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| 2012 | Fractal structures for low-resistance large area AlGaN/GaN power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J. | Conference Paper |
| 2012 | Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2012 | Novel III-N devices: Progess on GaN-based DC-DC converters for space
Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors
Gutt, R.; Himmerlich, M.; Fenske, M.; Müller, S.; Lim, T.; Kirste, L.; Waltereit, P.; Köhler, K.; Krischok, S.; Fladung, T. | Journal Article |
| 2011 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R. | Journal Article |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, A.O. | Journal Article |
| 2011 | Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2010 | AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2010 | Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Quay, R.; Müller, S.; Ambacher, O. | Journal Article |
| 2010 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Müller, S.; Ambacher, O. | Journal Article, Conference Paper |
| 2010 | Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R. | Journal Article, Conference Paper |
| 2010 | GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O. | Journal Article |
| 2010 | Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs
Kühn, J.; Waltereit, P.; Raay, F. van; Aidam, R.; Quay, R.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2010 | High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | Impact of Al content on transport properties of two-dimensional electron gas in GaN/Al(x)Ga(1-x)N/GaN heterostructures
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Köhler, K.; Müller, S.; Waltereit, P.; Ambacher, O. | Journal Article |
| 2010 | Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R. | Journal Article |
| 2010 | Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T. | Journal Article |
| 2010 | Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K. | Conference Paper |
| 2010 | Repeatable submicron AlGaN/GaN devices and MMICs
Quay, R.; Waltereit, P. | Conference Paper |
| 2010 | Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R. | Journal Article |
| 2010 | Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures
Kirste, L.; Lim, T.; Aidam, R.; Müller, S.; Waltereit, P.; Ambacher, O. | Journal Article |
| 2009 | Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Conference Paper, Journal Article |
| 2009 | Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P. | Conference Paper |
| 2009 | GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Journal Article |
| 2009 | Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R. | Journal Article |
| 2009 | Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O. | Journal Article |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2009 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Journal Article, Conference Paper |
| 2009 | Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, M.; Cäsar, M.; Waltereit, P.; Bronner, W.; Konstanzer, H.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K. | Conference Paper |
| 2009 | Verfahren zur Bestimmung der Struktur eines Transistors
Koehler, K.; Mueller, S.; Waltereit, P. | Patent |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Conference Paper |
| 2008 | High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G. | Journal Article |
| 2008 | High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K. | Conference Paper |
| 2008 | Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P. | Journal Article |
| 2008 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Conference Paper |
| 2008 | A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al. | Conference Paper |
| 2002 | Anharmonicity of the E2(high) and A(1)(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H. | Journal Article |
| 2001 | Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H. | Journal Article |