Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Analysis of the potential of gallium nitride based monolithic power amplifiers in the microwave domain with more than an octave bandwidth
Dennler, P.
: Ambacher, O. (Referent); Schumacher, H. (Referent)
Dissertation
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2013(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Zeitschriftenaufsatz
2013Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
Dennler, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
20128-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag