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| 2008 | Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C. | Zeitschriftenaufsatz |
| 2001 | Barium, strontium and bismuth contamination in CMOS processes
Boubekeur, H.; Mikolajick, T.; Höpfner, J.; Dehm, C.; Pamler, W.; Steiner, J.; Kilian, G.; Kolbesen, B.O.; Bauer, A.; Frey, L.; Ryssel, H. | Konferenzbeitrag |
| 2001 | Impact of platinum contamination on ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
| 2000 | Aspects of barium contamination in high dielectric dynamic random-access memories
Boubekeur, H.; Hopfner, J.; Mikolajick, T.; Dehm, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
| 1994 | Ion-beam induced CoSi2 layers - formation and contact properties.
Dehm, C.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
| 1994 | Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments
Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1993 | Effect of ion-beam mixing temperature on cobalt silicide formation
Kasko, I.; Dehm, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
| 1993 | Influence of impurities on ion beam induced TiSi2 formation
Dehm, C.; Raum, B.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
| 1992 | The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J. | Zeitschriftenaufsatz |
| 1992 | Influence of low-dose ion-beam mixing on CoSi2 formation
Kasko, I.; Dehm, C.; Ryssel, H. | Konferenzbeitrag |
| 1992 | Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing
Dehm, C.; Kasko, I.; Burte, E.P.; Ryssel, H. | Konferenzbeitrag |
| 1992 | Shallow, titanium-silicided p and n junction formation by triple germanium amorphization
Dehm, C.; Gyulai, J.; Ryssel, H. | Zeitschriftenaufsatz |
| 1991 | Formation and contact properties of titanium-silicided shallow junctions
Dehm, C.; Gyulai, J.; Ryssel, H. | Konferenzbeitrag |
| 1989 | Ion-beam mixed MoSi2 layers - formation and contract properties
Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G. | Konferenzbeitrag |
| 1988 | The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.
Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G. | Aufsatz in Buch |