Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms
Wehring, Bettina; Hoffmann, R.; Gerlich, Lukas; Czernohorsky, Malte; Uhlig, B.; Seidel, R.; Barchewitz, T.; Schlaphof, F.; Meinshausen, L.; Leyens, C.
Konferenzbeitrag
2020Modelling of three dimensional deep trench capacitors and identification of parasitic elements
Agarwal, Rishabh
: Czernohorsky, Malte (Betreuer); Lakner, Hubert (Betreuer); Bartha, J.W. (Betreuer)
Master Thesis
2020Piezoelectric Response of Polycrystalline Silicon-Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles
Mart, Clemens; Kämpfe, Thomas; Hoffmann, Raik; Eßlinger, Sophia; Kirbach, Sven; Kühnel, Kati; Czernohorsky, Malte; Eng, Lukas M.; Weinreich, Wenke
Zeitschriftenaufsatz
2019Antiferroelektrische, eingebettete Dünnschichtkondensatoren als Energiespeicher für autarke Sensorelemente
Czernohorsky, Malte; Weder, Andreas; Mart, Clemens; Falidas, K.; Kühnel, K.; Viegas, A.E.; Holland, H.-J.; Weinreich, W.
Konferenzbeitrag
2019Doping hafnium oxide by in-situ precursor mixing
Weinreich, Wenke; Mart, Clemens; Kühnel, Kati; Kämpfe, Thomas; Czernohorsky, Malte
Vortrag
2019Electrocaloric temperature change in ferroelectric Si-doped hafnium oxide (HfO2) thin films
Mart, Clemens; Kämpfe, Thomas; Müller, Johannes; Pätzold, Björn; Rudolph, Matthias; Czernohorsky, Malte; Weinreich, Wenke
Vortrag
2018Aspects of high aspect ratio silicon etching - capacitor application
Rudolph, Matthias; Pätzold, Björn; Czernohorsky, Malte
Vortrag
2018CMOS compatible pyroelectric applications enabled by doped HfO2 films on deep-trench structures
Mart, Clemens; Weinreich, Wenke; Czernohorsky, Malte; Riedel, Stefan; Zybell, Sabine; Kühnel, Kati
Konferenzbeitrag
2018Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films
Mart, Clemens; Czernohorsky, Malte; Zybell, Sabine; Kämpfe, Thomas; Weinreich, Wenke
Zeitschriftenaufsatz
2017Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3
Mart, Clemens; Zybell, Sabine; Riedel, Stefan; Czernohorsky, Malte; Seidel, Konrad; Weinreich, Wenke
Zeitschriftenaufsatz
2016Catalytic ALD of SiO2 as spacer for an E-Beam direct write self-aligned double patterning process on 300 mm wafers
Kühnel, Kati; Riedel, Stefan; Weinreich, Wenke; Thrun, Xaver; Czernohorsky, Malte; Pätzold, Björn; Rudolph, Matthias
Vortrag
2016Characterization of low temperature plasma generated oxides on germanium based substrates
Poduval, Geedhika Kallidil
: Czernohorsky, Malte (Betreuer); Lakner, Hubert (Gutachter); Fischer, Wolf-Joachim (Gutachter)
Master Thesis
2012Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon
Paul, Jan; Riedel, Stefan; Rudolph, Matthias; Wege, Stephan; Czernohorsky, Malte; Sundqvist, Jonas; Hohle, Christoph; Beyer, Volkhard
Zeitschriftenaufsatz
2010Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
Beug, M. Florian; Melde, Thomas; Czernohorsky, Malte; Hoffmann, Raik; Paul, Jan; Knöfler, Roman; Tilke, Armin T.
Zeitschriftenaufsatz
2010Formation of an interface layer between Al1-xSixOy thin films and the Si substrate during rapid thermal annealing
Michalowski, Pawel Piotr; Beyer, Volkhard; Czernohorsky, Malte; Kücher, P.; Teichert, Steffen; Jaschke, Gert; Möller, Wolfhard
Zeitschriftenaufsatz
2010Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas
Konferenzbeitrag
2009Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard
Konferenzbeitrag
2009Characterization of the diffusium process in Al2O3 thin films based on ToF-SIMS measurements
Michalowski, Pawel Piotr; Czernohorsky, Malte; Beyer, Volkhard; Jaschke, Gert; Teichert, Steffen
Zeitschriftenaufsatz
2009Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T.
Konferenzbeitrag
2009Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas
Zeitschriftenaufsatz
2009TaN metal gate damage during high-k (Al2O3) high-temperature etch
Paul, Jan; Beyer, Volkhard; Michalowski, Pawel Piotr; Beug, M. Florian; Bach, Lars; Ackermann, Marco; Wege, S.; Tilke, Armin T.; Chan, N.; Mikolajick, Thomas; Bewersdorff-Sarlette, Ulrike; Knöfler, Roman; Czernohorsky, Malte; Ludwig, C.
Konferenzbeitrag

 

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