Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Conference Paper
2015On the voltage scaling potential of SONOS non-volatile memory transistors
Ocker, J.; Slesazeck, S.; Mikolajick, T.; Buschbeck, S.; Günther, S.; Yurchuk, E.; Hoffmann, R.; Beyer, V.
Conference Paper
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Conference Paper
2014Ferroelectric hafnium oxide: A game changer to FRAM?
Müller, J.; Polakowski, P.; Riedel, S.; Mueller, S.; Yurchuk, E.; Mikolajick, T.
Conference Paper
2014Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
Martin, D.; Müller, J.; Schenk, T.; Arruda, T.M.; Kumar, A.; Strelcov, E.; Yurchuk, E.; Müller, S.; Pohl, D.; Schröder, U.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of scaling on the performance of HfO2-based ferroelectric field effect transistors
Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müller, S.; Slesazeck, S.; Schroeder, U.; Boschke, R.; Bentum, R. van; Mikolajick, T.
Journal Article
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
2013(Invited) Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Martin, D.; Müller, J.; Yurchuk, E.; Mueller, S.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T.
Journal Article
2013Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Mueller, S.; Mueller, J.; Yurchuk, E.; Martin, D.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Yurchuk, E.; Müller, J.; Knebel, S.; Sundqvist, J.; Graham, A.P.; Melde, T.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology
Mueller, S.; Yurchuk, E.; Slesazeck, S.; Mikolajick, T.; Müller, J.; Herrmann, T.; Zaka, A.
Conference Paper
2012Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Muller, Stefan; Muller, Johannes; Paul, Jan; Sundquist, Jonas
Conference Paper
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Non-volatile data storage in HfO2-based ferroelectric FETs
Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.
Conference Paper
2010An empirical model describing the MLC retention of charge trap flash memories
Melde, T.; Hoffmann, R.; Yurchuk, E.; Paul, J.; Mikolajick, T.
Conference Paper