Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Erfolgreich Fräsen im Werkzeugbau
Boos, Wolfgang; Arntz, Kristian; Johannsen, Lars; Prümmer, Marcel; Horstkotte, Rainer; Ganser, Philipp; Venek, Tommy; Gerretz, Vincent
Studie
2018A practical approach for the optimization of channel integrity in the sealing of shallow microfluidic devices made from cyclic olefin polymer
Ganser, Philipp; Baum, Christoph; Chargin, David; Sauer-Budge, Alexis F.; Sharon, Andre
Zeitschriftenaufsatz
2017Orthogonal cutting of cortical bone: Temperature elevation and fracture toughness
Feldmann, A.; Ganser, P.; Nolte, L.; Zysset, P.
Zeitschriftenaufsatz
2016Technological and simulative analysis of power skiving
Klocke, Fritz; Brecher, Christian; Löpenhaus, Christoph; Ganser, Philipp; Staudt, Julian; Krömer, Markus
Zeitschriftenaufsatz, Konferenzbeitrag
2014Comparison of rotational turning and hard turning regarding surface generation
Degen, Florian; Klocke, Fritz; Bergs, Thomas; Ganser, Philipp
Zeitschriftenaufsatz
2013Presentation of a novel cutting technology for precision machining of hardened, rotationally symmetric parts
Klocke, F.; Bergs, T.; Degen, F.; Ganser, P.
Zeitschriftenaufsatz
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Konferenzbeitrag
2004Optical and acoustic intersubband plasmons
Rösch, M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Zeitschriftenaufsatz
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Konferenzbeitrag
2003Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2002High in content GaInAsN on InP: Composition dependent band gap energy and luminescence properties
Serries, D.; Geppert, T.; Ganser, P.; Köhler, K.; Wagner, J.
Konferenzbeitrag
2002Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Zeitschriftenaufsatz
2001Filling-factor-dependent electron correlations observed in cyclotron resonance
Manger, M.; Batke, E.; Hey, R.; Friedland, K.J.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
2000GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry
Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.
Zeitschriftenaufsatz
1999Cyclotron mass of correlated two-dimensional electron GAS systems in GaAs
Manger, M.; Batke, E.; Köhler, K.; Ganser, P.
Konferenzbeitrag
1999Grating-coupler excited interface phonos in GaAs/AlAs superlattices
Milekhin, A.G.; Rösch, M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1999Infrared and Raman studies of confined and interface optical phonons in short-period GaAs/AlAs superlattices with a grating coupler
Milekhin, A.G.; Rösch, M.; Batke, E.; Zahn, D.R.T.; Köhler, K.; Ganser, P.; Preobrazhenskij, V.; Semyagin, B.
Zeitschriftenaufsatz
1998Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs
Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1998Interaction ruled temperature dependence of the electron cyclotron mass in GaAs heterojunctions
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1998Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
Bronner, W.; Benz, W.; Dammann, M.; Ganser, P.; Grün, N.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Olander, E.
Konferenzbeitrag
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Konferenzbeitrag
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1996Intersubband plasmon-phonon modes of a quasi two-dimensional electron gas in GaAs
Friedrich, T.; Rösch, M.; Latussek, V.; Batke, E.; Köhler, K.; Ganser, P.
Konferenzbeitrag
1996Resonant polaron coupling of high index electron Landau levels in GaAs heterostructures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1995Interaction coupled cyclotron transitions of two-dimensional electron systems in GaAs at high temperatures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1995Spin-split cyclotron resonance and spatial distribution of interacting electrons
Hu, C.M.; Friedrich, T.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1994Bloch oscillations in superlattices
Leisching, P.; Waschke, C.; Bolivar, P.H.; Beck, W.; Roskos, H.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Aufsatz in Buch
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1994Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing.
Leisching, P.; Bolivar, P.H.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
19937.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Hornung, J.; Wang, Z.-G.; Bronner, W.; Olander, E.; Köhler, K.; Ganser, P.; Raynor, B.; Benz, W.; Ludwig, M.
Zeitschriftenaufsatz
1993Comparison of Si delta-doping with homogenous doping in GaAs.
Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
1993Temperature-dependent cyclotron resonances in n-type GaAs
Batke, E.; Bollweg, K.; Merkt, U.; Hu, C.M.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Zeitschriftenaufsatz
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1992Dissipative dynamics of an electronic wavepacket in a semiconductor double well potential.
Schulze, A.; Meier, T.; Thomas, P.; Luo, M.S.C.; Schäfer, W.; Chuang, S.L.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schmitt-Rink, S.; Shah, J.
Zeitschriftenaufsatz
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1992Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1992Temperature-induced spin reversal in n-GaAs.
Batke, E.; Bollweg, K.; Merkt, U.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application
Bachem, K.H.; Hornung, J.; Hülsmann, A.; Ganser, P.; Köhler, K.; Maier, M.
Konferenzbeitrag
1991Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures.
Schweizer, T.; Rothemund, W.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Indirect-to-direct transition of stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Bauser, E.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Zeitschriftenaufsatz
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Konferenzbeitrag
1991Subpicosecond four-wave mixing in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.
Zeitschriftenaufsatz
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1990Femtosecond transient-grating experiments in quantum wells
Schmitt-Rink, S.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Shah, J.
Konferenzbeitrag
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Konferenzbeitrag
1990Quantum beats from extended electronic states in quantum wells
Müller, J.F.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Konferenzbeitrag
1990Subpicosecond transient four-wave-mixing experiments. A novel method to study resonant tunneling.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Zeitschriftenaufsatz
1990Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Zeitschriftenaufsatz
1982Selenium doping of molecular beam epitaxial GaAs using SnSe2.
Smith, R.S.; Ganser, P.M.; Ennen, H.
Zeitschriftenaufsatz
1982Single crystal Fe films grown on GaAs substrates
Ganser, P.M.; Jantz, W.; Smith, R.; Wettling, W.
Zeitschriftenaufsatz