Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Conference Paper
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F.
Dissertation
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Ambacher, Oliver (Referent); Schwierz, Frank (Referent)
Dissertation
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Conference Paper
2016Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Conference Paper
2016Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
Conference Paper
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2014Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2013Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper