Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
Daleiden, J.; Kiefer, R.; Klußmann, S.; Kunzer, M.; Manz, C.; Walther, M.; Braunstein, J.; Weimann, G.
Zeitschriftenaufsatz
1997Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
Chazan, P.; Morgott, S.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Moritz, R.; Daleiden, J.; Braunstein, J.; Weimann, G.
Konferenzbeitrag
1997Trockenätzverfahren für die Herstellung von monolithisch integrierten optoelektronischen Schaltkreisen
Daleiden, J.
Dissertation
1997Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J.
Zeitschriftenaufsatz
1996Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Zeitschriftenaufsatz
1996Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures
Sah, R.E.; Ralston, J.D.; Daleiden, J.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Benz, W.
Zeitschriftenaufsatz
1996High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.
Konferenzbeitrag
1996InGaAsP/InP 1.55-micron lasers with chemically assisted ion beam-etched facets
Daleiden, J.; Eisele, K.; Keller, R.; Vollrath, G.; Fiedler, F.; Ralston, J.D.
Zeitschriftenaufsatz
1996Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Konferenzbeitrag
199537 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Konferenzbeitrag
1995Chemical analysis of a C12/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions
Daleiden, J.; Eisele, K.; Sah, R.E.; Schmidt, K.H.; Ralston, J.D.
Zeitschriftenaufsatz
1995Low-temperature CAIBE processes for InP-based optoelectronics
Daleiden, J.; Eisele, K.; Ralston, J.D.; Fiedler, F.; Vollrath, G.
Konferenzbeitrag
1995Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J.
Konferenzbeitrag