Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices
Tejedor, P.; Drescher, M.; Vázquez, L.; Wilde, L.
Journal Article
2015Co-evaporant induced crystallization of zinc phthalocyanine: C60 blends for solar cells
Holzmueller, Felix; Wilde, Lutz; Wölzl, Florian; Koerner, Christian; Vandewal, Koen; Leo, Karl
Journal Article
2014ALD ZrO2 processes for BEoL device applications
Weinreich, Wenke; Seidel, Konrad; Polakowski, Patrick; Riedel, Stefan; Wilde, Lutz; Sundqvist, Jonas; Triyoso, Dina H.; Nolan, Mark G.
Conference Paper
2014Depth-resolved transport measurements and atom-probe tomography of heterogeneous, superconducting Ge:Ga films
Heera, V.; Fiedler, J.; Naumann, M.; Skrotzki, R.; Kölling, S.; Wilde, L.; Herrmannsdörfer, T.; Skorupa, W.; Wosnitza, J.; Helm, M.
Journal Article
2014Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress
Lagger, Peter; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, Andreas; Müller, Johannes; Wilde, Lutz; Sundqvist, Jonas; Pogany, D.
Journal Article
2014Thin film growth of Fe-based superconductors: From fundamental properties to functional devices
Haindl, S.; Kidszun, M.; Oswald, S.; Hess, C.; Büchner, B.; Kölling, S.; Wilde, L.; Thersleff, T.; Yurchenko, V.V.; Jourdan, M.; Hiramatsu, H.; Hosono, H.
Journal Article
2013Crystallographic texture of submicron thin aluminum nitride films on molybdenum electrode for suspended micro and nanosystems
Sah, R.E.; Kirste, L.; Kirmse, H.; Mildner, M.; Wilde, L.; Kopta, S.; Knöbber, F.; Krieg, M.; Cimalla, V.; Lebedev, V.; Ambacher, O.
Journal Article
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Journal Article
2012Phase separation analysis of bulk heterojunctions in small-molecule organic solar cells using zinc-phthalocyanine and C-60
Schunemann, C.; Wynands, D.; Wilde, L.; Hein, M.P.; Pfutzner, S.; Elschner, C.; Eichhorn, K.J.; Leo, K.; Riede, M.
Journal Article
2011Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3-based devices studied with AFM-related techniques
Lanza, M.; Porti, M.; Nafria, M.; Aymerich, X.; Benstetter, G.; Lodermeier, E.; Ranzinger, H.; Jaschke, G.; Teichert, S.; Wilde, L.; Michalowski, P.P.
Journal Article
2011Determining the C60 molecular arrangement in thin films by means of X-ray diffraction
Elschner, C.; Levin, A.A.; Wilde, L.; Grenzer, J.; Schroer, C.; Leo, K.; Riede, M.
Journal Article
2011Ferroelectricity in yttrium-doped hafnium oxide
Müller, J.; Schröder, U.; Böscke, T.S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.M.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.
Journal Article
2011Synthesis of SrTiO3 by crystallization of SrO/TiO2 superlattices prepared by atomic layer deposition
Riedel, Stefan; Neidhardt, J.; Jansen, S.; Wilde, Lutz; Sundqvist, Jonas; Erben, E.; Teichert, S.; Michaelis, A.
Journal Article
2010Aluminum-rich TiAlCN coatings by low pressure CVD
Endler, I.; Höhn, M.; Herrmann, M.; Holzschuh, H.; Pitonak, R.; Ruppi, S.; Berg, H. van den; Westphal, H.; Wilde, L.
Journal Article, Conference Paper
2010Physical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies
Kelwing, T.; Mutas, S.; Trentzsch, M.; Naumann, A.; Trui, B.; Herrmann, L.; Graetsch, F.; Klein, C.; Wilde, L.; Ohsiek, S.; Weisheit, M.; Peeva, A.; Richter, I.; Prinz, H.; Wuerfel, A.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W.
Conference Paper
2010Thermal ALD of SrTiO3 films using Sr(iPr3Cp)2 and Star-Ti
Riedel, S.; Sundqvist, J.; Wilde, L.; Boitier, L.; Wilde, C.; Blasco, N.; Lachaud, C.; Zauner, A.; Michaelis, A.
Poster
2009Atomic layer deposition of titanium dioxide thin films from Cp*Ti(OMe)3 and ozone
Rose, M.; Niinistö, J; Michalowski, P.; Gerlich, L.; Wilde, L.; Endler, I.; Bartha, J.W.
Journal Article
2009Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.
Conference Paper, Journal Article
2009Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
Lanza, M.; Porti, M.; Nafria, M.; Aymerich, X.; Benstetter, G.; Lodermeier, E.; Ranzinger, H.; Jaschke, G.; Teichert, S.; Wilde, L.; Michalowski, P.
Conference Paper, Journal Article
2009Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics
Schroeder, U.; Weinreich, W.; Erben, E.; Mueller, J.; Wilde, L.; Heitmann, J.; Agaiby, R.; Zhou, D.; Jegert, G.; Kersch, A.
Conference Paper
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2009Properties of plasma-enhanced atomic layer deposition-grown tantalum carbonitride thin films
Hossbach, C.; Teichert, S.; Thomas, J.; Wilde, L.; Wojcik, H.; Schmidt, D.; Adolphi, B.; Bertram, M.; Mühle, U.; Albert, M.; Menzel, S.; Hintze, B.; Bartha, J.W.
Journal Article
2009TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
Monaghan, S.; Cherkaoui, K.; O'Connor, E.; Djara, V.; Hurley, P.K.; Oberbeck, L.; Tois, E.; Wilde, L.; Teichert, S.
Journal Article
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster

 

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