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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter
Zeitschriftenaufsatz
2003Quantitative correlation of the metastable defect in Cz-silicon with different impurities
Rein, S.; Diez, S.; Falster, R.; Glunz, S.W.
Konferenzbeitrag
2000On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
Falster, R.; Voronkov, V.V.; Quast, F.
Zeitschriftenaufsatz
2000Vacancy-Nitrogen Complexes in Float-Zone Silicon
Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.
Konferenzbeitrag
1998Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Aufsatz in Buch
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Zeitschriftenaufsatz
1997Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Zeitschriftenaufsatz
1997Vacancy-assisted oxygen precipitation phenomena in Si
Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.
Zeitschriftenaufsatz
1995Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Konferenzbeitrag
1995Platinum diffusion at low temperatures
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Konferenzbeitrag