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| 2020 | Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
Besendörfer, S.; Meissner, E.; Zweipfennig, T.; Yacoub, H.; Fahle, D.; Behmenburg, H.; Kalisch, H.; Vescan, A.; Friedrich, J.; Erlbacher, T. | Journal Article |
| 2019 | Comparison of MOCVD and MBE regrowth for CAVET fabrication
Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei | Journal Article |
| 2015 | Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
Hahn, H.; Reuters, B.; Geipel, S.; Schauerte, M.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A. | Journal Article |
| 2015 | Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
Hahn, H.; Benkhelifa, Fouad; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A. | Journal Article |
| 2013 | GaN-on-Si enhancement mode metal insulator semiconductor heterostructure field effect transistor with on-current of 1.35A/mm
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Alam, A.; Heuken, M.; Yacoub, H.; Noculak, A.; Kalisch, H.; Vescan, A. | Journal Article |
| 2012 | First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
Hahn, H.; Reuters, B.; Wille, A.; Ketteniss, N.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A. | Journal Article |
| 2001 | Heat-spreading diamond films for GaN-based high-power transistor devices
Seelmann-Eggebert, M.; Meisen, P.; Schaudel, F.; Kiodl, P.; Vescan, A.; Leier, H. | Journal Article |