Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2021Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing
Fan, Y.; Song, Y.; Xu, Z.; Dong, B.; Wu, J.; Rommel, Mathias; Zhang, K.; Zhao, J.; Zhu, R.; Li, B.; Li, Q.; Fang, F.
Zeitschriftenaufsatz
2020Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
Liu, J.; Xu, Z.; Song, Y.; Wang, H.; Dong, B.; Li, S.; Ren, J.; Li, Q.; Rommel, M.; Gu, X.; Liu, B.; Hu, M.; Fang, F.
Zeitschriftenaufsatz
2020Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
Wang, X.; Zhao, J.; Xu, Z.; Djurabekova, F.; Rommel, M.; Song, Y.; Fang, F.
Zeitschriftenaufsatz
2020Depth Profiling of Ion-Implanted 4H-SiC Using Confocal Raman Spectroscopy
Song, Ying; Xu, Zongwei; Liu, Tao; Rommel, Mathias; Wang, Hong; Wang, Yufang; Fang, Fengzhou
Zeitschriftenaufsatz
2020Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
Xu, Zongwei; Liu, Lei; He, Zhongdu; Tian, Dongyu; Hartmaier, Alexander; Zhang, Junjie; Luo, Xichun; Rommel, Mathias; Nordlund, Kai; Zhang, Guoxiong; Fang, Fengzhou
Zeitschriftenaufsatz
2020Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC
Song, Ying; Xu, Zongwei; Li, Rongrong; Wang, Hong; Fan, Yexin; Rommel, Mathias; Liu, Jiayu; Astakhov, Georgy V.; Hlawacek, Gregor; Li, Bingsheng; Xu, Jun; Fang, Fengzhou
Zeitschriftenaufsatz
2020Tool wear prevention in ultra-precision polymer machining
Uhlmann, E.; Fang, F.; Polte, J.; Hein, C.; Lai, M.; Dörr, M.; Jahnke, C.
Konferenzbeitrag
2019Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopy
Song, Ying; Xu, Zongwei; Liu, Tao; Rommel, Mathias; Wang, Hong; Fang, Fengzhou
Poster
2019Electron paramagnetic resonance characterization of aluminum ion implantation induced defects in 4H-SiC
Wang, Xiuhong; Xu, Zongwei; Rommel, Mathias; Dong, Bing; Song, Le; Tee, Clarence Augustine T.H.; Fang, Fengzhou
Zeitschriftenaufsatz
2019Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect
Liu, Tao; Xu, Zongwei; Rommel, Mathias; Wang, Hong; Song, Ying; Wang, Yufang; Fang, Fengzhou
Zeitschriftenaufsatz
2019Raman Spectroscopy Characterization of Ion Implanted 4H-SiC and its Annealing Effects
Xu, Zongwei; Song, Ying; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, Fengzhou
Konferenzbeitrag
2019Surface-enhanced Raman scattering on nanodiamond-derived carbon onions
Song, Ying; Xu, Zongwei; Rosenkranz, Andreas; Rommel, Mathias; Shi, Changkun; Fang, Fengzhou
Zeitschriftenaufsatz
2018Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC
He, Zhongdu; Xu, Zongwei; Rommel, Mathias; Yao, Boteng; Liu, Tao; Song, Ying; Fang, Fengzhou
Zeitschriftenaufsatz
2018Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects
Xu, Zongwei; Song, Y.; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, F.Z.
Poster
2018Topic review: Application of raman spectroscopy characterization in micro/nano-machining
Xu, Zongwei; He, Zhongdu; Song, Ying; Fu, Xiu; Rommel, Mathias; Luo, Xichun; Hartmaier, Alexander; Zhang, Junjie; Fang, Fengzhou
Zeitschriftenaufsatz