Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1996InGaAsP/InP 1.55-micron lasers with chemically assisted ion beam-etched facets
Daleiden, J.; Eisele, K.; Keller, R.; Vollrath, G.; Fiedler, F.; Ralston, J.D.
Zeitschriftenaufsatz
1995Characteristics of a two-component chemically-assisted ion-beam etching techniques for dry etching of high-speed multiple quantum well laser mirrors
Sah, R.E.; Ralston, J.D.; Weisser, S.; Eisele, K.
Zeitschriftenaufsatz
1995Chemical analysis of a C12/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions
Daleiden, J.; Eisele, K.; Sah, R.E.; Schmidt, K.H.; Ralston, J.D.
Zeitschriftenaufsatz
1995Low-temperature CAIBE processes for InP-based optoelectronics
Daleiden, J.; Eisele, K.; Ralston, J.D.; Fiedler, F.; Vollrath, G.
Konferenzbeitrag
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Konferenzbeitrag
1994Enhanced CAIBE for high-speed OEICs
Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B.
Zeitschriftenaufsatz
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Konferenzbeitrag
1994Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.
Zeitschriftenaufsatz
1992A second look at reactive ion-beam etching and chemically-assisted ion-beam etching
Eisele, K.M.
Zeitschriftenaufsatz
1990Photolytic silicon nitride deposition for gallium arsenide by 193 excimer laser radiation
Rothemund, W.; Dischler, B.; Eisele, K.M.
Zeitschriftenaufsatz
1987Electrode separation and convex electrode surfaces in plasma etching
Eisele, K.M.
Zeitschriftenaufsatz
1986Deposition of polymer film patterns by ion beams
Fritzsche, C.R.; Eisele, K.M.
Zeitschriftenaufsatz
1986Etching of SiO2 in a narrowly confined plasma of high power density
Eisele, K.M.
Zeitschriftenaufsatz
19851.54-micro m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy.
Pomrenke, G.; Axmann, A.; Schneider, J.; Eisele, K.M.; Haydl, W.H.; Ennen, H.
Zeitschriftenaufsatz
1984Effects of heavy metal contamination from corrosive gas and dopant handling equipment in silicon wafer processing
Klausmann, E.; Eisele, K.M.
Zeitschriftenaufsatz
1983Deposition of masking films by ion beam induced polymerization.
Eisele, K.M.; Fritzsche, C.
Aufsatz in Buch
1982Die Anwendung der Plasmamassenspektrometrie beim Plasmaaetzen
Eisele, K.M.
Zeitschriftenaufsatz
1982Phosphorus pentaflouride and sulfurylfluoride applied to etch SiO2 in search for higher selectivities
Eisele, K.M.
Zeitschriftenaufsatz
1975Anwendung von Halbleiter-Bauelementen
Hampel, Bruno; Eisele, K.; Röhrig, R.; Lindner, E.; Müller, J.; Schedl, H.
Bericht
1973VERFAHREN ZUR PASSIVIERUNG DER OBERFLAECHE VON HALBLEITERBAUELEMENTEN MIT P-N-UEBERGAENGEN
Goetzberger, A.; Eisele, K.
Patent