Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Journal Article
2015Effect of bulk potential engineering on the transport properties of SiC MOSFETs: Characterization and interpretation
Uhnevionak, Viktroyia
Conference Paper
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Journal Article
2015Simulation and modeling of silicon carbide devices
Uhnevionak, Viktroyia
: Pichler, Peter; Weigel, Robert
Dissertation
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Conference Paper
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Conference Paper
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Conference Paper
2013Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2013On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Conference Paper
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Conference Paper
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Conference Paper
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Presentation