Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Cleanrooms with low molecular organic contamination (MOC): From material classification measurements to different assessment methods regarding organic condensables
Keller, Markus; Weisser, Stefanie; Gommel, Udo
Conference Paper
2015MOC-Kondensationsrate - Neue Bewertungszahl für die Leistungsbeurteilung von Reinräumen?
Keller, Markus; Weisser, Stefanie
Journal Article
2015MOC-Kondensationsrate - Neue Bewertungszahl für die Leistungsbeurteilung von Reinräumen?
Keller, Markus; Weisser, Stefanie
Journal Article
2015MOC-Kondensationsrate - Neue Bewertungszahl für die Leistungsbeurteilung von Reinräumen?
Keller, Markus; Weisser, Stefanie
Journal Article
2015Wenn aus Stunden Tage werden - VPHP-Adsorptions-/Desorptionsverhalten verschiedener Materialien
Keller, Markus; Weisser, Stefanie
Journal Article
2014Adsorption/Desorption von VPHP durch Materialien
Keller, Markus; Weisser, Stefanie; Hägele, Sonja
Presentation
2014Luftgetragene molekulare Verunreinigungen (ACC). Aktuelle Forschungsergebnisse
Keller, Markus; Weisser, Stefanie
Presentation
2014When hours become days - the adsorption and desorption behavior of different materials with regard to hydrogen peroxide
Keller, Markus; Weisser, Stefanie
Conference Paper
2007160 Gb/s RZ-DPSK OTDM-transmission over 480 km using 160 km repeater spans and advanced forward-error-correction
Ludwig, R.; Weisser, S.; Schmidt-Langhorst, C.; Raddatz, L.; Schubert, C.
Conference Paper
200760 Gbit/s RZ-DPSK OTDM-transmission over 480 km using 160 km repeater spans
Schubert, C.; Ludwig, R.; Weisser, S.; Schmidt-Langhorst, C.; Raddatz, L.
Conference Paper
2007Transmission Systems beyond 100 Gbit/s
Ludwig, R.; Schmidt-Langhorst, C.; Hüttl, B.; Schubert, C.; Weisser, S.; Raddatz, L.
Conference Paper
2007Unrepeated Transmission of 160 Gb/s RZ-DPSK over 293 km Dispersion Managed Fiber using Optimized Raman Amplification and Advanced Forward-Error-Correction
Ludwig, R.; Weisser, S.; Schmidt-Langhorst, C.; Raddatz, L.; Schubert, C.
Conference Paper
2007Unrepeatered transmission of 160 Gb/s RZ-DPSK over 240 km dispersion managed fiber
Ludwig, R.; Weisser, S.; Schmidt-Langhorst, C.; Raddatz, L.; Schubert, C.
Conference Paper
20062000 km DWDM transmission of 85.2 Gbit/s DQPSK data with 100 GHz channel spacing over non-zero dispersion shifted fiber
Weisser, S.; Raddatz, L.; Ludwig, R.; Schubert, C.
Conference Paper
20065.4 bit/s (64*85.2) Gbit/s DQPSK transmission with 100 Ghz channel spacing over 2000 km non-zero dispersion shifted fiber
Ludwig, R.; Schubert, C.; Weisser, S.; Raddatz, L.
Conference Paper
2006Single- and alternating-polarization 170-Gb/s transmission up to 4000 km using dispersion-managed fiber and all-Raman amplification
Weisser, S.; Ferber, S.; Raddatz, L.; Ludwig, R.; Benz, A.; Boerner, C.; Weber, H.-G.
Journal Article
2005170 Gbit/s single-polarization transmission over 650 km SSMF with 130 km spans using RZ-DPSK
Weisser, S.; Raddatz, L.; Benz, A.; Ferber, S.; Boerner, C.; Ludwig, P.; Weber, H.G.
Conference Paper
2005Burst switching capability of electro-optical PLL-based clock recovery for 170 Gbit/s
Boerner, C.; Ludwig, R.; Ferber, S.; Weber, H.G.; Weisser, S.; Benz, A.; Raddatz, L.
Conference Paper
2005Single-channel 170 Gbit/s transmission up to 4000 km using dispersion-managed fiber spans and all-Raman amplification
Ludwig, R.; Weisser, S.; Raddatz, L.; Benz, A.; Ferber, S.; Boerner, C.; Weber, H.G.
Conference Paper
2000Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Arias, J.; Esquivias, I.; Larkins, E.C.; Burkner, S.; Weisser, S.; Rosenzweig, J.
Journal Article
1999Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1999Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1999Intensity modulation and chirp of 1.55-mu m multiple-quantum well laser diodes. Modeling and experimental verification
Czotscher, K.; Weisser, S.; Leven, A.; Rosenzweig, J.
Journal Article
199820 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G.
Conference Paper
1997Carrier escape time in quantum well lasers: dependence on injection level, doping concentration, and temperature
Romero, B.; Esquivias, I.; Arias, J.; Batko, G.; Weisser, S.; Rosenzweig, J.
Conference Paper
1997Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J.
Conference Paper
1997Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes
Czotscher, K.; Weisser, S.; Länge, R.; Benz, W.; Burkhard, H.; Hillmer, H.; Steinhagen, F.; Kiefer, R.; Lösch, R.; Pletschen, W.; Walcher, H.; Walther, M.; Rosenzweig, J.
Conference Paper
1997Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Torre, M.S.; Esquivias, I.; Romero, B.; Czotscher, K.; Weisser, S.; Ralston, J.D.; Larkins, E.; Benz, W.; Rosenzweig, J.
Journal Article
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1997Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1996Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1996Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Journal Article
1996Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Journal Article
1996Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures
Sah, R.E.; Ralston, J.D.; Daleiden, J.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Benz, W.
Journal Article
1996Hybrid integration of laser diode chips on a glass substrate
Cabon, B.; Hilt, A.; Vilcot, A.; Czotscher, K.; Weisser, S.; Berceli, T.
Conference Paper
1996Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Schönfelder, A.; Ralston, J.D.; Czotscher, K.; Weisser, S.; Rosenzweig, J.; Larkins, E.C.
Journal Article
1996Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I.
Journal Article
1996Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
199537 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
1995Characteristics of a two-component chemically-assisted ion-beam etching techniques for dry etching of high-speed multiple quantum well laser mirrors
Sah, R.E.; Ralston, J.D.; Weisser, S.; Eisele, K.
Journal Article
1995CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Book Article
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Journal Article
1995Picosecond spectroscopy of optically modulated high-speed laser diodes.
Sutter, D.H.; Schneider, H.; Weisser, S.; Ralston, J.D.; Larkins, E.C.
Journal Article
1995Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J.
Conference Paper
1995Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1994Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J.
Conference Paper
1994DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.
Conference Paper
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Conference Paper
1994Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers - influence of strain and p-doping
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Conference Paper
1994Hochfrequenzverhalten von GaAs/AlGaAs und pseudomorphen InGaAs/GaAs Mehrfach-Quantenfilm-Laserdioden
Weisser, S.
Dissertation
1994Impedance characteristics of quantum-wells lasers
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Romero, B.; Rosenzweig, J.
Journal Article
1994Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Conference Paper
1994Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.
Journal Article
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Conference Paper
1994Theoretical investigation of gain enhancements in strained In0.35Ga0.65As/Gas MQW lasers via p-doping.
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.
Journal Article
199330 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1993Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Conference Paper
1993Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Journal Article
1993Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J.
Journal Article
1993Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.
Conference Paper
1993Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Conference Paper
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Journal Article
1993Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.
Conference Paper
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Conference Paper
1992Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J.
Conference Paper
1992Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J.
Conference Paper
1992Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Journal Article
1992High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1992Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J.
Conference Paper
1992Modelling and characterization of high-speed GaAs and In0.35Ga0.65As multiple-quantum-well laser diodes
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Gallagher, D.F.G.
Conference Paper
1992Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1992Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J.
Conference Paper