Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
199410 Gbit/s all-optical clocked decision circuit using two-section semiconductor lasers
Weich, K.; Eggemann, R.; Hörer, J.; As, D.J.; Möhrle, M.; Patzak, E.
Zeitschriftenaufsatz
199418 GHz all-optical frequency locking and clock recovery using a self-pulsating two-section DFB-laser
Feiste, U.; As, D.J.; Ehrhardt, A.
Zeitschriftenaufsatz
19942.5-Gbit/s all-optical clocked decision and retiming circuit using bistable semiconductor lasers
Welch, K.; Horer, J.; As, D.J.; Eggemann, R.; Mohrle, M.; Patzak, E.
Konferenzbeitrag
19945 Gbit/s optical switching between two injection locked modes of a semiconductor laser
Weich, K.; Patzak, E.; Horer, I.; As, D.J.; Eggemann, R.; Mohrle, M.
Konferenzbeitrag
1994Injection locked laser as wavelength converter and optical regenerator up to 10 Gbit/s
Weich, K.; Horer, J.; Patzak, E.; As, D.J.; Eggemann, R.; Mohrle, M.
Konferenzbeitrag
1994Investigations on the stability of an all-optically extracted clock at 18 GHz using a selfpulsating DFB-laser
Feiste, U.; As, D.J.; Ehrhardt, A.; Mohrle, M.; Franke, D.
Konferenzbeitrag
1993All-optical clock extraction at 18 Gbit/s by a self-pulsating two-section DFB-laser
Ehrhardt, A.; As, D.J.; Feiste, U.
Konferenzbeitrag
1993Clock recovery based on a new type of selfpulsation in a 1.5 mu m two-section InGaAsP-InP DFB laser
As, D.J.; Eggemann, R.; Feiste, U.; Möhrle, M.; Patzak, E.; Weich, K.
Zeitschriftenaufsatz
1993Compositional analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by determination of film thickness.
Maier, M.; Köhler, K.; Höpner, A.; As, D.J.
Zeitschriftenaufsatz
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Zeitschriftenaufsatz
1993High frequency locking at 18 GHz in a self pulsating DFB laser
Sartorius, B.; Mohrle, M.; As, D.J.; Horer, J.; Venghaus, H.; Feiste, U.
Konferenzbeitrag
1993High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence
Wang, Z.M.; Windscheif, J.; As, D.J.; Jantz, W.
Zeitschriftenaufsatz
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Konferenzbeitrag
1992Compositional analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
Höpner, A.; As, D.J.; Köhler, K.; Maier, M.
Konferenzbeitrag
1992Determination of acceptor binding energies in ZnSe.
Hingerl, K.; Jantsch, W.; Juza, P.; Lang, M.; Sitter, H.; Lilja, J.; Pessa, M.; Rothemund, W.; As, D.J.
Zeitschriftenaufsatz
1992Low temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells.
As, D.J.; Korf, S.; Wang, Z.M.; Bachem, K.H.; Jantz, W.; Windscheif, J.
Konferenzbeitrag
1992Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy.
Wang, Z.M.; As, D.J.; Windscheif, J.; Bachem, K.H.; Jantz, W.
Zeitschriftenaufsatz
1991Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers.
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Zeitschriftenaufsatz
1991Carrier transport in HEMT's analyzed by high-field electroluminescence.
Zappe, H.P.; As, D.J.
Zeitschriftenaufsatz
1991Electrical and optical properties of As and Li doped ZnSe films.
Hingerl, K.; Lilja, J.; Toivonen, M.; Pessa, M.; Jantsch, W.; As, D.J.; Rothemund, W.; Juza, P.; Sitter, H.
Konferenzbeitrag
1991Electron temperature and lifetime mapping of photoexcited carrier in semiinsulating LEC GaAs substrates by photoluminescence
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Konferenzbeitrag
1991Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures
As, D.J.; Brandt, G.; Dischler, B.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Zeitschriftenaufsatz
1991Spectrum of hot-electron luminescence from high electron mobility transistors.
As, D.J.; Zappe, H.P.
Zeitschriftenaufsatz
1990Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.
As, D.J.; Rothemund, W.; Hingerl, K.; Sitter, H.
Zeitschriftenaufsatz
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Zeitschriftenaufsatz
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1990Mechanisms for the emission of visible light from GaAs field-effect transistors
As, D.J.; Zappe, H.P.
Zeitschriftenaufsatz