Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
20003D-Analyse von Eigenspannungen in einkristallinen Halbleiterwafern mittels Infrarot-Raster-Polariskopie und hochaufgelöster Röntgenbeugung
Herms, M.; Melov, V.G.; Schreiber, J.; Fukuzawa, M.; Yamada, M.
Konferenzbeitrag
2000Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction
Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Yamada, M.
Konferenzbeitrag
2000Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction and topography
Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Möck, P.; Yamada, M.
Zeitschriftenaufsatz
2000Spatially Resolved Analysis of Residual Strain in Semiconductor Single Crystal Wafers by Scanning Infrared Polariscopy and High Resolution X-Ray Diffraction
Schreiber, J.; Herms, M.; Fukuzawa, M.; Yamada, M.
Konferenzbeitrag
1999Characterization of GaAs(1-x) Bi(x) Epilayers by Raman Scattering and X-ray Diffraction
Herms, M.; Melov, V.G.; Verma, P.; Irmer, G.; Okamoto, H.; Fukuzawa, M.; Oe, K.; Yamada, M.
Konferenzbeitrag
1999Dislocation Bundles in GaAs Substrates: Assessed by X-Ray and Makyoh Topography, X-Ray Diffraction, Scanning Infrared Polariscopy, Light Interferometry and Nomarski Microscopy
Möck, P.; Fukuzawa, M.; Laczik, Z.; Smith, G.W.; Brooker, G.; Yamada, M.; Herms, M.
Konferenzbeitrag
1999Photoelastic Characterization of Residual Strain in GaAs Wafers Annealed in Holders of Different Geometry
Herms, M.; Fukuzawa, M.; Yamada, M.; Klöber, J.; Zychowitz, G.; Niklas, J.
Zeitschriftenaufsatz
1999Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing
Fukuzawa, M.; Herms, M.; Uchida, M.; Oda, O.; Yamada, M.
Zeitschriftenaufsatz