Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Degradation studies of modified inulin as potential encapsulation material for colon targeting and release of mesalamine
Walz, Michael; Hagemann, Diana; Trentzsch, Marcus; Weber, Achim; Henle, Thomas
Journal Article
2018A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S.
Conference Paper
2017Charakterisierung der Zuverlässigkeit in der High-k Metal Gate Technologie
Drescher, Maximilian; Erben, Elke; Grass, Carsten; Trentzsch, Martin; Lazarevic, Florian; Leitsmann, Roman; Plaenitz, Philipp; Mchedlidze, Teimuraz; Seidel, Konrad; Liske, Romy; Bartha, Johann Wolfgang
Conference Paper
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Conference Paper
2015Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology
Drescher, M.; Naumann, A.; Sundqvist, J.; Erben, E.; Grass, C.; Trentzsch, M.; Lazarevic, F.; Leitsmann, R.; Plaenitz, P.
Journal Article
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Non-volatile data storage in HfO2-based ferroelectric FETs
Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.
Conference Paper
2011Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies
Kelwing, T.; Naumann, A.; Trentzsch, M.; Graetsch, F.; Bayha, B.; Herrmann, L.; Trui, B.; Rudolph, D.; Lipp, D.; Krause, G.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W.
Journal Article
2010Comparison of MOCVD- and ALD-deposited $ hbox {HfZrO} {4} gate dielectrics for 32-nm high-performance logic SOI CMOS technologies
Kelwing, T.; Naumann, A.; Trentzsch, M.; Trui, B.; Herrmann, L.; Mutas, S.; Graetsch, F.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W.
Journal Article
2010Physical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies
Kelwing, T.; Mutas, S.; Trentzsch, M.; Naumann, A.; Trui, B.; Herrmann, L.; Graetsch, F.; Klein, C.; Wilde, L.; Ohsiek, S.; Weisheit, M.; Peeva, A.; Richter, I.; Prinz, H.; Wuerfel, A.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W.
Conference Paper
2010SiGe channels for higher mobility CMOS devices
Naumann, A.; Kelwing, T.; Trentzsch, M.; Kronholz, S.; Kammler, T.; Flachowsky, S.; Herrmann, T.; Kücher, P.; Bartha, J.W.
Conference Paper