Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation
Wiedmann, N.; Schmitz, J.; Boucke, K.; Herres, N.; Wagner, J.; Mikulla, M.; Poprawe, R.; Weimann, G.
Journal Article
2002Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
Rinner, F.; Rogg, J.; Wiedmann, N.; Konstanzer, H.; Dammann, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Conference Paper
2002High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm
Kelemen, M.T.; Rinner, F.; Rogg, J.; Wiedmann, N.; Kiefer, R.; Walther, M.; Mikulla, M.; Weimann, G.
Conference Paper
2002Hochleistungsdiodenlaser für Hochtemperaturanwendungen
Wiedmann, N.
Dissertation
2001Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G.
Conference Paper
2000Improved high-temperature operation of InGaAs/AlGaAs high-power quantum well lasers by short-period superlattice barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G.
Conference Paper
2000Packaging and characterization of high-power diode lasers
Jandeleit, J.; Wiedmann, N.; Ostlender, A.; Brandenburg, W.; Loosen, P.; Poprawe, R.
Conference Paper
2000Reliability and degradation mechanisms of InGa(Al)As/GaAs DQW high-power diode lasers
Kreutz, E.W.; Wiedmann, N.; Jandeleit, J.; Hoffmann, D.; Loosen, P.; Poprawe, R.
Journal Article
1999Fabrication and characterization of high power diode lasers
Jandeleit, J.; Wiedmann, N.; Ostlender, A.; Brandenburg, W.; Loosen, P.; Poprawe, R.
Conference Paper