Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Carrubba, Vincenzo; Quay, Rüdiger
Konferenzbeitrag
2018X-band GaN high power amplifier with integrated power switch for airborne applications
Pereira, A.; Al-Sarawi, S.; Weste, N.; Abbott, D.; Kuhn, J.; Carrubba, V.; Quay, R.
Konferenzbeitrag
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Zeitschriftenaufsatz
2014Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies
Maier. T.; Carrubba, V.; Quay, R.; Raay, F. van; Ambacher, O.
Konferenzbeitrag
2014Analysis and performance of drain bias "in-dependent" class-J power amplifier
Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2014Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
Zeitschriftenaufsatz
2014Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O.
Konferenzbeitrag
2014X-band high-efficiency GaAs MMIC PA
Pereira, A.; Parker, A.; Heimlich, M.; Weste, N.; Quay, R.; Carrubba, V.
Konferenzbeitrag
2013Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2013Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2013Simple and low-cost tracking generator design in envelope tracking radio frequency power amplifier system for WCDMA applications
Yusoff, Z.; Lees, J.; Chaudhary, M.A.; Carrubba, V.; Choi, H.; Tasker, P.; Cripps, S.C.
Zeitschriftenaufsatz
2012The continuous inverse class-F mode with resistive second-harmonic impedance
Carrubba, V.; Akmal, M.; Quay, R.; Lees, J.; Benedikt, J.; Cripps, S.C.; Tasker, P.J.
Zeitschriftenaufsatz
2012Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2011Inverse class-FJ: Experimental validation of a new PA voltage waveform family
Carrubba, V.; Bell, J.J.; Smith, R.M.; Akmal, M.; Yusoff, Z.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Konferenzbeitrag