Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T.
Konferenzbeitrag
2016Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2016Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias
Zeitschriftenaufsatz
2016A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact
Burenkov, Alex; Lorenz, Juergen
Konferenzbeitrag
2016Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Konferenzbeitrag
2016Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Konferenzbeitrag
2016Simulation of silicon-dot-based single-electron memory devices
Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen
Konferenzbeitrag
2016Simulation of thermo-mechanical effect in bulk-silicon FinFETs
Burenkov, Alex; Lorenz, Jürgen
Zeitschriftenaufsatz, Konferenzbeitrag
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Zeitschriftenaufsatz
2015Hierarchical variability-aware compact models of 20nm bulk CMOS
Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.
Konferenzbeitrag
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Zeitschriftenaufsatz
2015Numerical evaluation of the ITRS transistor scaling
Nagy, R.; Burenkov, A.; Lorenz, J.
Zeitschriftenaufsatz
2015Simulation of plasma immersion ion implantation into silicon
Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.
Konferenzbeitrag
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Zeitschriftenaufsatz
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Konferenzbeitrag
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Konferenzbeitrag
2014Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.
Zeitschriftenaufsatz, Konferenzbeitrag
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Zeitschriftenaufsatz, Konferenzbeitrag
2014Simulation for statistical variability in realistic 20nm MOSFET
Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.
Konferenzbeitrag
2014Simulation of AsH3 plasma immersion ion implantation into silicon
Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank
Konferenzbeitrag
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Konferenzbeitrag
2014Strahlungsquelle und Verfahren zu deren Betrieb
Burenkov, Alexander
Patent
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2014Thermal properties of interconnects in power MOSFETs
Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian
Konferenzbeitrag
2014Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Konferenzbeitrag
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Konferenzbeitrag
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Konferenzbeitrag
2013Double patterning: Simulating a variability challenge for advanced transistors
Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2013Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Konferenzbeitrag
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Konferenzbeitrag
2013On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Konferenzbeitrag
2013Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015
Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2013Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen
Konferenzbeitrag
2013Tunnel field-effect transistors with graphene channels
Svintsov, D.A.; Vyurkov, V.V.; Lukichev, V.F.; Orlikovsky, A.A.; Burenkov, A.; Oechsner, R.
Zeitschriftenaufsatz
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Konferenzbeitrag
2012Angular distributions of sputtered silicon at grazing gallium ion beam incidence
Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner
Zeitschriftenaufsatz, Konferenzbeitrag
2012BF3 PIII modeling: Implantation, amorphisation and diffusion
Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.
Konferenzbeitrag
2012Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Konferenzbeitrag
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2012Simulation of BF3 plasma immersion ion implantation into silicon
Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.
Konferenzbeitrag
2012Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred
Patent
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Vortrag
2011Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
2011Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Roll, G.; Jakschik, S.; Burenkov, A.; Goldbach, M.; Mikolajick, T.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Konferenzbeitrag
20102D Angular distributions of ion sputtered germanium atoms under grazing incidence
Sekowski, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Konferenzbeitrag
2010FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Konferenzbeitrag
2010Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2009Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.
Konferenzbeitrag
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008All-quantum simulation of an ultra-small SOI MOSFET
Vyurkov, V.; Semenikhin, I.; Lukichev, V.; Burenkov, A.; Orlikovsky, A.
Konferenzbeitrag
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles
Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.
Konferenzbeitrag
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Zeitschriftenaufsatz
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Konferenzbeitrag
2008A simulation study on the impact of lithographic process variations on CMOS device performance
Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.
Konferenzbeitrag
2008Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes
Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.
Konferenzbeitrag, Zeitschriftenaufsatz
2007Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Abstract
2006Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.
Konferenzbeitrag
2006Verbindungsnetzwerk zwischen Halbleiterstrukturen
Burenkov, A.
Patent
2005Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
20043D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2004Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2004Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
2003Corner effect in double and triple gate FinFETs
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2003Figures of merit for CMOS switching speed
Burenkov, A.; Gund, C.; Lorenz, J.
Konferenzbeitrag
2003On the role of corner effect in FinFETs
Lorenz, J.; Burenkov, A.
Konferenzbeitrag
2002Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2001Compact modelling of process related effects on electrical behaviour of CMOS transistors
Burenkov, A.; Zhou, X.
Konferenzbeitrag
2001On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets
Burenkov, A.; Mu, Y.; Ryssel, H.
Konferenzbeitrag
2000Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.
Zeitschriftenaufsatz
2000Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.
Zeitschriftenaufsatz
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Konferenzbeitrag
2000Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J.
Zeitschriftenaufsatz
2000Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1999Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
1999Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1998Coupled 3D process and device simulation of advanced MOSFETs
Tietzel, K.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
1998Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon
Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.
Zeitschriftenaufsatz
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
1998Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Distortion of SIMS profiles due to ion beam mixing
Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.
Konferenzbeitrag
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Konferenzbeitrag
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1997Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology
Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.
Konferenzbeitrag
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
1996Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.
Aufsatz in Buch
1996Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte
Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.
Aufsatz in Buch
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
19953D simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Konferenzbeitrag
1995Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1995Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1995Three-dimensional simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Aufsatz in Buch
1995Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz