Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and Al(x)Ga(1-x)N
Köhler, K.; Gutt, R.; Wiegert, J.; Kirste, L.
Journal Article
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Journal Article, Conference Paper
2011Reactor dependent starting transients of doping profiles in MOVPE grown GaN
Köhler, K.; Gutt, R.; Müller, S.; Wiegert, J.; Menner, H.; Kirste, L.; Protzmann, H.; Heuken, M.
Journal Article
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2009Determination of surface potential of GaN:Si
Köhler, K.; Maier, M.; Kirste, L.; Wiegert, J.; Menner, H.
Journal Article, Conference Paper
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Reduction of the threading edge disclocation density in AlGaN epilayers by GaN nucleation
Gutt, R.; Kirste, L.; Wiegert, J.; Luick, D.; Köhler, K.
Conference Paper
2008Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J.
Conference Paper, Journal Article
2008The surface potential of GaN:Si
Köhler, K.; Wiegert, J.; Menner, H.P.; Maier, M.; Kirste, L.
Journal Article
2006Mg doping profile in III-N light emitting diodes in close proximity to the active region
Köhler, K.; Perona, A.; Maier, M.; Wiegert, J.; Kunzer, M.; Wagner, J.
Journal Article
2005Control of the Mg doping profile in III-N light-emitting diodes and its effect on the elecroluminescence efficiency
Köhler, K.; Stephan, T.; Perona, A.; Wiegert, J.; Maier, M.; Kunzer, M.; Wagner, J.
Journal Article
1989Properties of WSix-Schottky diodes on n-type GaAs sputtered under UHV background conditions
Pletschen, W.; Kaufel, G.; Maier, M.; Olander, E.; Wiegert, J.; Bachem, K.H.; Rupprecht, H.S.
Conference Paper
1988Verbesserte Zusatzausrüstung für C-Au-C-Au-.. -Beschichtungen mit dem Balzers-Gerät MED 010
Hoffmann, C.; Dian, R.; Wiegert, J.
Conference Paper