Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019AlGaN avalanche Schottky diodes with high Al-content
Watschke, Lars; Passow, Thorsten; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Leone, Stefano; Rehm, Robert; Ambacher, Oliver
Zeitschriftenaufsatz, Konferenzbeitrag
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Antimonidische Übergitter Infrarot-Photodioden mit reduziertem Dunkelstrom
Schmidt, Johannes
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2019Determination of the graphene-graphite ratio of graphene powder by Raman 2D band symmetry analysis
Roscher, Sarah; Hoffmann, René; Ambacher, Oliver
Zeitschriftenaufsatz
2019Development and characterization of piezoelectric AlScN-based alloys for electroacoustic applications
Lu, Yuan
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2019Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver
Konferenzbeitrag
2019A dielectric-filled cavity-backed lens-coupled dipole antenna at 100 GHz
Dyck, Alexander; Kuri, Michael; Rösch, Markus; Tessmann, Axel; Ambacher, Oliver
Konferenzbeitrag
2019Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2019Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
Lebedev, Vadim; Yoshikawa, Taro; Giese, Christian; Kirste, Lutz; Zukauskaite, Agne; Graff, Andreas; Meyer, Frank; Burmeister, Frank; Ambacher, Oliver
Zeitschriftenaufsatz
2019A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
2019GCPW GaAs broadside couplers at H-band and application to balanced power amplifiers
Amado-Rey, Ana Belén; Campos-Roca, Yolanda; Friesicke, Christian; Wagner, Sandrine; Ambacher, Oliver
Zeitschriftenaufsatz
2019Graphene - from Synthesis to the Application as a Virtually Massless Electrode Material for Bulk Acoustic Wave Resonators
Knapp, Marius David
: Ambacher, Oliver (Referent); Paul, Oliver (Referent)
Dissertation
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis
Yoshikawa, Taro; Herrling, David; Meyer, Frank; Burmeister, Frank; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim
Zeitschriftenaufsatz
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2019Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael
Zeitschriftenaufsatz, Konferenzbeitrag
2019Investigation of the use of MOSHEMT based amplifiers in direct receivers for radiometry applications
Bansal, Nikesh
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent)
Master Thesis
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2019Luminescence Properties of SiV-centers in diamond diodes
Tegetmeyer, Björn
: Ambacher, Oliver
Dissertation
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Modenverhalten von Quantenkaskadenlasern in miniaturisierten externen Resonatoren
Butschek, Lorenz
: Ambacher, Oliver; Buse, K.; Glunz, S.; Rohrbach, A.
Dissertation
2019Optical constants and band gap of wurtzite Al₁₋ₓScₓN/Al₂O₃ prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
Baeumler, Martina; Lu, Yuan; Kurz, Nicolas; Kirste, Lutz; Prescher, Mario; Christoph, Tim; Wagner, Joachim; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
2019RF-noise model extraction procedure for distributed multiport models
Heinz, Felix; Schwantuschke, Dirk; Ohlrogge, Matthias; Leuther, Arnulf; Ambacher, Oliver
Konferenzbeitrag
2019Transfer von AlGaN/GaN-Hochleistungstransistoren auf Diamant
Gerrer, Thomas
: Ambacher, Oliver (Referent); Woias, Peter
Dissertation
2019A transmitter system-in-package at 300 GHz with an off-chip antenna and GaAs-based MMICs
Dyck, Alexander; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Kuri, Michael; Wagner, Sandrine; Gashi, Bersant; Schäfer, Jochen; Ambacher, Oliver
Zeitschriftenaufsatz
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Konferenzbeitrag
2018A 300 GHz microstrip multilayered antenna on quartz substrate
Dyck, Alexander; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Kuri, Michael; Massler, Hermann; Wagner, Sandrine; Meder, Dirk; Weismann-Thaden, Birgit; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018AlN-based Electro-Acoustic Sensors for Analytics in Liquids
Reusch, Markus
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2018Analysis and development of submillimeter-wave stacked-FET power amplifier MMICs in 35-nm mHEMT technology
Amado-Rey, Ana Belén; Campos-Roca, Yolanda; Raay, Friedbert van; Friesicke, Christian; Wagner, Sandrine; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Zeitschriftenaufsatz
2018Analysis of 4-way divider MMICs in GaAs technology for H-band applications
Amado-Rey, Belén; Campos-Roca, Yolanda; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Konferenzbeitrag
2018Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
Amado Rey, Ana Belén
: Paul, Oliver; Ambacher, Oliver; Campos-Roca, Y.
Dissertation
2018Analysis, design, and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
Amado-Rey, Ana Belén
: Ambacher, Oliver (Referent); Campos-Roca, Yolanda (Referent)
Dissertation
2018Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver
Zeitschriftenaufsatz
2018Broadband high-power W-band amplifier MMICs based on stacked-HEMT unit cells
Thome, Fabian; Leuther, Arnulf; Schlechtweg, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
2018Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films
Kurz, Nicolas; Parsapour, Fazel; Pashchenko, Vladimir; Kirste, Lutz; Lebedev, Vadim; Pascal, Nicolay; Muralt, Paul; Ambacher, Oliver
Konferenzbeitrag
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin films
Lu, Yuan; Reusch, Markus; Kurz, Nicolas; Ding, Anli; Christoph, Tim; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Zeitschriftenaufsatz
2018Entwicklung piezoelektrisch adaptiver Aluminiumnitrid/Diamant-Linsen für mikrooptische Systeme
Knöbber, Fabian Andreas
: Ambacher, Oliver; Wallrabe, Ulrike
Dissertation
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018A G-band broadband balanced power amplifier module based on cascode mHEMTs
Amado-Rey, Belén; Campos-Roca, Yolanda; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Zeitschriftenaufsatz
2018GaN-based high electron mobility transistors with high Al-content barriers
Godejohann, Birte-Julia
: Paul, Oliver; Ambacher, Oliver; Fiederle, M.
Dissertation
2018Graphene as an active virtually massless top electrode for RF solidly mounted bulk acoustic wave (SMR-BAW) resonators
Knapp, Marius; Hoffmann, René; Lebedev, Vadim; Cimalla, Volker; Ambacher, Oliver
Zeitschriftenaufsatz
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
Thome, Fabian; Ambacher, Oliver
Zeitschriftenaufsatz
2018Infrarotspektroskopie mittels nichtlinear-optischer Hochkonversion
Wolf, Sebastian
: Buse, Karsten (Erstgutachter); Ambacher, Oliver (Zweitgutachter)
Dissertation
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2018Investigation of temperature characteristics and substrate influence on AlScN-based SAW resonators
Ding, Anli; Reusch, Markus; Lu, Yuan; Kurz, Nicolas; Lozar, Roger; Christoph, Tim; Driad, Rachid; Ambacher, Oliver; Zukauskaite, Agne
Konferenzbeitrag
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Zeitschriftenaufsatz
2018Luminescence properties of SiV-centers in diamond diodes
Tegetmeyer, Björn
: Ambacher, Oliver
Dissertation
2018Metallization design investigations for graphene as a virtually massless electrode material for 2.1 GHz solidly mounted (BAW-SMR) resonators
Knapp, Marius; Lebedev, Vadim; Cimalla, Volker; Ambacher, Oliver
Konferenzbeitrag
2018Modenverhalten von Quantenkaskadenlasern in miniaturisierten externen Resonatoren
Butschek, Lorenz
: Ambacher, Oliver (Referent); Buse, Karsten (Referent)
Dissertation
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018A novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Riemann-pump based RF-power DACs in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Spurious mode suppression in the design of GCPW submillimeter-wave power amplifiers
Amado-Rey, Belén; Tessmann, Axel; Campos-Roca, Yolanda; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Konferenzbeitrag
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018Temperature cross-sensitivity of AlN-based flexural plate wave sensors
Reusch, Markus; Holc, Katarzyna; Lebedev, Vadim; Kurz, Nicolas; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
2018Temperature dependence of the pyroelectric coefficient of AlScN thin films
Kurz, Nicolas; Lu, Yuan; Kirste, Lutz; Reusch, Markus; Zukauskaite, Agne; Lebedev, Vadim; Ambacher, Oliver
Zeitschriftenaufsatz
2018Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger
Zeitschriftenaufsatz, Konferenzbeitrag
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018W-Band FMCW MIMO radar demonstrator system for 3D imaging
Bleh, Daniela Karina
: Paul, Oliver; Ambacher, Oliver; Yang, Bin
Dissertation
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Konferenzbeitrag
2017Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Solowan, Hans-Michael
: Ambacher, Oliver (Ed.); Schwarz, U.T.; Wöllenstein, J.
Dissertation
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2017A contribution to active infrared laser spectroscopy for remote substance detection
Jarvis, Jan-Philip
: Beyerer, Juergen (Referent); Ambacher, Oliver
Dissertation
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer)
Dissertation
2017Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2017Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
Weiß, Beatrix
: Ambacher, Oliver (Betreuer); Makismović, Dragan (Betreuer)
Dissertation
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Flexural plate wave sensors with buried IDT for sensing in liquids
Reusch, Markus; Holc, Katarzyna; Zukauskaite, Agne; Lebedev, Vadim; Kurz, Nicolas; Ambacher, Oliver
Konferenzbeitrag
2017GaN-based Tri-gate high electron mobility transistors
Ture, Erdin
: Ambacher, Oliver (Referent); Bolognesi, Colombo R. (Referent); Palacios, Tomas (Referent)
Dissertation
2017Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer)
Master Thesis
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Nanodiamond resonators fabricated on 8'' Si substrates using adhesive wafer bonding
Lebedev, Vadim; Lisec, Thomas; Yoshikawa, Taro; Reusch, Markus; Iankov, Dimitre; Giese, Christian; Zukauskaite, Agne; Cimalla, Volker; Ambacher, Oliver
Zeitschriftenaufsatz
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Piezo-aktuierte mikro-opto-elektro-mechanische Systeme für aktive Mikrooptik
Zürbig, Verena
: Ambacher, Oliver (Referent); Lebedev, Vadim (Betreuer)
Dissertation
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Ambacher, Oliver (Referent); Schwierz, Frank (Referent)
Dissertation
2017Spectroscopic millimeter wave ellipsometry
Klenner, Mathias
: Ambacher, Oliver (Referent)
Dissertation
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Konferenzbeitrag
2017Toward ultra-thin nanocrystalline diamond film growth: Electrostatic self-assembly of non-aggregated diamond nanoparticles onto substrate surfaces
Yoshikawa, Taro
: Ambacher, Oliver; Fiederle, Michael
Dissertation
2017Untersuchung des Hochfrequenzrauschens von InGaAs-Transistoren
Heinz, Felix
: Ambacher, Oliver (Referent); Schwantuschke, Dirk (Betreuer)
Master Thesis
2017W-Band FMCW MIMO radar demonstrator system for 3D imaging
Bleh, Daniela
: Ambacher, Oliver (Referent); Yang, Bin (Referent)
Dissertation
2017W-Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging
Bleh, Daniela; Rösch, Markus; Kuri, Michael; Dyck, Alexander; Tessmann, Axel; Leuther, Arnulf; Wagner, Sandrine; Weismann-Thaden, Birgit; Stulz, Hans-Peter; Zink, Martin; Rießle, Markus; Sommer, R.; Wilcke, J.; Schlechtweg, Michael; Yang, B.; Ambacher, Oliver
Zeitschriftenaufsatz
2017Wettability investigations and wet transfer enhancement of large-area CVD-graphene on aluminum nitride
Knapp, Marius; Hoffmann, René; Cimalla, Volker; Ambacher, Oliver
Zeitschriftenaufsatz
2016Charakterisierung und Modellierung von metamorphen HEMT Strukturen im Millimeter- und Submillimeter-Wellenlängenbereich
Ohlrogge, Matthias
: Ambacher, Oliver
Dissertation
2016Electrostatic self-assembly of diamond nanoparticles onto Al- and N-Polar sputtered aluminum nitride surfaces
Yoshikawa, Taro; Reusch, Markus; Zürbig, Verena; Cimalla, Volker; Lee, K.-H.; Kurzyp, M.; Arnault, J.-C.; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim
Zeitschriftenaufsatz
2016Kontaktlose Mikroschalter auf der Basis von Dünnschichten aus Aluminiumnitrid und nanokristallinem Diamant
Lang, Nicola
: Ambacher, Oliver
Dissertation
2016Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Schwantuschke, Dirk
: Kallfass, I. (Betreuer); Ambacher, Oliver (Hrsg.)
Dissertation
2016A portable W-band radar system for enhancement of infrared vision in fire fighting operations
Klenner, Mathias; Zech, Christian; Hülsmann, Axel; Kühn, Jutta; Schlechtweg, Michael; Hahmann, Konstantin; Kleiner, Bernhard; Ulrich, Michael; Ambacher, Oliver
Konferenzbeitrag
2016Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.)
Tagungsband
2015Broadband Transceiver Circuits for Millimeter-Wave Wireless Communication
Lopez-Diaz, Daniel
: Ambacher, Oliver (Ed.); Kallfass, I. (Betreuer)
Dissertation
2015Reliability studies of GaN high electron mobility transistors
Cäsar, Markus
: Ambacher, Oliver
Dissertation
2014InAs/GaSb-Infrarotdetektoren mit reduziertem Dunkelstrom
Masur, Jan-Michael
: Ambacher, Oliver
Dissertation
2014Optische Polarisationsabhängigkeit semipolarer und nonpolarer InGaN-Quantenfilme und ihre Ladungsträgerstatistik
Schade, Lukas
: Ambacher, Oliver (Ed.)
Dissertation
2014Verbesserung der Abbildungsqualität blauer Projektionslichtquellen
Kopp, Fabian
: Ambacher, Oliver
Dissertation
2013All-diamond nanoelectrode arrays
Hees, Jan Jakob
: Ambacher, Oliver
Dissertation
2013Local charge carrier diffusion and recombination in InGaN quantum wells
Danhof, Julia
: Ambacher, Oliver (Ed.)
Dissertation
2013Towards the solid protein surface
Hoffmann, René
: Ambacher, Oliver (Ed.)
Dissertation
2012Diamond diversity - from micro- and nanostructuring to multifunctional tools and devices
Smirnov, W.
: Ambacher, Oliver
Dissertation
2012Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Maroldt, Stephan
: Ambacher, Oliver
Dissertation
2012Konzeption und Charakterisierung von Rippenwellenleiterlasern auf Si-Substrat basierend auf dem gitterangepassten Ga(NAsP)/(B)GaP-Materialsystem
Rogowsky, Stephan
: Ambacher, Oliver
Dissertation