Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Electro-optical characterization of IC compatible microcantilevers
Pérez-Campos, A.; Iriarte, G.F.; Lebedev, V.; Calle, F.
Zeitschriftenaufsatz
2014PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers
Pérez-Campos, A.; Iriarte, G.F.; Lebedev, V.; Calle, F.
Zeitschriftenaufsatz
2013Application of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier
Cucak, D.; Vasic, M.; Garcia, O.; Oliver, J.; Alou, P.; Cobos, J.A.; Tadjer, M.; Calle, F.; Benkhelifa, F.; Reiner, R.; Waltereit, P.; Müller, S.
Konferenzbeitrag
2013High precision pressure sensors based on SAW devices in the GHz range
Rodríguez-Madrid, J.G.; Iriarte, G.F.; Williams, O.A.; Calle, F.
Zeitschriftenaufsatz
2012Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
Rodríguez-Madrid, J.G.; Iriarte, G.F.; Araujo, D.; Villar, M.P.; Williams, O.A.; Müller-Sebert, W.; Calle, F.
Zeitschriftenaufsatz
2012Super-high-frequency SAW resonators on AlN/diamond
Rodriguez-Madrid, J.G.; Iriarote, G.F.; Pedros, J.; Williams, O.A.; Brink, D.; Calle, F.
Zeitschriftenaufsatz
2011Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
Iriarte, G.F.; Rodríguez, J.G.; Ro, R.; Lee, R.; Williams, O.A.; Araujo, D.; Villar, M.P.; Calle, F.
Konferenzbeitrag
2011Sputter optimization of AlN on diamond substrates for high frequency SAW resonators
Rodríguez, J.G.; Iriarte, G.F.; Calle, F.; Araujo, D.; Villar, M.P.; Williams, O.A.
Konferenzbeitrag
2009Nanocrystalline diamond microelectromechanical resonators
Sillero, E.; Williams, O.A.; Lebedev, V.; Cimalla, V.; Röhlig, C.-C.; Nebel, C.E.; Calle, F.
Konferenzbeitrag
2009Piezoelectrically actuated AlN and Nanodiamond microstructures
Knöbber, F.; Sillero, E.; Röhlig, C.-C.; Williams, O.A.; Sah, R.E.; Kirste, L.; Cimalla, V.; Nebel, C.E.; Calle, F.; Lebedev, V.
Konferenzbeitrag
2009Static and dynamic determination of the mechanical properties of nanocrystalline diamond micromachined structures
Sillero, E.; Williams, O.A.; Lebedev, V.; Cimalla, V.; Röhlig, C.-C.; Nebel, C.E.; Calle, F.
Zeitschriftenaufsatz
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Zeitschriftenaufsatz
1994Incorporation of Be into InxGa1-xAs /0.004 equal or smaller than x equal or smaller than 0.17/ studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes.
Alvarez, A.L.; Wagner, J.; Calle, F.; Maier, M.; Gutierrez, G.; Sacedon, A.; Calleja, E.; Munoz, E.
Zeitschriftenaufsatz
1994Influence of In on Si local vibrational modes in InxGa1-xAs -0 equal or smaller than x equal or smaller than 0.12-
Alvarez, A.L.; Calle, F.; Wagner, A.; Sacedon, A.; Maier, M.; Fernandez de Avila, S.; Calleja, E.; Munoz, E.; Lourenco, M.A.
Zeitschriftenaufsatz