Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
Cristiano, F.; Essa, Z.; Qiu, Y.; Spiegel, Y.; Torregrosa, F.; Duchaine, J.; Boulenc, P.; Tavernier, C.; Cojocaru, O.; Blavette, D.; Mangelinck, D.; Fazzini, P.F.; Quillec, M.; Bazizi, M.; Hackenberg, M.; Boninelli, S.
Konferenzbeitrag
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2007Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.
Konferenzbeitrag
2007Experimental and theoretical results of dopant activation by a combination of spike and flash annealing
Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.
Konferenzbeitrag