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| 2021 | Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects
Erlekampf, Jürgen; Rommel, Mathias; Rosshirt-Lilla, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias | Zeitschriftenaufsatz |
| 2021 | A Monolithically Integrated SiC Circuit Breaker
Böttcher, Norman; Erlbacher, Tobias | Zeitschriftenaufsatz |
| 2021 | Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors
Becker, Tom; Matlok, Stefan; Heckel, Thomas; Böttcher, Norman; Leib, Jürgen; Erlbacher, Tobias | Vortrag |
| 2021 | SiC for Power Electronics and More - 150mm and 200mm Technologies on the Move
Erlbacher, Tobias | Vortrag |
| 2020 | A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A. | Zeitschriftenaufsatz |
| 2020 | Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology
Erlbacher, T. | Vortrag |
| 2020 | Design and fabrication of 4h-Sic Mosfets with optimized JFET and p-body design
Ni, W.; Wang, X.; Feng, C.; Xiao, H.; Jiang, L.; Li, W.; Wang, Q.; Li, M.; Schlichting, H.; Erlbacher, T. | Konferenzbeitrag |
| 2020 | Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker
Böttcher, Norman; Erlbacher, Tobias | Konferenzbeitrag |
| 2020 | Elektrisches Kabel oder elektrische Litze sowie drahtförmiges elektrisches Verbindungselement mit halbleitendem Funktionsabschnitt
Bayer, Christoph; Schletz, Andreas; Erlbacher, Tobias | Patent |
| 2020 | Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
Albrecht, M.; Perez, D.; Martens, R.C.; Bauer, A.J.; Erlbacher, T. | Konferenzbeitrag |
| 2020 | The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
Besendörfer, S.; Meissner, E.; Medjoub, F.; Derluyn, J.; Friedrich, J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2020 | Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET
Liu, S.; Cheng, X.; Zheng, L.; Sledziewski, T.; Erlbacher, T.; Sheng, L.; Yu, Y. | Zeitschriftenaufsatz |
| 2020 | Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Schlichting, Holger; Kocher, Matthias; Weiße, Julietta; Erlbacher, Tobias; Bauer, Anton J. | Konferenzbeitrag |
| 2020 | Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias | Konferenzbeitrag |
| 2020 | Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V
Saponara, S.; Ciarpi, G.; Erlbacher, Tobias; Rattmann, Gudrun | Zeitschriftenaufsatz |
| 2020 | Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
Besendörfer, S.; Meissner, E.; Zweipfennig, T.; Yacoub, H.; Fahle, D.; Behmenburg, H.; Kalisch, H.; Vescan, A.; Friedrich, J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2020 | An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETs
Albrecht, M.; Klüpfel, F.J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2020 | Leistungsmodul mit unipolarem Halbleiterbauelement für hohe Lebensdauer
Erlbacher, Tobias; Schletz, Andreas | Patent |
| 2020 | Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
Hellinger, Carsten; Rusch, Oleg; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias | Konferenzbeitrag |
| 2020 | Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
Lim, Minwho; Sledziewski, Tomasz; Rommel, Mathias; Erlbacher, Tobias; Kim, Hong-Ki; Kim, Seongjun; Shin, Hoon-Kyu; Bauer, Anton J. | Konferenzbeitrag |
| 2020 | RC-Snubberglied mit hoher Spannungsfestigkeit
Erlbacher, Tobias; Schletz, Andreas; Rattmann, Gudrun | Patent |
| 2020 | Real embedding process of SiC devices in a monolithic ceramic package using LTCC technology
Lenz, Christian; Ziesche, Steffen; Schletz, Andreas; Bach, Hoang Linh; Erlbacher, Thomas | Konferenzbeitrag |
| 2020 | Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
Rusch, Oleg; Hellinger, Carsten; Moult, Jonathan; Corcoran, Yunji; Erlbacher, Tobias | Konferenzbeitrag |
| 2020 | RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC
Weiße, J.; Matthus, C.; Schlichting, H.; Mitlehner, H.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2020 | SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study
Sledziewski, T.; Erlbacher, T. | Konferenzbeitrag |
| 2020 | Verfahren zur Herstellung von Halbleiterkondensatoren unterschiedlicher Kapazitätswerte in einem Halbleitersubstrat
Erlbacher, Tobias | Patent |
| 2020 | Vertical breakdown of GaN on Si due to V-pits
Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | 1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
Ni, W.; Wang, X.; Xiao, H.; Xu, M.; Li, M.; Schlichting, H.; Erlbacher, T. | Konferenzbeitrag |
| 2019 | 3D-Integrated Multi-Sensor Demonstrator System for Environmental Monitoring
Köck, A.; Wimmer-Teubenbacher, R.; Sosada-Ludwikovska, F.; Rohracher, K.; Wachmann, E.; Herold, M.; Welden, T. an; Kim, J.M.; Ali, Z.; Poenninger, A.; Stahl-Offergeld, M.; Hohe, H.-P.; Lorenz, J.; Erlbacher, T.; Dolmans, G.; Offermans, P.; Vandecasteele, M.; Yurchenko, O.; Sicard, O. von; Pohle, R.; Udrea, F.; Falco, C.; Flandre, D.; Bol, D.; Comini, E.; Zappa, D.; Gardner, J.; Cole, M.; Theunis, J.; Peters, J.; Baldwin, A. | Konferenzbeitrag |
| 2019 | Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
Weiße, J.; Hauck, M.; Krieger, M.; Bauer, A.J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias | Konferenzbeitrag |
| 2019 | Characterization of a silicon carbide BCD process for 300°C circuits
Abbasi, A.; Roy, S.; Murphree, R.; Rashid, A.-U.; Hossain, M.M.; Lai, P.; Fraley, J.; Erlbacher, T.; Chen, Z.; Mantooth, A. | Konferenzbeitrag |
| 2019 | Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping | Konferenzbeitrag |
| 2019 | Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J. | Konferenzbeitrag |
| 2019 | Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, J.; Kallinger, B.; Weiße, J.; Rommel, M.; Berwian, P.; Friedrich, J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure
Ni, W.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q.; Schlichting, H.; Erlbacher, T. | Konferenzbeitrag |
| 2019 | Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T. | Konferenzbeitrag |
| 2019 | Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
Weisse, Julietta; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias | Konferenzbeitrag |
| 2019 | Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zong Wei; Erlbacher, Tobias; Bauer, Anton J. | Konferenzbeitrag |
| 2019 | Elektrische Schaltungsanordnung mit einer aktiven Entladeschaltung
Erlbacher, Tobias; Matlok, Stefan | Patent |
| 2019 | Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A. | Konferenzbeitrag |
| 2019 | Hochvolt-Kondensator zur Integration in elektrische Leistungsmodule sowie Verfahren zur Herstellung
Erlbacher, Tobias | Patent |
| 2019 | Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2019 | Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Schlichting, Holger; Kocher, Matthias; Weiße, Julietta; Erlbacher, Tobias; Bauer, Anton J. | Poster |
| 2019 | Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias | Poster |
| 2019 | Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
Rusch, Oleg; Moult, Jonathan; Erlbacher, Tobias | Konferenzbeitrag |
| 2019 | Lifetime engineering in 4H-SiC materials and devices
Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias | Vortrag |
| 2019 | Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
Hellinger, Carsten; Rusch, Oleg; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias | Poster |
| 2019 | Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, A.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | Monolithisch integrierter Halbleiterschalter, insbesondere Leistungstrennschalter
Erlbacher, Tobias; Hürner, Andreas | Patent |
| 2019 | Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Kim, Seongjun; Kim, Hong-Ki; Lim, Minwho; Jeong, Seonghoon; Kang, Min-Jae; Kang, Min-Sik; Lee, Nam-Suk; Coung, Tran Viet; Kim, Hyunsoo; Erlbacher, Tobias; Bauer, Anton J.; Shin, Hoon-Kyu | Zeitschriftenaufsatz |
| 2019 | On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias | Zeitschriftenaufsatz |
| 2019 | On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta; Hauck, Martin; Sledziewski, Tomasz; Krieger, Michael; Bauer, Anton J.; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias | Konferenzbeitrag |
| 2019 | Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L. | Konferenzbeitrag |
| 2019 | Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC
Lim, Minwho; Sledziewski, Tomasz; Rommel, Mathias; Erlbacher, Tobias; Kim, Hong-Ki; Kim, Seongjun; Shin, Hoon-Kyu; Bauer, Anton | Poster |
| 2019 | Process and design optimization of SiC MOSFET for low on-state resistance
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton | Vortrag |
| 2019 | Publisher’s Note: "Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC" [AIP Advances 9, 055308 (2019)]
Weiße, J.; Hauck, M.; Krieger, M.; Bauer, A.J.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2019 | Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
Rusch, O.; Hellinger, C.; Moult, J.; Corcoran, Y.; Erlbacher, T. | Poster |
| 2019 | SIC device manufacturing using ion implantation. Opportunities and challenges
Erlbacher, Tobias | Vortrag |
| 2019 | SiC MOSFET with a self-aligned channel defined by shallow source-JFET implantation: A simulation study
Sledziewski, Tomasz; Erlbacher, Tobias | Poster |
| 2019 | Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride
Boettcher, N.; Heckel, T.; Erlbacher, T.; Pelaic, K. | Konferenzbeitrag |
| 2019 | Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
Kim, Hong-Ki; Kim, Seongjun; Buettner, Jonas; Lim, Minwho; Erlbacher, Tobias; Bauer, Anton J.; Koo, Sang-Mo; Lee, Nam-Suk; Shin, Hoon-Kyu | Konferenzbeitrag |
| 2019 | A TCAD Process Model with Monte Carlo Ion Implantation for 4H-SiC JBS Diode Analysis and Design
Büttner, J.; Beuer, S.; Petersen, S.; Rommel, M.; Erlbacher, T.; Bauer, A. | Poster |
| 2019 | Technological advances towards 4H-SiC JBS diodes for wind power applications
Buettner, Jonas; Erlbacher, Tobias; Bauer, Anton | Konferenzbeitrag |
| 2019 | Technologische Justierung der spektralen Empfindlichkeit von 4H-SiC-UV-Sensoren
Matthus, Christian David
: Lerch, Reinhard; Erlbacher, Tobias; Schmauß, Bernhard | Dissertation |
| 2019 | TSV-based passive networks for monolithic integration in smartpower ICS for automotive applications
Erlbacher, Tobias; Rattmann, Gudrun | Vortrag |
| 2019 | UV-Strahlungssensor auf Basis von Diamant
Erlbacher, Tobias | Patent |
| 2019 | Wavelength-selective 4H-SiC UV-sensor array
Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2018 | Analysis of compensation effects in aluminum-implanted 4H-SiC devices
Weisse, J.; Hauck, M.; Sledziewski, T.; Tschiesche, M.; Krieger, M.; Bauer, A.; Mitlehner, H.; Frey, L.; Erlbacher, T. | Konferenzbeitrag |
| 2018 | Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2018 | Comparative Study of 4H-SiC UV-Sensors with Ion Implanted and Epitaxially Grown p-Emitter
Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2018 | Decoration of Al implantation profiles in 4H-SiC by bevel grinding and dry oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton | Poster |
| 2018 | Determination of compensation ratios of Al-implanted 4H-SiC by TCAD modelling of TLM measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zongwei; Erlbacher, Tobias; Bauer, Anton | Poster |
| 2018 | Electrical properties of schottky-diodes based on B doped diamond
Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2018 | Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin | Aufsatz in Buch |
| 2018 | Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L. | Zeitschriftenaufsatz |
| 2018 | Future technology trends
Lorenz, Leo; Erlbacher, Tobias; Hilt, Oliver | Aufsatz in Buch |
| 2018 | The GaN trench gate MOSFET with floating islands
Shen, L.; Müller, S.; Cheng, X.; Zhang, D.; Zheng, L.; Xu, D.; Yu, Y.; Meissner, E.; Erlbacher, T. | Zeitschriftenaufsatz |
| 2018 | Heterogeneous integration of vertical GaN power transistor on Si capacitor for DC-DC converters
Yu, Zechun; Zeltner, Stefan; Boettcher, Norman; Rattmann, Gudrun; Leib, Jürgen; Bayer, Christoph Friedrich; Schletz, Andreas; Erlbacher, Tobias; Frey, Lothar | Vortrag |
| 2018 | Impact of Al-ion implantation on the formation of deep defects in n-type 4H-SiC
Weiße, Julietta; Hauck, Martin; Krieger, Michael; Erlekampf, Jürgen; Mitlehner, Heinz; Bauer, Anton J.; Rommel, Mathias; Häublein, Volker; Erlbacher, Tobias; Csato, Constantin; Rüb, Michael; Akhmadaliev, Shavkat; Frey, Lothar | Konferenzbeitrag |
| 2018 | Influence of Al doping concentration and annealing parameters on TiAl based Ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton J. | Konferenzbeitrag |
| 2018 | Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J. | Konferenzbeitrag |
| 2018 | Lifetime testing method for ceramic capacitors for power electronics applications
Dresel, Fabian; Tham, Nils; Erlbacher, Tobias; Schletz, Andreas | Konferenzbeitrag |
| 2018 | Principle of lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias | Poster |
| 2018 | Schottky diode and method for its manufacturing
Erlbacher, Tobias; Hürner, Andreas | Patent |
| 2018 | Strahlungssensor zur Detektion schwacher Strahlungssignale
Erlbacher, Tobias; Matthus, Christian | Patent |
| 2017 | 4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton | Konferenzbeitrag |
| 2017 | Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C
Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2017 | Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2017 | Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Matthus, C.D.; Erlbacher, T.; Schöfer, B.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2017 | Influence of Al doping concentration and annealing parameters on TiAl based ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton | Poster |
| 2017 | Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J. | Poster |
| 2017 | Monolithically integrated solid-state-circuit-breaker for high power applications
Huerner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2017 | Novel advanced analytical design tool for 4H-SiC VDMOSFET devices
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A. | Konferenzbeitrag |
| 2017 | Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T. | Konferenzbeitrag |
| 2017 | Stress reduction in high voltage MIS capacitor fabrication
Banzhaf, S.; Kenntner, J.; Grieb, M.; Schwaiger, S.; Erlbacher, T.; Bauer, A.J.; Frey, L.; Frey, L. | Konferenzbeitrag |
| 2017 | Switching SiC devices faster and more efficient using a DBC mounted terminal decoupling Si-RC element
Matlok, S.; Erlbacher, T.; Krach, F.; Eckardt, B. | Konferenzbeitrag |
| 2016 | 4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton | Poster |
| 2016 | Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
Di Benedetto, L.; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Bellone, S. | Zeitschriftenaufsatz |
| 2016 | ATHENIS-3D: Automotive tested high-voltage and embedded non-volatile integrated SoC platform with 3D technology
Wachmann, Ewald; Saponara, Sergio; Zambelli, C.; Tisserand, Pierre; Charbonnier, Jean; Erlbacher, Tobias; Grünler, Saeideh; Hartler, C.; Siegert, J.; Chassard, P.; Ton, D.M.; Ferrari, L.; Fanucci, L. | Konferenzbeitrag |
| 2016 | Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
Hürner, Andreas; Mitlehner, Heinz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar | Konferenzbeitrag |
| 2016 | Innovative monolithic RC-snubber for fast switching power modules
Krach, F.; Heckel, T.; Frey, L.; Bauer, A.J.; Erlbacher, T.; März, M. | Konferenzbeitrag |
| 2016 | Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar | Konferenzbeitrag |
| 2016 | A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Liguori, R.; Rubino, Alfredo | Zeitschriftenaufsatz |
| 2016 | Monolithic 3D TSV-based high-voltage, high-temperature capacitors
Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2016 | Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias | Zeitschriftenaufsatz |
| 2016 | Optimized design for 4H-SiC power DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo | Zeitschriftenaufsatz |
| 2016 | Post-trench processing of silicon deep trench capacitors for power electronic applications
Banzhaf, Stefanie; Schwaiger, Stefan; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar | Konferenzbeitrag |
| 2016 | Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar | Konferenzbeitrag |
| 2016 | Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability
Krach, Florian; Thielen, Nils; Heckel, Thomas; Bauer, Anton J.; Erlbacher, Tobias; Frey, Lothar | Konferenzbeitrag |
| 2016 | Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter | Konferenzbeitrag |
| 2016 | Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV
Grünler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Krach, F.; Frey, L. | Konferenzbeitrag |
| 2016 | A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes
Huang, Yaren; Erlbacher, Tobias; Buettner, Jonas; Wachutka, Gerhard | Konferenzbeitrag |
| 2015 | High-voltage monolithic 3D capacitors based on through-silicon-via technology
Grünler, Saeideh; Rattmann, Gudrun; Erlbacher, Tobias; Bauer, Anton; Frey, Lothar | Poster |
| 2015 | Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
Erlbacher, T.; Schwarzmann, H.; Bauer, A.J.; Döhler, G.H.; Schreivogel, M.; Lutz, T.; Guillén, F.H.; Graf, J.; Fix, R.; Frey, L. | Zeitschriftenaufsatz |
| 2015 | Modeling of the electrochemical etch stop with high reverse bias across pn-junctions
Szwarc, Robert; Frey, Lothar; Weber, Hans; Moder, Iris; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J. | Vortrag |
| 2015 | Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
Szwarc, R.; Frey, L.; Weber, H.; Moder, I.; Erlbacher, T.; Rommel, M.; Bauer, A.J. | Konferenzbeitrag |
| 2015 | Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2015 | Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications
Krach, F.; Schwarzmann, H.; Bauer, A.J.; Erlbacher, T.; Frey, L. | Zeitschriftenaufsatz |
| 2015 | Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability
Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2015 | Vorrichtung und Verfahren zur Überbrückung eines elektrischen Energiespeichers
Erlbacher, Tobias; Lorentz, Vincent; Waller, Reinhold; Rattmann, Gudrun | Patent |
| 2014 | Experimental analysis of bipolar SiC-devices for future energy distribution systems
Huerner, A.; Mitlehner, H.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2014 | Lateral Power Transistors in Integrated Circuits
Erlbacher, T. | Buch |
| 2014 | Reliability of monolithic RC-snubbers in MOS-based power modules
Erlbacher, T.; Schwarzmann, H.; Krach, F.; Bauer, A.J.; Berberich, S.E.; Kasko, I.; Frey, L. | Konferenzbeitrag |
| 2014 | Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
| 2014 | Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2013 | Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
Iglesias, V.; Martin-Martinez, J.; Porti, M.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Bersuker, G. | Zeitschriftenaufsatz |
| 2013 | Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
| 2012 | Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
Schwarzmann, Holger; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar | Konferenzbeitrag |
| 2012 | Comparative investigation on installation space requirements for input filters of DC-link- and matrix converters based on amplitude pseudo-spectra
Schramm, A.; Lanfer, H.; Petzoldt, J.; Rädel, U.; Schwarzmann, H.; Erlbacher, T. | Konferenzbeitrag |
| 2012 | Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F. | Konferenzbeitrag |
| 2012 | Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
Iglesias, V.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Porti, M.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Bersuker, G. | Poster |
| 2012 | Eletrisches Überbrückungselement, insbesondere für Speicherzellen eines Energiespeichers
Dorp, Joachim vom; Erlbacher, Tobias; Frey, L. | Patent |
| 2012 | Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, T.; Huerner, A.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2012 | Feasiblity and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, Tobias; Hürner A.; Bauer, Anton J.; Frey, Lothar | Zeitschriftenaufsatz |
| 2012 | A generic approach for comparing input filter efforts of voltage- and current source converters
Schramm, A.; Lanfer, H.; Petzoldt, J.; Rädel, U.; Schwarzmann, H.; Erlbacher, T. | Konferenzbeitrag |
| 2012 | Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Berberich, Sven E.; Dorp, Joachim vom; Frey, Lothar | Konferenzbeitrag |
| 2012 | Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar | Zeitschriftenaufsatz |
| 2012 | Reliability characterization of dielectrics in 200V trench capacitors
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Dorp, Joachim vom; Frey, Lothar | Poster |
| 2012 | Resistive circuit, circuit layout and driver
Berberich, Sven E.; Wintrich, Arendt; Erlbacher, Tobias | Patent |
| 2012 | Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar | Zeitschriftenaufsatz |
| 2011 | Dielectric layers suitable for high voltage integrated trench capacitors
Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L. | Zeitschriftenaufsatz |
| 2011 | Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS
Erlbacher, T.; Yanev, V.; Rommel, M.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2011 | A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
Murakami, M.; Rommel, M.; Yanev, V.; Erlbacher, T.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2011 | Monolithic RC-snubber for power electronic applications
Dorp, Joachim vom; Berberich, Sven E.; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar | Konferenzbeitrag |
| 2010 | Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers
Rommel, M.; Yanev, V.; Paskaleva, A.; Erlbacher, T.; Lemberger, M.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2010 | Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area
Aygun, G.; Roeder, G.; Erlbacher, T.; Wolf, M.; Schellenberger, M.; Pfitzner, L. | Zeitschriftenaufsatz |
| 2010 | Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil
Dorp, J. vom; Erlbacher, T.; Lorentz, V.; Bauer, A.J.; Ryssel, H.; Frey, L. | Konferenzbeitrag |
| 2010 | Reduced on resistance in LDMOS devices by integrating trench gates into planar technology
Erlbacher, T.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2010 | Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L. | Poster |
| 2010 | Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L. | Konferenzbeitrag |
| 2009 | Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L. | Zeitschriftenaufsatz |
| 2009 | Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L. | Poster |
| 2009 | Search for future high-k dielectrics, boundary conditions and examples
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W. | Konferenzbeitrag |
| 2009 | Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers
Erlbacher, T.; Graf, T.; DasGupta, N.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |
| 2008 | HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories
Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H. | Zeitschriftenaufsatz |
| 2008 | High-k: Latest developments and perspectives
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W. | Aufsatz in Buch |
| 2008 | Schichten hoher Dielektrizitätskonstante für den Einsatz in ladungsbasierten nichtflüchtigen Speicherzellen
Erlbacher, T. | Dissertation |
| 2008 | Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C. | Zeitschriftenaufsatz |
| 2008 | Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U. | Zeitschriftenaufsatz |
| 2007 | Hafnium silicate as control oxide in non-volatile memories
Erlbacher, T.; Bauer, A.J.; Ryssel, H. | Konferenzbeitrag |