.; Ryssel, H.; Völlm, H.; Feili, D.; Seidel, H.; Frey, L.
Konferenzbeitrag
2012Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications
Daves, W.; Kraus, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
20114H-SiC n-MOSFET logic circuits for high temperature operation
Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2011Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications
Daves, W.; Krauss, A.; Behnel, N.; Häublein, V.; Bauer, A.; Frey, L.
Zeitschriftenaufsatz
2011Comparative study on metallization and passivation materials for high temperature sensor applications
Daves, W.; Krauss, A.; Le-Huu, M.; Kronmüller, S.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2011Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters
Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz
2011Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2011Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2011Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC
Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2010Deep doping profiles in silicon created by MeV hydrogen implantation: Influence of implantation parameters
Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2010Effective work function tuning in high-kappa dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz
2010The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon
Laven, J.G.; Job, R.; Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2010The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon
Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L.; Job, R.; Laven, J.G.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminum implanted 4H SiC
Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Poster
2010Lanthanoid implantation for effective work function control in NMOS high-k/metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2010Modeling of the effective work function instability in metal/high-kappa dielectric stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz
2010NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications
Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2009Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Lanthanum implantation for threshold voltage control in metal/high-k devices
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Simulation of mass interferences considering charge exchange events and dissociation of molecular ions during extraction
Häublein, V.; Frey, L.; Ryssel, H.
Konferenzbeitrag
2008Threshold voltage engineering by lanthanide doping of the MOS gate stack
Fet, A.; Häublein, V.; Ryssel, H.
Konferenzbeitrag
2006The impact of mass resolution on molybdenum contamination for B, P, BF, and as implantations
Häublein, V.; Frey, L.; Ryssel, H.
Konferenzbeitrag
2006Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes
Ghicov, A.; Macak, J.M.; Tsuchiya, H.; Kunze, J.; Haeublein, V.; Frey, L.; Schmuki, P.
Zeitschriftenaufsatz
2006Kontaminationsprozesse in der Ionenimplantation
Häublein, V.
Dissertation
2006TiO2 nanotube layers: Dose effects during nitrogen doping by ion implantation
Ghicov, A.; Macak, J.M.; Tsuchiya, H.; Kunze, J.; Haeublein, V.; Kleber, S.; Schmuki, P.
Zeitschriftenaufsatz
2005Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction
Häublein, V.; Frey, L.; Ryssel, H.
Konferenzbeitrag
2005Investigations into the wear of a WL10 ion source
Häublein, V.; Sadrawetz, S.; Frey, L.; Martinz, H.-P.; Ryssel, H.
Konferenzbeitrag
2003ENCOTION - A new simulation tool for energetic contamination analysis
Häublein, V.; Frey, L.; Ryssel, H.
Konferenzbeitrag
2003Investigation of lanthanum contamination from a lanthanated tungsten ion source
Häublein, V.; Walser, H.; Frey, L.; Ryssel, H.
Konferenzbeitrag
1999Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Konferenzbeitrag
1999Impact of nitrogen implantation into polysilicon to reduce boron penetration through the gate oxide
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Konferenzbeitrag
1997The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors
Mikolajick, T.; Häublein, V.; Ryssel, H.
Zeitschriftenaufsatz
1995Entwicklung von Prozessen zur Herstellung chemischer Flüssigkeitssensoren mit dem sensitiven Bereich auf der Scheibenrückseite
Häublein, V.
Diplomarbeit