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| 2013 | From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T. | Zeitschriftenaufsatz |
| 2012 | Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L. | Konferenzbeitrag |
| 2011 | Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Roll, G.; Jakschik, S.; Burenkov, A.; Goldbach, M.; Mikolajick, T.; Frey, L. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2011 | Leakage current and defect characterization of p+n-source/drain diodes
Roll, G.; Goldbach, M.; Frey, L. | Zeitschriftenaufsatz |
| 2010 | Carbon junction implant: Effect on leakage currents and defect distribution
Roll, G.; Jakschik, S.; Goldbach, M.; Mikolajick, T.; Frey, L. | Konferenzbeitrag |
| 2008 | Gate edge roughness in electron beam direct write and its influence to device characteristics
Choi, K.-H.; Dittrich, R.; Goldbach, M.; Hohlea, C.; Keil, K.; Marschner, T.; Tesauro, M.; Thrum, F.; Zimmermann, R.; Kretz, J. | Konferenzbeitrag |
| 2008 | Reduction of layout variations with stress-compensated hybrid STI fills: A comprehensive analysis
Städele, M.; Ilicali, G.; Landgraf, E.; Goldbach, M.; Finsterbusch, S.; Lindolf, J.; Radecker, J.; Uhlig, B. | Konferenzbeitrag |