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2019 | Process variability - technological challenge and design issue for nanoscale devices Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping | Zeitschriftenaufsatz |
2018 | Autonomous circuit design of a resonant converter (LLC) for on-board chargers using genetic algorithms Rosskopf, A.; Volmering, S.; Ditze, S.; Joffe, C.; Bär, E. | Konferenzbeitrag |
2018 | The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning Baer, Eberhard; Lorenz, Juergen | Konferenzbeitrag |
2018 | Elektronik Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin | Aufsatz in Buch |
2018 | Modeling of block copolymer dry etching for directed self-assembly lithography Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas | Konferenzbeitrag |
2018 | Optimized 2D positioning of windings in inductive components by genetic algorithm Rosskopf, Andreas; Knoerzer, Karsten; Baer, Eberhard; Ehrlich, Stefan | Konferenzbeitrag |
2018 | Process variability for devices at and beyond the 7 nm node Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail | Konferenzbeitrag |
2018 | Process variability for devices at and beyond the 7 nm node Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail | Zeitschriftenaufsatz |
2016 | Calculation of power losses in litz wire systems by coupling FEM and PEEC method Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher; Bonse, Clemens | Zeitschriftenaufsatz |
2016 | Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Schneider, Richard; Bär, Eberhard; Schletz, Andreas | Konferenzbeitrag |
2016 | Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength Bayer, Christoph Friedrich; Waltrich, Uwe; Schneider, Richard; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas | Konferenzbeitrag |
2016 | Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation Baer, Eberhard; Niess, Juergen | Konferenzbeitrag |
2016 | Influence of varying bundle structures on power electronic systems simulated by a coupled approach of FEM and PEEC Rosskopf, A.; Schuster, S.; Endruschat, A.; Bär, E. | Konferenzbeitrag |
2016 | Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas | Konferenzbeitrag |
2016 | Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas | Zeitschriftenaufsatz |
2016 | Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen | Konferenzbeitrag |
2016 | Simulation of process variations in FinFET transistor patterning Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen | Konferenzbeitrag |
2016 | Stacking of insulating substrates and a field plate to increase the PDIV for high voltage power modules Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas | Konferenzbeitrag |
2016 | Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat Bayer, Christoph; Waltrich, Uwe; Schletz, Andreas; Bär, Eberhard; Meyer, Andreas | Patent |
2015 | Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried | Zeitschriftenaufsatz, Konferenzbeitrag |
2015 | Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method Montoliu, C.; Baer, Eberhard; Cerda, J.; Colom, R.J. | Zeitschriftenaufsatz |
2015 | Simulation of the electric field strength in the vicinity of metallization edges on dielectric substrates Bayer, Christoph; Bär, Eberhard; Waltrich, Uwe; Malipaard, Dirk; Schletz, Andreas | Zeitschriftenaufsatz |
2015 | Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick | Konferenzbeitrag |
2014 | Calculation of ohmic losses in litz wires by coupling analytical and numerical methods Roßkopf, Andreas; Joffe, Christopher; Bär, Eberhard | Konferenzbeitrag |
2014 | Challenges and opportunities for process modeling in the nanotechnology era Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P. | Zeitschriftenaufsatz |
2014 | Influence of inner skin- and proximity effects on conduction in litz wires Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher | Zeitschriftenaufsatz |
2014 | Simultaneous simulation of systematic and stochastic process variations Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David | Konferenzbeitrag |
2014 | Thermal properties of interconnects in power MOSFETs Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian | Konferenzbeitrag |
2014 | Three-dimensional simulation for the reliability and electrical performance of through-silicon vias Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried | Konferenzbeitrag |
2014 | Variability-aware compact model strategy for 20-nm bulk MOSFETs Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen | Konferenzbeitrag |
2012 | Correlation-aware analysis of the impact of process variations on circuit behavior Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian | Konferenzbeitrag |
2012 | Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
2011 | Hierarchical simulation of process variations and their impact on circuits and systems: Methodology Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S. | Zeitschriftenaufsatz |
2011 | Hierarchical simulation of process variations and their impact on circuits and systems: Results Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S. | Zeitschriftenaufsatz |
2011 | Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J. | Konferenzbeitrag |
2011 | Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen | Poster |
2010 | Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J. | Konferenzbeitrag |
2010 | Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe | Konferenzbeitrag |
2010 | Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD) Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J. | Konferenzbeitrag |
2010 | Impact of technological options for 22 nm SOI CMOS transistors on IC performance Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J. | Konferenzbeitrag |
2010 | Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M. | Zeitschriftenaufsatz, Konferenzbeitrag |
2008 | Application-driven simulation of nanoscaled CMOS transistors and circuits Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
2008 | Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon Kunder, D.; Baer, E. | Zeitschriftenaufsatz |
2006 | A fast development simulation algorithm for discrete resist models Schnattinger, T.; Bär, E.; Erdmann, A. | Konferenzbeitrag, Zeitschriftenaufsatz, Konferenzbeitrag |
2006 | Mesoscopic resist processing simulation in optical lithography Schnattinger, T.; Bär, E.; Erdmann, A. | Konferenzbeitrag |
2006 | Three-dimensional resist development simulation with discrete models Schnattinger, T.; Baer, E.; Erdmann, A. | Zeitschriftenaufsatz |
2005 | Comparison of different approaches for the simulation of topography evolution during lithography development Schnattinger, T.; Bär, E. | Konferenzbeitrag |
2004 | 3D feature-scale simulation of sputter etching with coupling to equipment simulation Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2004 | Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2004 | Polierverfahren in der Halbleiterfertigung Pfitzner, L.; Bär, E.; Frickinger, J.; Nguyen, H.; Nutsch, A. | Konferenzbeitrag |
2004 | Three-dimensional simulation of ionized metal plasma vapor deposition Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
2003 | Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2003 | Three-dimensional triangle-based simulation of etching processes and applications Lenhart, O.; Bär, E. | Zeitschriftenaufsatz |
2002 | Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
2002 | Three-dimensional triangle-based simulation of etching processes Lenhart, O.; Bär, E. | Konferenzbeitrag |
2000 | 3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
2000 | Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
2000 | Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1999 | Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J. | Konferenzbeitrag |
1998 | Dreidimensionale Simulation von Schichtabscheideprozessen in der Halbleitertechnologie Bär, E. | Dissertation |
1998 | Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1998 | Integrated three-dimensional topography simulation and its application to dual-damascene processing Bär, E.; Henke, W.; List, S.; Lorenz, J. | Konferenzbeitrag |
1998 | Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz |
1998 | Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | 3D simulation for sub-micron metallization Bär, E.; Lorenz, J.; Ryssel, H. | Zeitschriftenaufsatz, Konferenzbeitrag |
1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2 Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Integrated three-dimensional topography simulation of contact hole processing Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J. | Konferenzbeitrag |
1997 | The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
1997 | Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1997 | Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | 3-D simulation of LPCVD using segment-based topography discretization Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
1996 | 3D simulation of LPCVD using segment based topography discretization Bär, E.; Lorenz, J. | Zeitschriftenaufsatz |
1996 | Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K. | Aufsatz in Buch |
1996 | Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1996 | Three-dimensional simulation of low-pressure chemical vapour deposition Bär, E.; Lorenz, J.; Ryssel, H. | Konferenzbeitrag |
1995 | 3D simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M. | Konferenzbeitrag |
1995 | 3D simulation of tungsten low-pressure chemical vapor deposition in contact holes Bär, E.; Lorenz, J. | Konferenzbeitrag |
1995 | Three-dimensional simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M. | Aufsatz in Buch |
1994 | 3D Simulation of Low Pressure Chemical Vapor Deposition Bär, E.; Lorenz, J. | Konferenzbeitrag |
1990 | Acoustic emission during crystallization of polymers Galeski, A.; Piorkowska, E.; Koenczoel, L.; Baer, E. | Zeitschriftenaufsatz |
1987 | Acoustic emission during fracture of short glass fiber reinforced poly-vinyl chloride- Koenczoel, L.; Hiltner, A.; Baer, E. | Zeitschriftenaufsatz |
1987 | Acoustic emission during polymer crystallization Galeski, A.; Koenczoel, L.; Piorkowska, E.; Baer, E. | Zeitschriftenaufsatz |
1986 | Acoustic emission during slow crack growth in fiber reinforced polyvinylchloride Koenczoel, L.; Hiltner, A.; Baer, E. | Konferenzbeitrag |
1986 | Crazing and fracture in polystyrene studied by acoustic emission Koenczoel, L.; Hiltner, A.; Baer, E. | Zeitschriftenaufsatz |