Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan
Zeitschriftenaufsatz
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Konferenzbeitrag
2016Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays
Mueller, S.; Slesazeck, S.; Henker, S.; Flachowsky, S.; Polakowski, P.; Paul, J.; Smith, E.; Müller, J.; Mikolajick, T.
Zeitschriftenaufsatz, Konferenzbeitrag
2016High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Müller, J.; Polakowski, P.; Müller, S.; Mulaosmanovic, H.; Ocker, J.; Mikolajick, T.; Slesazeck, S.; Flachowsky, S.; Trentzsch, T.
Konferenzbeitrag
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Konferenzbeitrag
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Konferenzbeitrag
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Konferenzbeitrag
2015Next-generation ferroelectric memories based on FE-HfO2
Müller, S.; Slesazeck, S.; Mikolajick, T.; Müller, Johannes; Polakowski, Patrick; Flachowsky, S.
Konferenzbeitrag
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Konferenzbeitrag
2010Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Flachowsky, S.; Illgen, R.; Herrmann, T.; Klix, W.; Stenzel, R.; Ostermay, I.; Naumann, A.; Wei, A.; Hontschel, J.; Horstmann, M.
Zeitschriftenaufsatz, Konferenzbeitrag
2010SiGe channels for higher mobility CMOS devices
Naumann, A.; Kelwing, T.; Trentzsch, M.; Kronholz, S.; Kammler, T.; Flachowsky, S.; Herrmann, T.; Kücher, P.; Bartha, J.W.
Konferenzbeitrag
2009Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substrates
Flachowsky, S.; Höntschel, J.; Wei, A.; Illgen, R.; Hermann, P.; Herrmann, T.; Klix, W.; Stenzel, R.; Ramirez, A.; Horstmann, M.; Kernevez, N.; Cayrefourcq, I.; Metral, F.; Kennard, M.; Guiot, E.
Konferenzbeitrag