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| 2005 | Spectroscopic techniques for characterization of high-mobility strained-Si CMOS
Schmidt, J.; Vogg, G.; Bensch, F.; Kreuzer, S.; Ramm, P.; Zollner, S.; Liu, R.; Wennekers, P. | Conference Paper, Journal Article |
| 1998 | O/e-MCM packaging with new, patternable dielectric and optical materials
Robertsson, M.E.; Hagel, O.-J.; Gustafson, G.; Dabek, A.; Popall, M.; Cergel, L.; Wennekers, P.; Kiely, P.; Lebby, M.; Lindahl, T. | Conference Paper |
| 1994 | Feldeffekttransistor und Verfahren zum Herstellen eines Feldeffekttransistors
Wennekers, P. | Patent |
| 1993 | Elektronische Schaltung zur Messung der Phasen- und Frequenzdifferenz zweier periodischer Signale
Wennekers, P. | Patent |
| 1992 | 10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Hurm, V.; Lang, M.; Ludwig, G.; Hülsmann, A.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wang, Z.-G.; Wennekers, P. | Conference Paper |
| 1992 | 10-Gb/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs technology.
Hülsmann, A.; Schneider, J.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wennekers, P. | Journal Article |
| 1992 | Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology.
Reinert, W.; Hülsmann, A.; Schneider, J.; Bosch, R.; Kaufel, G.; Köhler, K.; Raynor, B.; Wennekers, P. | Journal Article |
| 1991 | 10 Gbit/s bit-synchronizer with automatic retiming clock alignement using Quantum Well AlGaAs/GaAs/AlGaAs technology
Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.; Wennekers, P. | Conference Paper |
| 1991 | 10 Gbit/s low-power bit synchroniser with automatic retiming phase alignment.
Wennekers, P.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K. | Journal Article |
| 1991 | 14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology.
Wennekers, P.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K. | Journal Article |
| 1990 | Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P. | Conference Paper |
| 1990 | Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P. | Journal Article |
| 1989 | Feldeffekttransistor
Smith, R.; Wennekers, P. | Patent |
| 1989 | SCHOTTKY-DIODE.
Smith, R.; Wennekers, P. | Patent |
| 1988 | Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy.
Herres, N.; Richter, H.J.; Seelmann-Eggebert, M.; Smith, R.; Wennekers, P. | Journal Article |
| 1987 | Erbium doping of molecular beam epitaxial GaAs
Smith, R.S.; Müller, H.D.; Wennekers, P.; Maier, M.; Ennen, H. | Journal Article |