Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020FeFET: A versatile CMOS compatible device with game-changing potential
Beyer, S.; Dünkel, S.; Trentzsch, M.; Müller, J.; Hellmich, A.; Utess, D.; Paul, J.; Kleimaier, D.; Pellerin, J.; Müller, S.; Ocker, J.; Benoist, A.; Zhou, H.; Mennenga, M.; Schuster, M.; Tassan, F.; Noack, M.; Pourkeramati, A.; Müller, F.; Lederer, M.; Ali, T.; Hoffmann, R.; Kämpfe, T.; Seidel, K.; Mulaosmanovic, H.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S.
Conference Paper
2020Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction
Lederer, M.; Kämpfe, T.; Vogel, N.; Utess, D.; Volkmann, B.; Ali, T.; Olivo, R.; Müller, J.; Beyer, S.; Trentzsch, M.; Seidel, K.; Eng, L.M.
Journal Article
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Conference Paper
2014ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM
Triyoso, D.H.; Weinreich, W.; Seidel, K.; Nolan, M.G.; Polakowski, P.; Utess, D.; Ohsiek, S.; Dittmar, K.; Weisheit, M.; Liebau, M.; Fox, R.
Conference Paper
2014Understanding the materials, electrical and reliability impact of Al-addition to ZrO2 for BEOL compatible MIM capacitors
Triyoso, D.H.; Chu, S.; Seidel, K.; Weinreich, W.; Yiang, K.-Y.; Nolan, M.G.; Brunco, D.P.; Rinderknecht, J.; Utess, D.; Kyono, C.; Miller, R.; Park, J.; Cheng, L.; Liebau, M.; Lomtscher, P.; Fox, R.
Conference Paper
2012Physical characterization of PECVD and PEALD Ru(-C) films and comparison with PVD ruthenium film properties
Wojcik, H.; Junige, M.; Bartha, W.; Albert, M.; Neumann, V.; Merkel, U.; Peeva, A.; Gluch, J.; Menzel, S.; Munnik, F.; Liske, R.; Utess, D.; Richter, I.; Klein, C.; Engelmann, H.J.; Ho, P.; Hossbach, C.; Wenzel, C.
Journal Article