Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2007MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Frey, L.; Ryssel, H.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.
Journal Article
2004Electrical properties and conduction mechanisms in Hf(x)Ti(y)Si(z)O films obtained from novel MOCVD precursors
Paskaleva, A.; Lemberger, M.; Zürcher, S.; Bauer, A.J.
Conference Paper
2003Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2003Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursors
Zürcher, S.; Morstein, M.; Lemberger, M.; Bauer, A.J.
Conference Paper
2003Zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2002New single-source precursors for the MOCVD of high-kappa dielectric zirconium silicates to replace SiO2 in semiconducting devices
Zürcher, S.; Morstein, M.; Spencer, N.D.; Lemberger, M.; Bauer, A.
Journal Article
2001New precursors for MOCVD of high-k metal silicates as alternative to SiO2 in semiconducting devices
Zürcher, S.; Morstein, M.; Bauer, A.J.; Lemberger, M.
Poster