Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
Arzig, M.; Steiner, J.; Salamon, M.; Uhlmann, N.; Wellmann, P.J.
Journal Article
2019Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization
Arzig, M.; Salamon, M.; Uhlmann, N.; Wellmann, P.J.
Journal Article
2018Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
Arzig, M.; Salamon, M.; Uhlmann, N.; Johansen, B.A.; Wellmann, P.J.
Conference Paper
2016Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
Wellmann, P.J.; Fahlbusch, L.; Salamon, M.; Uhlmann, N.
Conference Paper
2014Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
Neubauer, G.; Salamon, M.; Uhlmann, N.; Wellmann, P.J.
Conference Paper
2013Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
Neubauer, G.; Salamon, M.; Roider, F.; Uhlmann, N.; Wellmann, P.J.
Conference Paper
2007Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
Wellmann, P.J.; Karl, U.; Kleber, S.; Schmitt, H.
Journal Article
2004Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
Wellmann, P.J.; Albrecht, A.; Künecke, U.; Birkmann, B.; Müller, G.; Jurisch, M.
Journal Article