Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T.
Zeitschriftenaufsatz
2012Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L.
Konferenzbeitrag
2011Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Roll, G.; Jakschik, S.; Burenkov, A.; Goldbach, M.; Mikolajick, T.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Leakage current and defect characterization of p+n-source/drain diodes
Roll, G.; Goldbach, M.; Frey, L.
Zeitschriftenaufsatz
2010Carbon junction implant: Effect on leakage currents and defect distribution
Roll, G.; Jakschik, S.; Goldbach, M.; Mikolajick, T.; Frey, L.
Konferenzbeitrag
2008Gate edge roughness in electron beam direct write and its influence to device characteristics
Choi, K.-H.; Dittrich, R.; Goldbach, M.; Hohlea, C.; Keil, K.; Marschner, T.; Tesauro, M.; Thrum, F.; Zimmermann, R.; Kretz, J.
Konferenzbeitrag
2008Reduction of layout variations with stress-compensated hybrid STI fills: A comprehensive analysis
Städele, M.; Ilicali, G.; Landgraf, E.; Goldbach, M.; Finsterbusch, S.; Lindolf, J.; Radecker, J.; Uhlig, B.
Konferenzbeitrag