Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
Weiße, J.; Hauck, M.; Krieger, M.; Bauer, A.J.; Erlbacher, T.
Zeitschriftenaufsatz
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Konferenzbeitrag
2019Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping
Konferenzbeitrag
2019Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Konferenzbeitrag
2019Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, J.; Kallinger, B.; Weiße, J.; Rommel, M.; Berwian, P.; Friedrich, J.; Erlbacher, T.
Zeitschriftenaufsatz
2019Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T.
Konferenzbeitrag
2019Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
Weisse, Julietta; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Konferenzbeitrag
2019Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zong Wei; Erlbacher, Tobias; Bauer, Anton J.
Konferenzbeitrag
2019Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.
Zeitschriftenaufsatz
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Konferenzbeitrag
2019Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2019Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
Rusch, Oleg; Moult, Jonathan; Erlbacher, Tobias
Konferenzbeitrag
2019Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V
Saponara, S.; Ciarpi, G.; Erlbacher, Tobias; Rattmann, Gudrun
Zeitschriftenaufsatz
2019Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, A.; Erlbacher, T.
Zeitschriftenaufsatz
2019On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias
Zeitschriftenaufsatz
2019On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta; Hauck, Martin; Sledziewski, Tomasz; Krieger, Michael; Bauer, Anton J.; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Konferenzbeitrag
2019Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L.
Konferenzbeitrag
2019Process and design optimization of SiC MOSFET for low on-state resistance
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton
Vortrag
2019SIC device manufacturing using ion implantation. Opportunities and challenges
Erlbacher, Tobias
Vortrag
2019Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
Kim, Hong-Ki; Kim, Seongjun; Buettner, Jonas; Lim, Minwho; Erlbacher, Tobias; Bauer, Anton J.; Koo, Sang-Mo; Lee, Nam-Suk; Shin, Hoon-Kyu
Konferenzbeitrag
2019Technological advances towards 4H-SiC JBS diodes for wind power applications
Buettner, Jonas; Erlbacher, Tobias; Bauer, Anton
Konferenzbeitrag
2019Technologische Justierung der spektralen Empfindlichkeit von 4H-SiC-UV-Sensoren
Matthus, Christian David
: Lerch, Reinhard; Erlbacher, Tobias; Schmauß, Bernhard
Dissertation
2019TSV-based passive networks for monolithic integration in smartpower ICS for automotive applications
Erlbacher, Tobias; Rattmann, Gudrun
Vortrag
2019Wavelength-selective 4H-SiC UV-sensor array
Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T.
Zeitschriftenaufsatz
2018Analysis of compensation effects in aluminum-implanted 4H-SiC devices
Weisse, J.; Hauck, M.; Sledziewski, T.; Tschiesche, M.; Krieger, M.; Bauer, A.; Mitlehner, H.; Frey, L.; Erlbacher, T.
Konferenzbeitrag
2018Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2018Decoration of Al implantation profiles in 4H-SiC by bevel grinding and dry oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton
Poster
2018Determination of compensation ratios of Al-implanted 4H-SiC by TCAD modelling of TLM measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zongwei; Erlbacher, Tobias; Bauer, Anton
Poster
2018Electrical properties of schottky-diodes based on B doped diamond
Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2018Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin
Aufsatz in Buch
2018Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.
Zeitschriftenaufsatz
2018Future technology trends
Lorenz, Leo; Erlbacher, Tobias; Hilt, Oliver
Aufsatz in Buch
2018The GaN trench gate MOSFET with floating islands
Shen, L.; Müller, S.; Cheng, X.; Zhang, D.; Zheng, L.; Xu, D.; Yu, Y.; Meissner, E.; Erlbacher, T.
Zeitschriftenaufsatz
2018Heterogeneous integration of vertical GaN power transistor on Si capacitor for DC-DC converters
Yu, Zechun; Zeltner, Stefan; Boettcher, Norman; Rattmann, Gudrun; Leib, Jürgen; Bayer, Christoph Friedrich; Schletz, Andreas; Erlbacher, Tobias; Frey, Lothar
Vortrag
2018Influence of Al doping concentration and annealing parameters on TiAl based Ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton J.
Konferenzbeitrag
2018Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Konferenzbeitrag
2018Lifetime testing method for ceramic capacitors for power electronics applications
Dresel, Fabian; Tham, Nils; Erlbacher, Tobias; Schletz, Andreas
Konferenzbeitrag
2018Principle of lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias
Poster
20174.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Konferenzbeitrag
2017Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C
Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2017Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2017Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Matthus, C.D.; Erlbacher, T.; Schöfer, B.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2017Influence of Al doping concentration and annealing parameters on TiAl based ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Poster
2017Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Poster
2017Monolithically integrated solid-state-circuit-breaker for high power applications
Huerner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2017Novel advanced analytical design tool for 4H-SiC VDMOSFET devices
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Konferenzbeitrag
2017Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T.
Konferenzbeitrag
2017Stress reduction in high voltage MIS capacitor fabrication
Banzhaf, S.; Kenntner, J.; Grieb, M.; Schwaiger, S.; Erlbacher, T.; Bauer, A.J.; Frey, L.; Frey, L.
Konferenzbeitrag
2017Switching SiC devices faster and more efficient using a DBC mounted terminal decoupling Si-RC element
Matlok, S.; Erlbacher, T.; Krach, F.; Eckardt, B.
Konferenzbeitrag
20164.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Poster
2016Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
Di Benedetto, L.; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Bellone, S.
Zeitschriftenaufsatz
2016ATHENIS-3D: Automotive tested high-voltage and embedded non-volatile integrated SoC platform with 3D technology
Wachmann, Ewald; Saponara, Sergio; Zambelli, C.; Tisserand, Pierre; Charbonnier, Jean; Erlbacher, Tobias; Grünler, Saeideh; Hartler, C.; Siegert, J.; Chassard P.; Ton D.M.; Ferrari, L.; Fanucci, L.
Konferenzbeitrag
2016Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
Hürner, Andreas; Mitlehner, Heinz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2016Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2016A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Liguori, R.; Rubino, Alfredo
Zeitschriftenaufsatz
2016Monolithic 3D TSV-based high-voltage, high-temperature capacitors
Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2016Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias
Zeitschriftenaufsatz
2016Optimized design for 4H-SiC power DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo
Zeitschriftenaufsatz
2016Post-trench processing of silicon deep trench capacitors for power electronic applications
Banzhaf, Stefanie; Schwaiger, Stefan; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2016Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2016Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability
Krach, Florian; Thielen, Nils; Heckel, Thomas; Bauer, Anton J.; Erlbacher, Tobias; Frey, Lothar
Konferenzbeitrag
2016Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter
Konferenzbeitrag
2016A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes
Huang, Yaren; Erlbacher, Tobias; Buettner, Jonas; Wachutka, Gerhard
Konferenzbeitrag
2015High-voltage monolithic 3D capacitors based on through-silicon-via technology
Grünler, Saeideh; Rattmann, Gudrun; Erlbacher, Tobias; Bauer, Anton; Frey, Lothar
Poster
2015Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
Erlbacher, T.; Schwarzmann, H.; Bauer, A.J.; Döhler, G.H.; Schreivogel, M.; Lutz, T.; Guillén, F.H.; Graf, J.; Fix, R.; Frey, L.
Zeitschriftenaufsatz
2015Modeling of the electrochemical etch stop with high reverse bias across pn-junctions
Szwarc, Robert; Frey, Lothar; Weber, Hans; Moder, Iris; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Vortrag
2015Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
Szwarc, R.; Frey, L.; Weber, H.; Moder, I.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Konferenzbeitrag
2015Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2015Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications
Krach, F.; Schwarzmann, H.; Bauer, A.J.; Erlbacher, T.; Frey, L.
Zeitschriftenaufsatz
2015Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability
Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2015Vorrichtung und Verfahren zur Überbrückung eines elektrischen Energiespeichers
Erlbacher, Tobias; Lorentz, Vincent; Waller, Reinhold; Rattmann, Gudrun
Patent
2014Experimental analysis of bipolar SiC-devices for future energy distribution systems
Huerner, A.; Mitlehner, H.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2014Lateral Power Transistors in Integrated Circuits
Erlbacher, T.
Buch
2014Reliability of monolithic RC-snubbers in MOS-based power modules
Erlbacher, T.; Schwarzmann, H.; Krach, F.; Bauer, A.J.; Berberich, S.E.; Kasko, I.; Frey, L.
Konferenzbeitrag
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2014Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2013Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
Iglesias, V.; Martin-Martinez, J.; Porti, M.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Bersuker, G.
Zeitschriftenaufsatz
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2012Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
Schwarzmann, Holger; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar
Konferenzbeitrag
2012Comparative investigation on installation space requirements for input filters of DC-link- and matrix converters based on amplitude pseudo-spectra
Schramm, A.; Lanfer, H.; Petzoldt, J.; Rädel, U.; Schwarzmann, H.; Erlbacher, T.
Konferenzbeitrag
2012Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.
Konferenzbeitrag
2012Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
Iglesias, V.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Porti, M.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Bersuker, G.
Poster
2012Eletrisches Überbrückungselement, insbesondere für Speicherzellen eines Energiespeichers
Dorp, Joachim vom; Erlbacher, Tobias; Frey, L.
Patent
2012Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, T.; Huerner, A.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2012Feasiblity and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, Tobias; Hürner A.; Bauer, Anton J.; Frey, Lothar
Zeitschriftenaufsatz
2012A generic approach for comparing input filter efforts of voltage- and current source converters
Schramm, A.; Lanfer, H.; Petzoldt, J.; Rädel, U.; Schwarzmann, H.; Erlbacher, T.
Konferenzbeitrag
2012Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Berberich, Sven E.; Dorp, Joachim vom; Frey, Lothar
Konferenzbeitrag
2012Ohmic and rectifying contacts on bulk AlN for radiation detector applications
Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar
Zeitschriftenaufsatz, Konferenzbeitrag
2012Reliability characterization of dielectrics in 200V trench capacitors
Erlbacher, Tobias; Schwarzmann, Holger; Bauer, Anton J.; Dorp, Joachim vom; Frey, Lothar
Poster
2012Resistive circuit, circuit layout and driver
Berberich, Sven E.; Wintrich, Arendt; Erlbacher, Tobias
Patent
2012Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Zeitschriftenaufsatz
2011Dielectric layers suitable for high voltage integrated trench capacitors
Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS
Erlbacher, T.; Yanev, V.; Rommel, M.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
Murakami, M.; Rommel, M.; Yanev, V.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2011Monolithic RC-snubber for power electronic applications
Dorp, Joachim vom; Berberich, Sven E.; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar
Konferenzbeitrag
2010Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers
Rommel, M.; Yanev, V.; Paskaleva, A.; Erlbacher, T.; Lemberger, M.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2010Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area
Aygun, G.; Roeder, G.; Erlbacher, T.; Wolf, M.; Schellenberger, M.; Pfitzner, L.
Zeitschriftenaufsatz
2010Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil
Dorp, J. vom; Erlbacher, T.; Lorentz, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2010Reduced on resistance in LDMOS devices by integrating trench gates into planar technology
Erlbacher, T.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2010Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L.
Poster
2010Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L.
Konferenzbeitrag
2009Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L.
Zeitschriftenaufsatz
2009Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2009Search for future high-k dielectrics, boundary conditions and examples
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Konferenzbeitrag
2009Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers
Erlbacher, T.; Graf, T.; DasGupta, N.; Bauer, A.J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2008HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories
Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.
Zeitschriftenaufsatz
2008High-k: Latest developments and perspectives
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Aufsatz in Buch
2008Schichten hoher Dielektrizitätskonstante für den Einsatz in ladungsbasierten nichtflüchtigen Speicherzellen
Erlbacher, T.
Dissertation
2008Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C.
Zeitschriftenaufsatz
2008Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.
Zeitschriftenaufsatz
2007Hafnium silicate as control oxide in non-volatile memories
Erlbacher, T.; Bauer, A.J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz