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| 2003 | Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2003 | Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W. | Zeitschriftenaufsatz |
| 2002 | 65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Leich, M.; Hurm, V.; Sohn, J.; Feltgen, T.; Bronner, W.; Köhler, K.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M. | Zeitschriftenaufsatz |
| 2002 | A 94 GHz single-chip FMCW radar module for commercial sensor applications
Tessmann, A.; Kudszus, S.; Feltgen, T.; Riessle, M.; Sklarczyk, C.; Haydl, W. | Konferenzbeitrag |
| 2002 | Compact single-chip W-band FMCW radar modules for commercial high-resolution sensor applications
Tessmann, A.; Kudszus, S.; Feltgen, T.; Riessle, M.; Sklarczyk, C.; Haydl, W.H. | Zeitschriftenaufsatz |
| 2002 | High-field step-stress and long term stability of PHEMTs with different gate and recess lengths
Cova, P.; Menozzi, R.; Dammann, M.; Feltgen, T.; Jantz, W. | Zeitschriftenaufsatz |
| 2001 | Gasphasenzüchtung massiver Einkristalle im System Cadmium-Zink-Tellur
Feltgen, T. | Dissertation |