Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh
Zeitschriftenaufsatz
2020Extreme temperature modeling of AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh
Zeitschriftenaufsatz
2020Physics-oriented device model for packaged GaN devices
Mahajan, Dhawal; Albahrani, Sayed Ali; Sodhi, Raj; Eguchi, Takashi; Khandelwal, Sourabh
Zeitschriftenaufsatz
2020Validation of the Industry-Standard ASM-GaN Model for Gate-Length Scaling
Albahrani, Sayed Ali; Hodges, Jason; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh
Konferenzbeitrag
2019A computationally efficient modelling methodology for field-plates in GaN HEMTs
Hodges, Jason; Albahrani, Sayed Ali; Khandelwal, Sourabh
Konferenzbeitrag
2019Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh
Zeitschriftenaufsatz
2019Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs
Hodges, Jason; Albahrani, Sayed Ali; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Khandelwal, Sourabh
Zeitschriftenaufsatz