Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Narrow linewidth micro-integrated high power diode laser module for deployment in space
Christopher, H.; Arar, B.; Bawamia, A.; Kürbis, C.; Lewoczko-Adamczyk, W.; Schiemangk, M.; Smol, R.; Wicht, A.; Peters, A.; Tränkle, G.
Conference Paper
2017New 808 nm high power laser diode pump module for space applications
Schwander, T.; Heine, F.; Lange, R.; Smutny, B.; Erbert, G.; Pittroff, W.; Tränkle, G.; Hoffmann, H.-D.; Plum, H.-D.; Traub, M.
Conference Paper
201525-W monolithic spectrally stabilized 975-nm minibars for dense spectral beam combining
Decker, J.; Crump, P.; Fricke, J.; Maaßdorf, A.; Traub, M.; Witte, U.; Brand, T.; Unger, A.; Erbert, G.; Tränkle, G.
Journal Article
2013Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
Redaelli, L.; Wenzel, H.; Weig, T.; Lükens, G.; Einfeldt, S.; Schwarz, U.T.; Kneissl, M.; Tränkle, G.
Conference Paper
2013Low-loss, smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency
Crump, P.; Knigge, S.; Maaßdorf, A.; Bugge, F.; Hengesbach, S.; Witte, U.; Hoffmann, H.D.; Köhler, B.; Hubrich, R.; Kissel, H.; Biesenbach, J.; Erbert, G.; Tränkle, G.
Conference Paper
2012High-power diode lasers optimized for low-loss smile-insensitive external spectral stabilization
Crump, P.; Hengesbach, S.; Witte, U.; Hoffmann, H.-D.; Erbert, G.; Tränkle, G.
Journal Article
2000Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors
: Ploog, K.H.; Tränkle, G.; Weimann, G.
Conference Proceedings
2000Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Würfl, J.; Hilsenbeck, J.; Nebauer, E.; Tränkle, G.; Obloh, H.; Österle, W.
Conference Paper
1998Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.
Journal Article
1998MBE growth of metamorphic In(Ga)AlAs buffers
Sexl, M.; Böhm, G.; Maier, M.; Tränkle, G.; Weimann, G.; Abstreiter, G.
Conference Paper
1998Photogalvanic effect in asymmetric quantum wells and superlattices
Schneider, H.; Ehret, S.; Schönbein, C.; Schwarz, K.; Bihlmann, G.; Fleissner, J.; Tränkle, G.; Böhm, G.
Journal Article
1997Study of composition and critical-point broadening in InAs/Ga(1-x)In(x)Sb superlattices using spectroscopic ellipsometry
Wagner, J.; Schmitz, J.; Herres, N.; Tränkle, G.; Koidl, P.
Journal Article
1996Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics
Wagner, J.; Schmitz, J.; Fuchs, F.; Weimar, U.; Herres, N.; Tränkle, G.; Koidl, P.
Conference Paper
1984High speed electron-hole plasma transport in silicon
Axmann, A.; Forchel, A.; Laurich, B.; Traenkle, G.; Hillmer, H.; Mahler, G.; Hoai, T.X.
Book Article