Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2006Nanoscale morphology and photoemission of arsenic implanted germanium films
Petö, G.; Khanh, N.Q.; Horvath, Z.E.; Molnar, G.; Gyulai, J.; Kotai, E.; Guczi, L.; Frey, L.
Zeitschriftenaufsatz
2004Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films
Schmidt, C.; Petrik, P.; Schneider, C.; Fried, M.; Lohner, T.; Barsony, I.; Gyulai, J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2002Characterisation of BaxSr1-xTiO3 films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction
Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zolnai, Z.; Barsony, I.; Lohner, T.; Fried, M.; Gyulai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.
Zeitschriftenaufsatz
2001In-situ measurement of the crystallization of amorphous- silicon in a vertical furnace using spectroscopic ellipsometry
Petrik, P.; Lehnert, W.; Schneider, C.; Lohner, T.; Fried, M.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
2001The influence of target temperature and photon assistance on the radiation sefect formation in low-fluence ion-implanted silicon
Barabanenkov, M.Y.; Gyulai, J.; Leonov, A.V.; Mordkovich, V.N.; Omelyanovskaya, N.M.; Ryssel, H.
Zeitschriftenaufsatz
2000Ellipsometric characterization of oxidized porous silicon layer structures
Lohner, T.; Fried, M.; Petrik, P.; Polgar, O.; Gyulai, J.; Lehnert, W.
Zeitschriftenaufsatz
2000Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
Petrik, P.; Lohner, T.; Fried, M.; Biro, L.P.; Khanh, N.Q.; Gyulai, J.; Lehnert, W.; Schneider, C.; Ryssel, H.
Zeitschriftenaufsatz
2000In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace
Petrik, P.; Lehnert, W.; Schneider, C.; Fried, M.; Lohner, T.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1999AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite
Biro, L.P.; Mark, G.I.; Gyulai, J.; Havancszak, K.; Lipp, S.; Lehrer, C.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
1999Carbon nanotubes produced by high energy (E greater than 100MeV), heavy ion irradiation of graphite
Biro, L.P.; Szabo, B.; Mark, G.I.; Gyulai, J.; Havancsak, K.; Kurti, J.; Dunlop, A.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz, Konferenzbeitrag
1999Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite
Biro, L.P.; Mark, G.I.; Gyulai, J.; Rozlosnik, N.; Kurti, J.; Szabo, B.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
1998Comparative study of polysilicon-on-oxide using spectroscopy ellipsometry, atomic force microscopy and transformation electron microscopy
Petrik, P.; Fried, M.; Lohner, T.; Berger, R.; Biro, L.P.; Schneider, C.; Ryssel, H.; Gyulai, J.
Konferenzbeitrag
1998Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
Petrik, P.; Biro, L.P.; Fried, M.; Lohner, T.; Berger, R.; Schneider, C.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1998Surface disorder production during plasma immersion implantation
Lohner, T.; Khanh, N.Q.; Petrik, P.; Biro, L.P.; Fried, M.; Pinter, I.; Lehnert, W.; Frey, L.; Ryssel, H.; Wentnik, D.J.; Gyulai, J.
Konferenzbeitrag
1997In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions
Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
1997New method based on atomic force microscopy for in-depth characterization of damage in Si irradiated with 209 MeV Kr
Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Bogen, S.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
1994Investigation of the effect of altered defect structure produced by photon assisted the diffusion of As in silicon during thermal anneallagation
Biro, L.P.; Gyulai, J.; Bogen, S.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
1994Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments
Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1993Photon assisted implantation -PAI-
Biro, L.P.; Gyulai, J.; Ryssel, H.; Frey, L.; Kormany, T.; Tuan, N.M.
Zeitschriftenaufsatz
1992High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1992The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J.
Zeitschriftenaufsatz
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Konferenzbeitrag
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Konferenzbeitrag
1992Shallow, titanium-silicided p and n junction formation by triple germanium amorphization
Dehm, C.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1991Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon
Frey, L.; Khanh, N.Q.; Gyulai, J.; Lorenz, E.
Zeitschriftenaufsatz
1991Formation and contact properties of titanium-silicided shallow junctions
Dehm, C.; Gyulai, J.; Ryssel, H.
Konferenzbeitrag
1989Ion-beam mixed MoSi2 layers - formation and contract properties
Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G.
Konferenzbeitrag