Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1993High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence
Wang, Z.M.; Windscheif, J.; As, D.J.; Jantz, W.
Journal Article
1993MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W.
Journal Article
1993Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Journal Article
1992Low temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells.
As, D.J.; Korf, S.; Wang, Z.M.; Bachem, K.H.; Jantz, W.; Windscheif, J.
Journal Article
1992Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Conference Paper
1992Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy.
Wang, Z.M.; As, D.J.; Windscheif, J.; Bachem, K.H.; Jantz, W.
Journal Article
1991Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers.
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Journal Article
1991Electron temperature and lifetime mapping of photoexcited carrier in semiinsulating LEC GaAs substrates by photoluminescence
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Conference Paper