Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?
Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.
Zeitschriftenaufsatz
2019Mask absorber development to enable next-generation EUVL
Philipsen, V.; Luong, K.V.; Opsomer, K.; Souriau, L.; Rip, J.; Detavernier, C.; Erdmann, A.; Evanschitzky, P.; Laubis, C.; Honicke, P.; Soltwisch, V.; Hendrickx, E.
Konferenzbeitrag
2018Accurate determination of 3D PSF and resist effects in grayscale laser lithography
Onanuga, T.; Kaspar, C.; Sailer, H.; Erdmann, A.
Konferenzbeitrag
2018Application of deep learning algorithms for Lithographic mask characterization
Woldeamanual, D.S.; Erdmann, A.; Maier, A.
Konferenzbeitrag
2018Attenuated PSM for EUV
Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.
Konferenzbeitrag
2018Fourier ptychography for lithography high NA systems
Dejkameh, A.; Erdmann, A.; Evanschitzky, P.; Ekinci, Y.
Konferenzbeitrag
2018Modeling of block copolymer dry etching for directed self-assembly lithography
Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas
Konferenzbeitrag
2018Simulation study of illumination effects in high-NA EUV lithography
Ismail, M.; Evanschitzky, P.; Erdmann, A.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.F.
Konferenzbeitrag
2017Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
Erdmann, A.; Xu, D.; Evanschitzky, P.; Philipsen, V.; Luong, V.; Hendrickx, E.
Zeitschriftenaufsatz
2017Efficient simulation of EUV pellicles
Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2017Levet-set-based inverse lithography under random field shape uncertainty in a vector Hopkins imaging model
Wu, X.; Fühner, T.; Erdmann, A.; Lam, E.Y.
Konferenzbeitrag
2017A physical model for innovative laser direct write lithography
Onanuga, T.; Rumler, M.; Erdmann, A.
Konferenzbeitrag
2017Reducing EUV mask 3D effects by alternative metal absorbers
Philipsen, V.; Luong, K.V.; Souriau, L.; Hendrickx, E.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.
Konferenzbeitrag
2017Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers
Philipsen, V.; Luong, K.V.; Souriau, L.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.; Hendrickx, E.
Zeitschriftenaufsatz
2017Simulation flow and model verification for laser direct-write lithography
Onanuga, T.; Rumler, M.; Erdmann, A.
Zeitschriftenaufsatz
2017Special issue on ptychography
Erdmann, A.; Situ, G.
Zeitschriftenaufsatz
20163D simulation of light exposure and resist effects in laser direct write lithography
Onanuga, Temitope; Erdmann, Andreas
Konferenzbeitrag
2016Automated source/mask/directed self-assembly optimization using a self-adaptive hierarchical modeling approach
Fühner, T.; Michalak, P.; Wu, X.; Erdmann, A.
Konferenzbeitrag
2016Challenges for predictive EUV mask modeling
Evanschitzky, Peter; Erdmann, Andreas
Vortrag
2016Efficient simulation of EUV pellicles
Evanschitzky, Peter; Erdmann, Andreas
Vortrag
2016Extending VLSI and alternative technology with optical and complementary lithography
Lai, K.; Erdmann, A.
Zeitschriftenaufsatz
2016Extreme ultraviolet multilayer defect analysis and geometry reconstruction
Xu, D.; Evanschitzky, P.; Erdmann, A.
Zeitschriftenaufsatz
2016Incorporating photomask shape uncertainty in computational lithography
Wu, X.; Liu, S.; Erdmann, A.; Lam, E.Y.
Konferenzbeitrag
2016Inverse image modeling for defect detection and optical system characterization
Xu, Dongbo
: Erdmann, Andreas
Dissertation
2016Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography
Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.
Zeitschriftenaufsatz
2016Resolution enhancements for semiconductor lithography: A computational perspective
Erdmann, A.
Konferenzbeitrag
2015Application of principal component analysis to EUV multilayer defect printing
Xu, D.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2015Application of the transport of intensity equation to EUV multilayer defect analysis
Xu, D.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2015Continuation of scaling with optical and complementary lithography. Editorial
Lai, K.F.; Erdmann, A.
Zeitschriftenaufsatz
2015Introduction to the special issue on optical lithography
Erdmann, A.; Shibuya, M.
Zeitschriftenaufsatz
2015Mask-induced best-focus-shifts in DUV and EUV lithography
Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.
Konferenzbeitrag
2015Optical and EUV projection lithography: A computational view
Erdmann, A.; Fühner, T.; Evanschitzky, P.; Agudelo, V.; Freund, C.; Michalak, P.; Xu, D.B.
Zeitschriftenaufsatz
2014Aberration measurement technique based on an analytical linear model of a through-focus aerial image
Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Erdmann, A.
Zeitschriftenaufsatz
2014Advances in lithography: Introduction to the feature. Editorial
Erdmann, A.; Liang, R.G.; Sezginer, A.; Smith, B.
Zeitschriftenaufsatz
2014Advances in lithography: Introduction to the feature. Editorial
Erdmann, A.; Liang, R.G.; Sezginer, A.; Smith, B.
Zeitschriftenaufsatz
2014Application of artificial neural networks to compact mask models in optical lithography simulation
Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.
Zeitschriftenaufsatz
2014Artificial evolution for the optimization of lithographic process conditions
Fühner, Tim
: Erdmann, Andreas
Dissertation
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Zeitschriftenaufsatz
2014Compact mask models for optical projection lithography
Agudelo Moreno, Viviana
: Erdmann, Andreas
Dissertation
2014A defocus measurement method for an in situ aberration measurement method using a phase-shift ring mask
Li, S.; Wang, X.; Yang, J.; Tang, F.; Yan, G.; Erdmann, A.
Konferenzbeitrag
2014Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography
Liu, Xiaolei; Wang, Xiangzhao; Li, Sikun; Yan, Guanyong; Erdmann, A.
Zeitschriftenaufsatz
2014Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography
Liu, X.; Wang, X.; Li, S.; Yan, G.; Erdmann, A.
Konferenzbeitrag
2014In situ aberration measurement method using a phase-shift ring mask
Wang, X.; Li, S.; Yang, J.; Tang, F.; Yan, G.; Erdmann, A.
Konferenzbeitrag
2014Lithographic process window optimization for mask aligner proximity lithography
Voelkel, R.; Vogler, U.; Bramati, A.; Erdmann, A.; Ünal, N.; Hofmann, U.; Hennemeyer, M.; Zoberbier, R.; Nguyen, D.; Brugger, J.
Konferenzbeitrag
2014Pixel-based defect detection from high-NA optical projection images
Xu, D.B.; Fühner, T.; Erdmann, A.
Zeitschriftenaufsatz
2014Rigorous simulation and optimization of the lithography/directed self-assembly co-process
Fühner, T.; Welling, U.; Müller, M.; Erdmann, A.
Konferenzbeitrag
2013Adaptive denoising method to improve aberration measurement performance
Yang, J.; Wang, X.; Li, S.; Duan, L.; Bourov, A.Y.; Erdmann, A.
Zeitschriftenaufsatz
2013Application of artificial neural networks to compact mask models in optical lithography simulation
Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.
Konferenzbeitrag
2013Defect inspection and detection using optical image projection
Xu, D.; Li, S.; Wang, X.; Erdmann, A.
Vortrag
2013Defect parameters retrieval based on optical projection images
Xu, D.; Li, S.; Wang, X.; Fühner, T.; Erdmann, A.
Konferenzbeitrag
2013Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach
Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas
Zeitschriftenaufsatz
2013High-order aberration measurement technique based on quadratic Zernike model with optimized source
Yang, J.; Wang, X.; Li, S.; Duan, L.; Yan, G.; Xu, D.; Bourov, A.Y.; Erdmann, A.
Zeitschriftenaufsatz
2013In situ aberration measurement technique based on an aerial image with an optimized source
Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Duan, L.; Bourov, A.Y.; Erdmann, A.
Zeitschriftenaufsatz
2013Modeling strategies for EUV mask multilayer defect dispositioning and repair
Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheere, R.
Konferenzbeitrag
2013Modeling studies on alternative EUV mask concepts for higher NA
Erdmann, A.; Fühner, T.; Evanschitzky, P.; Neumann, J.T.; Ruoff, J.; Gräupner, P.
Konferenzbeitrag
2013Source mask optimization using real-coded genetic algorithms
Yang, C.; Wang, X.; Li, S.; Erdmann, A.
Konferenzbeitrag
2012Advanced mask aligner lithography (AMALITH)
Völkel, R.; Vogler, U.; Bramati, A.; Weichelt, T.; Stürzebecher, L.; Zeitner, U.D.; Motzek, K.; Erdmann, A.; Hornung, M.; Zoberbier, R.
Konferenzbeitrag
2012Analysis of EUV mask multilayer defect printing characteristics
Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheerec, R.
Konferenzbeitrag
2012Efficient simulation of EUV multilayer defects with rigorous data base approach
Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas
Konferenzbeitrag
2012Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography
Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.
Konferenzbeitrag
2012Imaging characteristics of binary and phase shift masks for EUV projection lithography
Erdmann, A.; Evanschitzky, P.
Konferenzbeitrag
2012In situ aberration measurement technique based on quadratic Zernike model
Yang, J.; Wang, X.; Li, S.; Duan, L.; Yan, G.; Xu, D.; Bourov, A.Y.; Erdmann, A.
Konferenzbeitrag
2012In-situ aberration measurement technique based on aerial image with optimized source
Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Duan, L.; Bourov, A.Y.; Erdmann, A.
Konferenzbeitrag
2012Influence of two typical defects on the near-field optical properties of multilayer dielectric compression gratings
Jin, Y.X.; Guan, H.Y.; Kong, F.Y.; Wang, J.P.; Erdmann, A.; Liu, S.J.; Du, Y.; Shao, J.D.; He, H.B.; Yi, K.
Zeitschriftenaufsatz
2012Mask aligner lithography simulation - From lithography simulation to process validation
Motzek, K.; Partel, S.; Bramati, A.; Hofmann, U.; Unal, N.; Hennemeyer, M.; Hornung, M.; Heindl, A.; Ruhland, M.; Erdmann, A.; Hudek, P.
Zeitschriftenaufsatz
2012Mutual source, mask and projector pupil optimization
Fühner, T.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2012Resist properties required for 6.67 nm extreme ultraviolet lithography
Kozawa, T.; Erdmann, A.
Zeitschriftenaufsatz
2012Resonant metamaterials for contrast enhancement in optical lithography
Dobmann, S.; Shyroki, D.; Banzer, P.; Erdmann, A.; Peschel, U.
Zeitschriftenaufsatz
2012Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
2012Simulation of 3D inclined/rotated UV lithography and its application to microneedles
Liu, S.; Roeder, G.; Aygun, G.; Motzek, K.; Evanschitzky, P.; Erdmann, A.
Zeitschriftenaufsatz
2011Accuracy and performance of 3D mask models in optical projection lithography
Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.; Shao, F.; Limmer, S.; Fey, D.
Konferenzbeitrag
2011Analytical model for EUV mask diffraction field calculation
Cao, Y.; Wang, X.; Erdmann, A.; Bu, P.; Bu, Y.
Konferenzbeitrag
2011Compensation of mask induced aberrations by projector wavefront control
Evanschitzky, Peter; Shao, Feng; Fühner, Tim; Erdmann, Andreas
Konferenzbeitrag
2011Computational algorithms for optimizing mask layouts in proximity printing
Motzek, K.; Vogler, U.; Hennemeyer, M.; Hornung, M.; Voelkel, R.; Erdmann, A.; Meliorisz, B.
Zeitschriftenaufsatz
2011Determination of the dill parameters of thick positive resist for use in modeling applications
Roeder, G.; Liu, S.; Aygun, G.; Evanschitzky, P.; Erdmann, A.; Schellenberger, M.; Pfitzner, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2011Feasibility study of chemically amplified resists for short wavelength extreme ultraviolet lithography
Kozawa, T.; Erdmann, A.
Zeitschriftenaufsatz
2011Image simulation of projection systems in photolithography
Evanschitzky, Peter; Fühner, Tim; Erdmann, Andreas
Konferenzbeitrag
2011Influence of geometry variations and defects on the near-field optical properties of pulsed compression gratings
Wang, J.; Erdmann, A.; Liu, S.; Shao, J.; Jin, Y.; He, H.; Yi, K.
Konferenzbeitrag
2011Innovations in structured thin film design and fabrication for optical applications
Qi, H.; Wang, J.; Erdmann, A.; Jin, Y.; Shao, J.; Fan, Z.
Konferenzbeitrag
2011Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography
Erdmann, A.; Shao, F.; Agudelo, V.; Fühner, T.; Evanschitzky, P.
Zeitschriftenaufsatz
2011Modellierung und Simulation bei Mask Aligner Lithographie (Source-Mask Optimization)
Vogler, U.; Bramati, A.; Völkel, R.; Hornung, M.; Zoberbier, R.; Motzek, M.; Erdmann, A.; Stürzebecher, L.; Zeitner, U.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Numerical optimization of illumination and mask layout for the enlargement of process windows and for the control of photoresist profiles in proximity printing
Motzek, Kristian; Partel, Stefan; Vogler, Uwe; Erdmann, Andreas
Konferenzbeitrag
2011Predictive modeling of EUV-lithography: The role of mask, optics, and photoresist effects
Erdmann, A.; Evanschitzky, P.; Shao, F.; Fühner, T.; Lorusso, G.; Hendrickx, E.; Goethals, A.M.; Jonckheere, R.; Bret, T.; Hofmann, T.
Konferenzbeitrag
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Konferenzbeitrag
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen
Poster
2010Acid diffusion effects between resists in freezing processes used for contact hole patterning
Fuhrmann, J.; Fiebach, A.; Erdmann, A.; Trefonas, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2010Characterization of the scattering effect of complex mask geometries with surface roughness
Rahimi, Z.; Erdmann, A.; Pflaum, C.
Konferenzbeitrag
2010Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis
Evanschitzky, P.; Fühner, T.; Shao, F.; Erdmann, A.
Konferenzbeitrag
2010Extraordinary low transmission of a metamaterial for application in lithography
Dobmann, S.; Ploss, D.; Reibold, D.; Erdmann, A.; Peschel, U.
Konferenzbeitrag
2010Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models
Shao, F.; Evanschitzky, P.; Motzek, K.; Erdmann, A.
Konferenzbeitrag
2010Mask and wafer topography effects in optical and EUV-lithography
Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.
Konferenzbeitrag
2010Mask diffraction analysis and optimization for extreme ultraviolet masks
Erdmann, A.; Evanschitzky, P.; Fühner, T.
Zeitschriftenaufsatz
2010Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography
Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2010Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes
Erdmann, A.; Shao, F.; Fuhrmann, J.; Fiebach, A.; Patsis, G.P.; Trefonas, P.
Konferenzbeitrag
2010Modeling of exploration of reversible contrast enhacement layers for double exposure lithography
Shao, F.; Cooper, G.D.; Chen, Z.; Erdmann, A.
Konferenzbeitrag
2010Optimization of illumination pupils and mask structures for proximity printing
Motzek, K.; Bich, A.; Erdmann, A.; Hornung, M.; Hennemeyer, M.; Meliorisz, B.; Hofmann, U.; Ünal, N.; Völkel, R.; Partel, S.; Hudek, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2010Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes
Rahimi, Z.; Erdmann, A.; Evanschitzky, P.; Pflaum, C.
Konferenzbeitrag
2010Topography-aware BARC optimization for double patterning
Liu, S.; Fühner, T.; Shao, F.; Barenbaum, A.; Jahn, J.; Erdmann, A.
Konferenzbeitrag
2009Advanced lithography models for strict process control in the 32 nm technology node
Patsis, G.P.; Drygiannakis, D.; Raptis, I.; Gogolides, E.; Erdmann, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Efficient analysis of three dimensional EUV mask imaging artifacts using the waveguide decomposition method
Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Konferenzbeitrag
2009Efficient simulation and optimization of wafer topographies in double patterning
Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Konferenzbeitrag
2009Exploration of linear and non-linear double exposure techniques by simulation
Petersen, J.S.; Greenway, R.T.; Fühner, T.; Evanschitzky, P.; Shao, F.; Erdmann, A.
Konferenzbeitrag
2009Extended Abbe approach for fast and accurate lithography imaging simulations
Evanschitzky, P.; Erdmann, A.; Fühner, T.
Konferenzbeitrag
2009Extraordinary low transmission effects for ultra-thin patterned metal films
Reibold, D.; Shao, F.; Erdmann, A.; Peschel, U.
Zeitschriftenaufsatz
2009Finite Integration (FI) method for modelling optical waves in lithography masks
Rahimi, Z.; Erdmann, A.; Pflaum, C.
Konferenzbeitrag
2009Lithographic importance of base diffusion in chemically amplified photoresists
Schnattinger, T.; Erdmann, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Lithography simulation: Modeling techniques and selected applications
Erdmann, A.; Fühner, T.; Shao, F.; Evanschitzky, P.
Konferenzbeitrag
2009Mask diffraction analysis and optimization for EUV masks
Erdmann, A.; Evanschitzky, P.; Fühner, T.
Konferenzbeitrag
2009A model of self-limiting residual acid diffusion for pattern doubling
Fuhrmann, J.; Fiebach, A.; Uhle, M.; Erdmann, A.; Szmanda, C.R.; Truong, C.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects
Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.
Konferenzbeitrag
2009Rigorous diffraction simulations of topographic wafer stacks in double patterning
Feng, S.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Benchmark of rigorous methods for electromagnetic field simulations
Burger, S.; Zschiedrich, L.; Schmidt, F.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2008A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography
Schnattinger, T.; Erdmann, A.
Konferenzbeitrag
2008Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique
Shao, F.; Evanschitzky, P.; Reibold, D.; Erdmann, A.
Konferenzbeitrag
2008Increasing the predictability of AIMSTM measurements by coupling to resist simulations
Meliorisz, B.; Erdmann, A.; Schnattinger, T.; Strößner, U.; Scherübl, T.; Bisschop, P. de; Philipsen, V.
Konferenzbeitrag
2008Investigation of high-resolution contact printing
Meliorisz, B.; Partel, S.; Schnattinger, T.; Fühner, T.; Erdmann, A.; Hudek, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Optimization of mask absorber stacks and illumination settings for contact hole imaging
Erdmann, A.; Fühner, T.; Evanschitzky, P.
Konferenzbeitrag
2008Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects
Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.
Konferenzbeitrag
2008Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios
Erdmann, A.; Evanschitzky, P.; Fühner, T.; Schnattinger, T.; Xu, C.B.; Szmanda, C.
Konferenzbeitrag
2008A simulation study on the impact of lithographic process variations on CMOS device performance
Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.
Konferenzbeitrag
2008Simulation-based EUV source and mask optimization
Fühner, T.; Erdmann, A.; Evanschitzky, P.
Konferenzbeitrag
2007Direct optimization approach for lithographic process conditions
Fühner, T.; Erdmann, A.; Seifert, S.
Zeitschriftenaufsatz
2007Dr.LiTHO - a development and research lithography simulator
Fühner, T.; Schnattinger, T.; Ardelean, G.; Erdmann, A.
Konferenzbeitrag
2007Fast near field simulation of optical and EUV masks using the waveguide method
Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2007Impact of alternative mask stacks on the imaging performance at NA 1.20 and above
Philipsen, V.; Mesuda, K.; Bisschop, P. de; Erdmann, A.; Citarella, G.; Evanschitzky, P.; Birkner, R.; Richter, R.; Scherübl, T.
Konferenzbeitrag
2007The impact of the mask stack and its optical parameters on the imaging performance
Erdmann, A.; Fühner, T.; Seifert, S.; Popp, S.; Evanschitzky, P.
Konferenzbeitrag
2007Memetic algorithms: Parametric optimization for microlithography
Dürr, C.; Fühner, T.; Tollkühn, B.; Erdmann, A.; Kokai, G.
Aufsatz in Buch
2007Rigorous electromagnetic field mask modeling and related lithographic effects in the low k(1) and ultrahigh numerical aperture regime
Erdmann, A.; Evanschitzky, P.
Zeitschriftenaufsatz
2007Simulation of larger mask areas using the waveguide method with fast decomposition technique
Evanschitzky, P.; Shao, F.; Erdmann, A.; Reibold, D.
Konferenzbeitrag
2007Simulation of mask proximity printing
Meliorisz, B.; Erdmann, A.
Zeitschriftenaufsatz
2007Simulation of proximity and contact lithography
Meliorisz, B.; Evanschitzky, P.; Erdmann, A.
Zeitschriftenaufsatz
2006Accurate extraction of maximum current densities from the layout
Seidl, A.; Schnattinger, T.; Erdmann, A.; Hartmann, H.; Petrashenko, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Benchmark of a lithography simulation tool for next generation applications
Tollkühn, B.; Uhle, M.; Fuhrmann, J.; Gärtner, K.; Heubner, A.; Erdmann, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Defect printability study using EUV lithography
Holfeld, C.; Bubke, K.; Lehmann, F.; La Fontaine, B.; Pawloski, A.R.; Schwarzl, S.; Kamm, F.M.; Graf, T.; Erdmann, A.
Konferenzbeitrag
2006Efficient optimization of lithographic process conditions using a distributed, combined global/local search approach
Fühner, T.; Popp, S.; Dürr, C.; Erdmann, A.
Konferenzbeitrag
2006A fast development simulation algorithm for discrete resist models
Schnattinger, T.; Bär, E.; Erdmann, A.
Konferenzbeitrag, Zeitschriftenaufsatz, Konferenzbeitrag
2006Mask defect printing mechanisms for future lithography generations
Erdmann, A.; Graf, T.; Bubke, K.; Höllein, I.; Teuber, S.
Konferenzbeitrag
2006Mesoscopic resist processing simulation in optical lithography
Schnattinger, T.; Bär, E.; Erdmann, A.
Konferenzbeitrag
2006Rigorous mask modeling beyond the Hopkins approach
Schermer, J.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2006Rigorous mask modeling using waveguide and FDTD methods. An assessment for typical hyper NA imaging problems
Erdmann, A.; Evanschitzky, P.; Citarella, G.; Fühner, T.; Bisschop, P. de
Konferenzbeitrag
2006Rigorous mask modelling beyond the hopkins approach
Schermer, J.; Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2006Three-dimensional resist development simulation with discrete models
Schnattinger, T.; Baer, E.; Erdmann, A.
Zeitschriftenaufsatz
2006Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask
Erdmann, A.; Citarella, G.; Evanschitzky, P.; Schermer, H.; Philipsen, V.; Bisschop, P. de
Konferenzbeitrag
2005Aerial image analysis for defective masks in optical lithography
Graf, T.; Erdmann, A.; Evanschitzky, P.; Tollkühn, B.; Eggers, K.; Ziebold, R.; Teuber, S.; Höllein, I.
Konferenzbeitrag
2005Correlation analysis: A fast and reliable method for a better understanding of simulation models in optical lithography
Tollkühn, B.; Heubner, A.; Elian, K.; Ruppenstein, B.; Erdmann, A.
Konferenzbeitrag
2005Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm
Fühner, T.; Erdmann, A.
Konferenzbeitrag
2005Mask and wafer topography effects in immersion lithography
Erdmann, A.; Evanschitzky, P.; Bisschop, P. de
Konferenzbeitrag
2005Mask modeling in the low k(1) and ultrahigh NA regime: Phase and polarization effects
Erdmann, A.
Konferenzbeitrag
2005Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects
Erdmann, A.
Konferenzbeitrag
2005Modeling and simulation
Erdmann, A.
Aufsatz in Buch
2005Simplified resist models for efficient simulation of contact holes and line ends
Tollkühn, B.; Erdmann, A.; Semmler, A.; Nölscher, C.
Konferenzbeitrag
2005Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography
Bisschop, P. de; Erdmann, A.; Rathsfeld, A.
Konferenzbeitrag
2005Three dimensional EUV simulations: a new mask near field and imaging simulation system
Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2004Do we need complex resist models for predictive simulation of lithographic process performance?
Tollkühn, B.; Erdmann, A.; Lammers, J.; Nolscher, C.; Semmler, A.
Konferenzbeitrag
2004Enhanced model for the efficient 2D and 3D simulation of defective EUV masks
Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2004Genetic algorithm for optimization and calibration in process simulation
Fühner, T.; Erdmann, A.; Ortiz, C.J.; Lorenz, J.
Konferenzbeitrag
2004Genetic algorithms for geometry optimization in lithographic imaging systems
Fühner, T.; Erdmann, A.; Schnattinger, T.
Konferenzbeitrag
2004Genetic algorithms to improve mask and illumination geometries in lithographic imaging systems
Fühner, T.; Erdmann, A.; Farkas, R.; Tollkühn, B.; Kokai, G.
Konferenzbeitrag
2004The impact of EUV mask defects on lithographic process performance
Evanschitzky, P.; Erdmann, A.
Konferenzbeitrag
2004Präparation und Charakterisierung ultradünner Polyelektrolytfilme
Erdmann, A.
Diplomarbeit
2004Process optimization using lithography simulation
Erdmann, A.
Konferenzbeitrag
2004Simulation is essential to successful design of modern semiconductors
Erdmann, A.
Zeitschriftenaufsatz
2004Towards automatic mask and source optimization for optical lithography
Erdmann, A.; Fühner, T.; Schnattinger, T.; Tollkühn, B.
Konferenzbeitrag
2004Verfahren zur Bestimmung von Strukturparametern einer Oberflaeche
Weidner, A.; Erdmann, A.; Schneider, C.
Patent
2003Efficient simulation of light diffraction from 3-dimensional EUV-masks using field decomposition techniques
Erdmann, A.; Kalus, C.K.; Schmöller, T.; Wolter, A.
Konferenzbeitrag
2003EUV mask simulation for AIMS
Windpassinger, R.; Rosenkranz, N.; Scherübl, T.; Evanschitzky, P.; Erdmann, A.; Zibold, A.
Konferenzbeitrag
2003Mask and source optimization for lithographic imaging systems
Erdmann, A.; Farkas, R.; Fühner, T.; Tollkühn, B.; Kokai, G.
Konferenzbeitrag
2003New models for the simulation of post-exposure bake of chemically amplified resist
Matiut, D.; Erdmann, A.; Tollkühn, B.; Semmler, A.
Konferenzbeitrag
2003Optical lithography for future technology generations
Erdmann, A.
Zeitschriftenaufsatz
2003Rigorous simulation of alignment for microlithography
Nikolaev, N.I.; Erdmann, A.
Zeitschriftenaufsatz
2003Rigorous simulation of defective EUV multilayer masks
Sambale, C.; Schmöller, T.; Erdmann, A.; Evanschitzky, P.; Kalus, C.
Konferenzbeitrag
2003Rigorous simulation of exposure over nonplanar wafers
Erdmann, A.; Kalus, C.K.; Schmöller, T.; Klyonova, Y.; Sato, T.; Endo, A.; Shibata, T.; Kobayashi, Y.
Konferenzbeitrag
2003Rigorous Simulation of Lithographic Exposure of Photoresist over a Nonplanar Wafer
Erdmann, A.; Kalus, C.
Konferenzbeitrag
2003Simulation of extreme ultraviolet masks with defective multilayers
Evanschitzky, P.; Erdmann, A.; Besacier, M.; Schiavone, P.
Konferenzbeitrag
2003Will Darwin's law help us to improve our resist models?
Tollkühn, B.; Fühner, T.; Matiut, D.; Erdmann, A.; Semmler, A.; Kuchler, B.; Kokai, B.
Konferenzbeitrag
2002Enhancements in rigorous simulation of light diffraction from phase-shift masks
Erdmann, A.; Kachwala, N.
Konferenzbeitrag
2002Herstellung von optisch abgebildeten Strukturen mit einer Phasenschiebung von transmittierten Lichtanteilen
Erdmann, A.; Vial, A.
Patent
2002Modification of boundaries conditions in the FDTD algorithm for EUV masks modeling
Vial, A.; Erdmann, A.; Schmoeller, T.; Kalus, C.
Konferenzbeitrag
2002New methods to calibrate simulation parameters for chemically amplified resists
Tollkuehn, B.; Erdmann, A.; Kivel, N.; Robertson, S.A.; Kang, D.; Hansen, S.G.; Fumar, P.A.; Tsann, B.C.; Hoppe, W.
Konferenzbeitrag
20013D-electromagnetic field simulation for Low-k1 lithography applications
Erdmann, A.; Gordon, R.; McCallum, M.; Rosenbusch, A.
Zeitschriftenaufsatz
2001Automatic resist parameter calibration procedure for lithography simulation
Tollkuehn, B.; Hoepfl, M.; Erdmann, A.; Majoni, S.; Jess, M.
Konferenzbeitrag
2001Benchmarking of available rigorous electromagnetic field (EMF) simulators for phase-shift mask applications
Kalus, C.; List, S.; Erdmann, A.; Gordon, R.; McCallum, M.; Semmler, A.
Zeitschriftenaufsatz
2001Comparison of simulation approaches for chemically amplified resists
Erdmann, A.; Henke, W.; Robertson, S.; Richter, E.; Tollkühn, B.; Hoppe, W.
Konferenzbeitrag
2001The impact of exposure induced refractive index changes of photoresists on the photolithographic process
Erdmann, A.; Henderson, C.L.; Willson, C.G.
Zeitschriftenaufsatz
2001Optical simulation of 3D Mask effects
Rosenbusch, A.; Erdmann, A.; Friedrich, C.
Zeitschriftenaufsatz
2001Topography effects and wave aberrations in advanced PSM technology
Erdmann, A.
Konferenzbeitrag
2000Optimizing edge topography of alternating phase shift masks using rigorous mask modelling
Friedrich, C.; Mader, L.; Erdmann, A.; List, S.; Gordon, R.; Kalus, C.; Griesinger, U.; Pforr, R.; Mathuni, J.; Ruhl, G.; Maurer, W.
Konferenzbeitrag
2000Rigorous diffraction analysis for future mask technology
Erdmann, A.; Friedrich, C.
Konferenzbeitrag
1999FIRM: a new software tool for calibration of lithography simulation
Krüger, D.; Kalus, C.K.; Erdmann, A.; Friedrich, C.; Käsmaier, R.; Feike, A.
Konferenzbeitrag
1998Fine tuned profile simulation of holographically exposed photoresist gratings
Zanke, C.; Gombert, A.; Erdmann, A.; Weiss, M.
Zeitschriftenaufsatz
1998The impact of aberration averaging during step-and-scan on the photolithographic process
Erdmann, A.; Arnz, M.
Zeitschriftenaufsatz
1998Improved design of magneto-optic rib waveguides for optical isolators
Bahlmann, N.; Chandrasekhara, V.; Erdmann, A.; Gerhardt, R.; Hertel, P.; Lehmann, R.; Salz, D.; Schröteler, F.; Wallenhorst, M.; Dötsch, H.
Zeitschriftenaufsatz
1998Lithographic process simulation for scanners
Erdmann, A.; Arnz, M.; Maenhoudt, M.; Baselmans, J.; Osnabrugge, J.C. van
Konferenzbeitrag
1998Modeling parameter extraction for DNQ-Novolac thin film resists
Henderson, C.L.; Scheer, S.A.; Tsiartas, P.C.; Rathsack, B.M.; Sagan, J.P.; Dammel, R.R.; Erdmann, A.; Willson, C.G.
Konferenzbeitrag
1998Simulation and optimization of holographically exposed photoresist gratings
Zanke, C.; Gombert, A.; Erdmann, A.; Weiss, M.
Konferenzbeitrag
1998Simulation of optical lithography
Erdmann, A.; Henke, W.
Konferenzbeitrag
1998Some aspects of thick film resist performance and modeling
Erdmann, A.; Henderson, C.L.; Willson, C.G.; Dammel, R.R.
Konferenzbeitrag
1997Influence of optical nonlinearities of photoresists on the photolithographic process
Erdmann, A.; Henderson, C.L.; Willson, C.G.; Henke, W.
Konferenzbeitrag
1997Influence of optical nonlinearities of the photoresist on the photolithographic process
Erdmann, A.; Henderson, C.L.; Willson, C.G.; Henke, W.
Konferenzbeitrag
1996Application of magnetic garnet films in optical communication
Doetsch, H.; Erdmann, A.; Fehndrich, M.; Gerhardt, R.; Hertel, P.; Luermann, B.; Shamonin, M.; Winkler, H.P.; Wallenhorst, M.
Konferenzbeitrag
1996Modification of the resolution limits of the photolithogaphic process due to nonlinear optical propagation effects in the resist layers
Erdmann, A.
Konferenzbeitrag
1996Simulation of light propagation in optical linear and nonlinear resist layers by finite difference beam propagation and other methods
Erdmann, A.; Henke, W.
Zeitschriftenaufsatz