
Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. | | |
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1984 | Germanium extremely heavily doped by Ion-implantation and laser annealing - A photoluminescence study Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J. | Konferenzbeitrag |
1984 | Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M. | Konferenzbeitrag |
1983 | Absorption edge of ultraheavily doped Si Axmann, A.; Vina, L.; Umbach, C.; Cardona, M.; Compaan, A. | Zeitschriftenaufsatz |
1983 | The E1 - E1 + Delta 1 transitions in bulk grown and in implanted laser annealed heavily doped germanium - lumninescence Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J. | Zeitschriftenaufsatz |
1983 | The electronic structure of heavily doped ion implanted laser annealed silicon - ellipsometric measurements Axmann, A.; Vina, L.; Umbach, C.; Compaan, A.; Cardona, M. | Zeitschriftenaufsatz |
1983 | Phonon softening in ultra heavily doped Si and Ge. Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G. | Zeitschriftenaufsatz |
1983 | Photoluminescence in heavily doped Si and Ge Axmann, A.; Compaan, A.; Wagner, J. | Zeitschriftenaufsatz |
1983 | Raman studies of the P local mode vibration in P implanted, laser annealed Ge. Axmann, A.; Contreras, G.; Compaan, A. | Zeitschriftenaufsatz |