Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999A general approach to disassembly planning and control
Seliger, G.; Perlewitz, H.; Wiendahl, H.-P.; Bürkner, S.
Zeitschriftenaufsatz
1998Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.
Zeitschriftenaufsatz
1998GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties
Pletschen, W.; Bachem, K.H.; Chertouk, M.; Bürkner, S.; Braunstein, J.
Konferenzbeitrag
1997Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J.
Konferenzbeitrag
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Zeitschriftenaufsatz
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Zeitschriftenaufsatz
1995Interdiffusion von GaAs/AlGaAs- und pseudomorphen InGaAs/GaAs-Halbleiterheterostrukturen für optoelektronische Anwendungen
Bürkner, S.
Dissertation
1995Process parameter dependence of Imurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multible quantum wells
Bürkner, S.; Maier, M.; Larkins, E.C.; Rothemund, W.; O'Reilly, E.P.; Ralston, J.D.
Zeitschriftenaufsatz
1995Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J.
Zeitschriftenaufsatz
1994Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D.
Konferenzbeitrag
1994Ion-channeling studies of InyGa1-yAs/GaAs strained-layer single and multiple quantum-well structures
Flemig, G.W.; Brenn, R.; Larkins, E.C.; Bürkner, S.; Bender, G.; Baeumler, M.; Ralston, J.D.
Zeitschriftenaufsatz
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994Partial interdiffusion of InGaAs/GaAs MQW modulators for photonic integration
Humbach, O.; Soyka, R.; Stöhr, A.; Bürkner, S.; Ralston, J.D.; Larkins, E.C.; Jäger, D.
Konferenzbeitrag