Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Charakterisierung der Zuverlässigkeit in der High-k Metal Gate Technologie
Drescher, Maximilian; Erben, Elke; Grass, Carsten; Trentzsch, Martin; Lazarevic, Florian; Leitsmann, Roman; Plaenitz, Philipp; Mchedlidze, Teimuraz; Seidel, Konrad; Liske, Romy; Bartha, Johann Wolfgang
Konferenzbeitrag
2017Interface traps in 28 nm node field effect transistors detected by capacitance transient spectroscopy
Mchedlidze, T.; Drescher, M.; Erben, E.; Weber, J.
Zeitschriftenaufsatz
2017Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology
Leitsmann, R.; Lazarevic, F.; Drescher, M.; Erben, E.
Zeitschriftenaufsatz
2017Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- k CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration
Lazarevic, F.; Leitsmann, R.; Drescher, M.; Erben, E.; Plänitz, P.; Schreiber, M.
Zeitschriftenaufsatz
2016Capacitance transient spectroscopy measurements on high-k metal gate field effect transistors fabricated using 28nm technology node
Mchedlidze, T.; Drescher, M.; Erben, E.; Weber, J.
Konferenzbeitrag
2015Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology
Drescher, M.; Naumann, A.; Sundqvist, J.; Erben, E.; Grass, C.; Trentzsch, M.; Lazarevic, F.; Leitsmann, R.; Plaenitz, P.
Zeitschriftenaufsatz
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Konferenzbeitrag
2014Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors
Ocker, J.; Kupke, S.; Slesazeck, S.; Mikolajick, T.; Erben, E.; Drescher, M.; Naumann, A.; Lazarevic, F.; Leitsmann, R.
Konferenzbeitrag
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Zeitschriftenaufsatz
2013TEMAZ/O-3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal-insulator-metal capacitors
Weinreich, W.; Tauchnitz, T.; Polakowski, P.; Drescher, M.; Riedel, S.; Sundqvist, J.; Seidel, K.; Shirazi, M.; Elliott, S.D.; Ohsiek, S.; Erben, E.; Trui, B.
Zeitschriftenaufsatz
2011Dielectric backside passivation - improvements by dipole optimization
Jakschik, S.; Erben, E.; Benner, F.; Kupke, S.; Dirnstorfer, I.; Rose, M.; Endler, I.; Mikolajick, T.
Konferenzbeitrag
2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.M.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.
Zeitschriftenaufsatz
2011Synthesis of SrTiO3 by crystallization of SrO/TiO2 superlattices prepared by atomic layer deposition
Riedel, Stefan; Neidhardt, J.; Jansen, S.; Wilde, Lutz; Sundqvist, Jonas; Erben, E.; Teichert, S.; Michaelis, A.
Zeitschriftenaufsatz
2010Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
Zhou, D.; Schroeder, U.; Xu, J.; Weinreich, W.; Heitmann, J.; Jegert, G.; Kerber, M.; Knebel, S.; Erben, E.; Mikolajick, T.
Zeitschriftenaufsatz
2009Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics
Schroeder, U.; Weinreich, W.; Erben, E.; Mueller, J.; Wilde, L.; Heitmann, J.; Agaiby, R.; Zhou, D.; Jegert, G.; Kersch, A.
Konferenzbeitrag
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Zeitschriftenaufsatz
2009Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks
Pakaleva, A.; Lemberger, M.; Bauer, A.J.; Weinreich, W.; Heitmann, J.; Erben, E.; Schröder, U.; Oberbeck, L.
Zeitschriftenaufsatz
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster