Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh
Konferenzbeitrag
2019Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications
Samis, Stanislav; Friesicke, Christian; Feuerschüz, Philip; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, A.F.
Konferenzbeitrag
2018A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power
Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger
Konferenzbeitrag
2018Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger
Konferenzbeitrag
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Konferenzbeitrag
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Zeitschriftenaufsatz
2018Investigation of processing modules to establish a mm-wave foundry process for space applications
Brueckner, Peter; Dammann, Michael; Quay, Rüdiger
Konferenzbeitrag
2018Low-frequency dispersion and state dependency in modern microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael
Konferenzbeitrag
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Konferenzbeitrag
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.
Konferenzbeitrag
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Zeitschriftenaufsatz
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Konferenzbeitrag
2017Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick
Konferenzbeitrag
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Zeitschriftenaufsatz