Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Optical constants and band gap of wurtzite Al₁₋ₓScₓN/Al₂O₃ prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
Baeumler, Martina; Lu, Yuan; Kurz, Nicolas; Kirste, Lutz; Prescher, Mario; Christoph, Tim; Wagner, Joachim; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Zeitschriftenaufsatz
2018Inter-correlation among the hydrophilic-lipophilic balance, surfactant system, viscosity, particle size, and stability of candelilla wax-based dispersions
Lindner, Martina; Bäumler, Magdalena; Stäbler, Andreas
Zeitschriftenaufsatz
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Migration zur intelligenten Produktion
Gutjahr, Jonas; Bogner, Eva; Bäumler, Markus
Zeitschriftenaufsatz
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Zeitschriftenaufsatz
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Zeitschriftenaufsatz
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Konferenzbeitrag
2014Densification of thin aluminum oxide films by thermal treatments
Cimalla, V.; Baeumler, M.; Kirste, L.; Prescher, M.; Christian, B.; Passow, T.; Benkhelifa, F.; Bernhardt, F.; Eichapfel, G.; Himmerlich, M.; Krischok, S.; Pezoldt, J.
Zeitschriftenaufsatz
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Konferenzbeitrag
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2013Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
Sah, R.E.; Tegenkamp, C.; Baeumler, M.; Bernhardt, F.; Driad, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2012Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2012Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Konferenzbeitrag
2012Near-field characteristics of broad area diode lasers during catastrophic optical damage failure
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Konferenzbeitrag
2012Near-field evolution in strongly pumped broad area diode lasers
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Konferenzbeitrag
2012Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Zeitschriftenaufsatz
2012Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2012Static and dynamic characterization of AlN and nanocrystalline diamond membranes
Knöbber, F.; Zürbig, V.; Heidrich, N.; Hees, J.; Sah, R.E.; Baeumler, M.; Leopold, S.; Pätz, D.; Ambacher, O.; Lebedev, V.
Zeitschriftenaufsatz
2011Absorption and emission properties of light emitting diode structures containing GaInN/GaN QWs
Binder, J.; Korona, K.P.; Borysiuk, J.; Wysmolek, A.; Baeumler, M.; Köhler, K.; Kirste, L.
Zeitschriftenaufsatz
2011Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2011Near-field dynamics of broad area diode laser at very high pump levels
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.
Zeitschriftenaufsatz
2011Next generation 8xx nm laser bars and single emitters
Strauss, U.; Müller, M.; Swietlik, T.; Fehse, R.; Lauer, C.; Grönninger, G.; König, H.; Keidler, M.; Fillardet, T.; Kohl, A.; Stoiber, M.; Scholl, I.; Biesenbach, J.; Baeumler, M.; Konstanzer, H.
Konferenzbeitrag
2011Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Konferenzbeitrag
2011Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B.
Zeitschriftenaufsatz
2010Diamond/AlN thin films for optical applications
Knöbber, F.; Bludau, O.; Williams, O.A.; Sah, R.E.; Kirste, L.; Baeumler, M.; Leopold, S.; Pätz, D.; Nebel, C.E.; Ambacher, O.; Cimalla, V.; Lebedev, V.
Konferenzbeitrag
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Zeitschriftenaufsatz
2010Investigation of stress in AIN thin films for piezoelectric MEMS
Sah, R.E.; Kirste, Lutz; Baeumler, Martina; Hiesinger, P.; Cimalla, Volker; Lebedev, Vadim; Knöbber, F.; Bludau, O.; Röhlig, C.-C.; Baumann, H.
Konferenzbeitrag
2010Optical investigation of the BGaP/GaP/Si material system
Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W.
Konferenzbeitrag
2010Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
Sah, R.E.; Kirste, L.; Baeumler, M.; Hiesinger, P.; Cimalla, V.; Lebedev, V.; Baumann, H.; Zschau, H.-E.
Zeitschriftenaufsatz
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2009Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)
Knübel, A.; Aidam, R.; Cimalla, V.; Kirste, L.; Baeumler, M.; Leancu, C.-C.; Lebedev, V.; Wallauer, J.; Walther, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2008Spatial variations of carrier and defect concentration in VGF GaAs:Si
Baeumler, M.; Boerner, F.; Kretzer, U.; Scheffer-Czygan, M.; Bünger, T.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2007Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2007Laser facet inspection by imaging techniques
Bull, S.; Larksins, E.C.; Baeumler, M.; Jimenez, J.
Aufsatz in Buch
2007Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J.
Zeitschriftenaufsatz
2005Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry
Baeumler, M.; Müller, S.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Zeitschriftenaufsatz
2003Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates
Baeumler, M.; Diwo, E.; Jantz, W.; Sahr, U.; Müller, G.; Grant, I.
Konferenzbeitrag
2003Photoluminescence Imaging
Baeumler, M.; Jantz, W.
Aufsatz in Buch
20022K PL topography of silicon doped VGf-GaAs wafers
Baeumler, M.; Maier, M.; Herres, N.; Bünger, T.; Stenzenberger, J.; Jantz, W.
Zeitschriftenaufsatz
2002Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Malyarchuk, V.; Tomm, J.; Lienau, C.; Rinner, F.; Baeumler, M.
Zeitschriftenaufsatz
2002Photoluminescence topography of sulfur doped 2'' InP grown by the vertical gradient freeze technique
Sahr, U.; Mueller, G.; Grant, I.; Baeumler, M.; Jantz, W.
Konferenzbeitrag
2002Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs
Steinegger, T.; Gründig-Wendrock, B.; Baeumler, M.; Jurisch, M.; Jantz, W.; Niklas, J.
Zeitschriftenaufsatz
2000Facet degradation of high-power diode laser arrays
Tomm, J.W.; Thamm, E.; Bärwolff, A.; Elsässer, T.; Luft, J.; Baeumler, M.; Müller, S.; Jantz, W.; Rechenberg, I.
Zeitschriftenaufsatz
2000Quantitative topographic assessment of Cu incorporation in GaAs
Baeumler, M.; Stibal, R.; Stolz, W.; Steinegger, T.; Jurisch, M.; Maier, M.; Jantz, W.
Zeitschriftenaufsatz
1999Luminescence imaging - a well-established technique to study material- and device-related problems
Baeumler, M.; Fitz, C.,; Weinberg, U.; Wagner, J.; Jantz, W.
Zeitschriftenaufsatz
1999Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers
Frigeri, C.; Baeumler, M.; Migliori, A.; Weyher, J.L.; Jantz, W.
Zeitschriftenaufsatz
1998Cross-sectional TEM study of degraded high power diode lasers
Frigeri, C.; Weyher, J.L.; Baeumler, M.; Müller, S.; Jantz, W.; Luft, J.; Herrmann, G.; Späth, W.
Konferenzbeitrag
1998Investigation of degraded laser diodes by chemical preparation and luminescence microscopy
Baeumler, M.; Weyher, J.L.; Müller, S.; Jantz, W.; Stibal, R.; Herrmann, G.; Luft, J.; Sporrer, K.; Späth, W.
Konferenzbeitrag
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Zeitschriftenaufsatz
1996Influence of multi wafer annealing of LEC GaAs substrates on the quality of epitaxial layers
Forker, J.; Baeumler, M.; Weyher, J.L.; Jantz, W.; Bernklau, D.; Riechert, H.; Inoue, T.
Konferenzbeitrag
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Zeitschriftenaufsatz
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Zeitschriftenaufsatz
1994Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D.
Konferenzbeitrag
1994Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography
Baeumler, M.; Larkins, E.C.; Bachem, K.H.; Bernklau, D.; Riechert, H.; Ralston, J.D.; Jantz, W.
Konferenzbeitrag
1994Ion-channeling studies of InyGa1-yAs/GaAs strained-layer single and multiple quantum-well structures
Flemig, G.W.; Brenn, R.; Larkins, E.C.; Bürkner, S.; Bender, G.; Baeumler, M.; Ralston, J.D.
Zeitschriftenaufsatz
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Konferenzbeitrag
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Konferenzbeitrag
1993Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Zeitschriftenaufsatz
1992EPR observation of a deep center with Ap1 electron configuration in GaAs.
Kaufmann, U.; Baeumler, M.; Hendorfer, G.
Zeitschriftenaufsatz
1992Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb
Omling, P.; Hofmann, D.M.; Baeumler, M.; Kaufmann, U.; Kunzer, M.
Zeitschriftenaufsatz
1992Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Konferenzbeitrag
1992Renormalization of the one-dimensional pi-pi band gap on the Ge -111- 2x1 surface.
Haight, R.; Baeumler, M.
Zeitschriftenaufsatz
1992Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission.
Haight, R.; Baeumler, M.; Silberman, J.A.; Kirchner, P.D.
Zeitschriftenaufsatz
1992Ultrafast-electron dynamics and recombination on the Ge(111)(2x1) pi-bonded surface
Haight, R.; Baeumler, M.
Zeitschriftenaufsatz
1990Punktdefekte in semiisolierendem GaAs
Baeumler, M.
Dissertation
1990The role of deep acceptors for the compensation of undoped SI GaAs
Baeumler, M.; Mooney, P.; Kaufmann, U.; Wagner, J.
Konferenzbeitrag
1989Determination of the FR3 acceptor level by direct excitation of the FR3 EPR in undoped semiinsulating GaAs.
Baeumler, M.; Mooney, P.M.; Kaufmann, U.
Zeitschriftenaufsatz
1989Electron parametric resonance identification of the SbGa heteroantisite defect in GaAs:Sb
Baeumler, M.; Schneider, J.; Mitchel, W.C.; Yu, P.W.; Kaufmann, U.
Zeitschriftenaufsatz
1989Magnetic circular dichroism investigation on the neutral and the ionized manganese acceptor in GaAs.
Baeumler, M.; Schneider, J.; Kaufmann, U.; Meyer, B.
Zeitschriftenaufsatz
1989Optical properties of the SbGa heteroantisite defect in GaAs:Sb
Baeumler, M.; Fuchs, F.; Kaufmann, U.
Zeitschriftenaufsatz
1987Electron spin resonance of erbium in gallium arsenide
Baeumler, M.; Schneider, J.; Köhl, F.; Tomzig, E.
Zeitschriftenaufsatz
1987Electronic structure of the neutral manganese acceptor in gallium arsenide
Schneider, J.; Wilkening, W.; Baeumler, M.; Köhl, F.; Kaufmann, U.
Zeitschriftenaufsatz
1987Photoresponse of the FR3 electron-spin-resonance signal in GaAs
Wilkening, W.; Baeumler, M.; Kaufmann, U.
Zeitschriftenaufsatz
1986Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J.
Buch
1986New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Zeitschriftenaufsatz
1986New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Aufsatz in Buch
1986Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1985Near infrared transmission imagign of spatial inhomogeneities in GaAs slices. A comparative study of different techniques
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1985New quantitative line scanning technique for homogeneity assessment of semi-insulating GaAs wafers
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Zeitschriftenaufsatz
1985Photo-EPR and spatially resolved EPR of AsBa in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag
1985Photoresponse of the As tief Ga antisite defect in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Zeitschriftenaufsatz
1984Concentration and thermal stability of As tief Ga in GaAs - Correlation with EL2
Baeumler, M.; Schneider, J.; Koehl, F.; Kaufmann, U.; Windscheif, J.
Konferenzbeitrag