Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Stress reduction in high voltage MIS capacitor fabrication
Banzhaf, S.; Kenntner, J.; Grieb, M.; Schwaiger, S.; Erlbacher, T.; Bauer, A.J.; Frey, L.; Frey, L.
Konferenzbeitrag
2015Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides
Banzhaf, C.T.; Grieb, M.; Rambach, M.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2015Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements
Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.; Frey, L.
Konferenzbeitrag
2014Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2014Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2014Investigation of trenched and high temperature annealed 4H-SiC
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2013Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2013Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi
Noll, S.; Scholten, D.; Grieb, M.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
20114H-SiC n-MOSFET logic circuits for high temperature operation
Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2011Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
Le-Huu, M.; Schmitt, H.; Noll, S.; Grieb, M.; Schrey, F.F.; Bauer, A.J.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
2011Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Zeitschriftenaufsatz
2010Charakterisierung von Metall-Oxid-Halbleiter-Strukturen auf der Silicium- und Kohlenstoffseite von 4H-Siliciumcarbid
Grieb, M.
Dissertation
2010Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Konferenzbeitrag
2010Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Konferenzbeitrag
2010NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications
Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2009Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Konferenzbeitrag
2009Influence of the oxidation temperature and atmosphere on the reliability of thick gate oxides on the 4H-SiC C(000-1) face
Grieb, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Ryssel, H.
Konferenzbeitrag