Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
Stockmeier, Ludwig; Kranert, Christian; Fischer, Peter; Epelbaum, Boris; Reimann, Christian; Friedrich, Jochen; Raming, Georg; Miller, Alfred
Zeitschriftenaufsatz
2018Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method
Stockmeier, Ludwig; Kranert, Christian; Raming, Georg; Miller, Alfred; Reimann, Christian; Rudolph, Peter; Friedrich, Jochen
Zeitschriftenaufsatz
2018Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin
Aufsatz in Buch
2018Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Konferenzbeitrag
2018Principle of lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias
Poster
2017Dislocation formation in heavily As-doped Czochralski grown silicon
Stockmeier, Ludwig; Lehmann, Lothar; Miller, Alfred; Reimann, Christian; Friedrich, Jochen
Zeitschriftenaufsatz, Konferenzbeitrag
2017Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Poster
2017Optical stressing of 4H-SiC material and devices
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Poster
2017Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot
Schneider, Veronika; Reimann, Christian; Friedrich, Jochen; Sans, Jürgen; Kuczynski, Maciej
Patent
2017Waste heat energy harvesting by use of BaTiO3 for pyroelectric hydrogen generation
Belitz, R.; Meisner, P.; Coeler, Matthias; Wunderwald, U.; Friedrich, Jochen; Zosel, J.; Schelter, Matthias; Jachalke, Sven; Mehner, Erik
Zeitschriftenaufsatz
2016Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence
Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Konferenzbeitrag
2016Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Konferenzbeitrag
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Vortrag
2015Imaging defect luminescence of 4H-SiC by UV-photoluminescence
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Vortrag
2015Improvement of 4H-SiC material quality
Kallinger, Birgit; Kaminzky, Daniel; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen
Vortrag
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2015Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2015Quality control of SiC materials by optical detection of defects
Kallinger, Birgit; Kaminzky, Daniel; Roßhirt, Katharina; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Vortrag
2014Defektlumineszenz in 4H-SiC
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schütz, Michael
Vortrag
2014HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Konferenzbeitrag
2014New Defect Luminescence Scanner for Inline Control of Material Quality
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen
Poster
2014Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Friedrich, Jochen; Rommel, Mathias
Vortrag
2014Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung in einem Tiegel
Friedrich, Jochen; Reimann, Christian; Wunderwald, Ulrike
Patent
2014Verfahren zur Behandlung und/oder Recycling von Säge-Slurries
Azizi, Maral; Reimann, Christian; Friedrich, Jochen; Blankenburg, Hans-Joachim; Colditz, Rainer
Patent
2014Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nicht-Eisen Metallen sowie Verwendungszwecke
Reimann, Christian; Obermeier, Sebastian; Trempa, Matthias; Schneider, Veronika; Friedrich, Jochen
Patent
2013Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.
Zeitschriftenaufsatz
2013HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2013Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Konferenzbeitrag
2013Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd
Zeitschriftenaufsatz
2013SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Konferenzbeitrag
2012Doping induced lattice misfit in 4H-SiC homoepitaxy
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Müller, Georg; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann; Thomas, Bernd
Zeitschriftenaufsatz
2012Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Poster
2012SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Poster
2011DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS
Freudenberg, Bernhard; Hollatz, Mark; Trempa, Matthias; Reimann, Christian; Friedrich, Jochen
Patent
2011Homoepitaxial growth and defect characterization of 4H-SiC epilayers
Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann
Vortrag