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| 2017 | Laser module based on monolithically integrated Mopas at 1.5 μm for space-borne lidar applications
Faugeron, M.; Klein, S.; Villera, M.; Kochem, G.; Péez-Serrano, A.; Krakowski, M.; Traub, M.; Dijk, F. van; Esquivias, I. | Konferenzbeitrag |
| 2015 | Atmospheric CO2 remote sensing system based on high brightness semiconductor lasers and single photon counting detection
Perez-Serrano, A.; Vilera, M.; Esquivias, I.; Faugeron, M.; Krakowski, M.; Dijk, F. van; Kochem, G.; Traub, M.; Adamiec, P.; Barbero, J.; Ai, X.; Rarity, J.G.; Quatrevalet, M.; Ehret, G. | Konferenzbeitrag |
| 2015 | High power three-section integrated master oscillator power amplifier at 1.5 μm
Faugeron, M.; Vilera, M.; Krakowski, M.; Robert, Y.; Vinet, E.; Primiani, P.; Le Goëc, J.-P.; Parillaud, O.; Pérez-Serrano, A.; Tijero, J.M.G.; Kochem, G.; Traub, M.; Esquivias, I.; Dijk, F. van | Zeitschriftenaufsatz |
| 2014 | High-brightness all semiconductor laser at 1.57 µm for space-borne lidar measurements of atmospheric carbon dioxide: Device design and analysis of requirements
Esquivias, I.; Consoli, A.; Krakowski, M.; Faugeron, M.; Kochem, G.; Traub, M.; Barbero, J.; Fiadino, P.; Ai, X.; Rarity, J.; Quatrevalet, M.; Ehret, G. | Konferenzbeitrag |
| 2014 | Random-modulation CW LIDAR system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser
Esquivias, I.; Pérez-Serrano, A.; Tijero, J.M.G.; Faugeron, M.; Dijk, F. van; Krakowski, M.; Kochem, G.; Traub, M.; Barbero, J.; Adamiec, P.; Ai, X.; Rarity, J.; Quatrevalet, M.; Ehret, G. | Konferenzbeitrag |
| 2008 | High-brightness quantum well and quantum dot tapered lasers
Michel, N.; Krakowski, M.; Hassiaoui, I.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Weinmann, P.; Zimmermann, C.; Kaiser, W.; Kamp, M.; Forchel, A.; Pavelescu, E.-M.; Reithmaier, J.-P.; Sumpf, B.; Erbert, G.; Kelemen, M.; Ostendorf, R.; García-Tijero, J.-M.; Odriozola, H.; Esquivias, I. | Konferenzbeitrag |
| 2000 | Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Arias, J.; Esquivias, I.; Larkins, E.C.; Burkner, S.; Weisser, S.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1999 | Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1999 | Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1997 | Carrier escape time in quantum well lasers: dependence on injection level, doping concentration, and temperature
Romero, B.; Esquivias, I.; Arias, J.; Batko, G.; Weisser, S.; Rosenzweig, J. | Konferenzbeitrag |
| 1997 | Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J. | Konferenzbeitrag |
| 1997 | Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Torre, M.S.; Esquivias, I.; Romero, B.; Czotscher, K.; Weisser, S.; Ralston, J.D.; Larkins, E.; Benz, W.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1996 | Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1996 | Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1996 | Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M. | Zeitschriftenaufsatz |
| 1996 | Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1996 | Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I. | Zeitschriftenaufsatz |
| 1996 | Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Konferenzbeitrag |
| 1995 | CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Aufsatz in Buch |
| 1995 | Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Zeitschriftenaufsatz |
| 1994 | Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J. | Konferenzbeitrag |
| 1994 | DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J. | Konferenzbeitrag |
| 1994 | Impedance characteristics of quantum-wells lasers
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Romero, B.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1994 | Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1994 | Theoretical investigation of gain enhancements in strained In0.35Ga0.65As/Gas MQW lasers via p-doping.
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1993 | 30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1993 | Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Zeitschriftenaufsatz |
| 1993 | Electrical properties of the anodic oxide-HgZnTe interface
Esquivias, I.; Baars, J.; Brink, D.; Eger, D. | Zeitschriftenaufsatz |
| 1993 | Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J. | Zeitschriftenaufsatz |
| 1993 | Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Konferenzbeitrag |
| 1993 | Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Konferenzbeitrag |
| 1993 | P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J. | Zeitschriftenaufsatz |
| 1993 | Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J. | Konferenzbeitrag |
| 1992 | 16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P. | Konferenzbeitrag |
| 1992 | Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J. | Konferenzbeitrag |
| 1992 | Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J. | Konferenzbeitrag |
| 1992 | Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1992 | High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1992 | Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J. | Konferenzbeitrag |
| 1992 | Modelling and characterization of high-speed GaAs and In0.35Ga0.65As multiple-quantum-well laser diodes
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Gallagher, D.F.G. | Konferenzbeitrag |
| 1992 | Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1992 | Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J. | Konferenzbeitrag |
| 1991 | Characterization of anodic fluoride films on Hg1-xCdxTe
Esquivias, I.; Dal Colle, M.; Brink, D.; Baars, J.; Bruder, M. | Konferenzbeitrag |
| 1991 | Properties of anodic fluoride films on Hg1-xCdxTe
Esquivias, I.; Brink, D.; Dal Colle, M.; Baars, J.; Bruder, M. | Konferenzbeitrag |
| 1991 | Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G. | Zeitschriftenaufsatz |