Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Conference Paper
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2018Architecture of highly integrated cryogenic active planar OrthoMode transducer for the 3-mm band
Valente, G.; Navarrini, A.; Schaefer, F.; Serres, P.; Thome, Fabian
Conference Paper
2018Broadband high-power W-band amplifier MMICs based on stacked-HEMT unit cells
Thome, Fabian; Leuther, Arnulf; Schlechtweg, Michael; Ambacher, Oliver
Journal Article
2018Compact dual-polarization cryogenic receiver module for the 75-116 GHz band
Navarrini, Alessandro; Valente, Giuseppe; Serres, Patrice; Schäfer, Frank; Thome, Fabian; Garnier, Olivier
Conference Paper
2018Design of active waveguide OMT for radio astronomy receiver array in the 3 mm band
Navarrini, Alessandro; Valente, Giuseppe; Serres, Patrice; Schäfer, Frank; Thome, Fabian; Garnier, Olivier
Conference Paper
2018Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
Thome, Fabian; Ambacher, Oliver
Journal Article
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Conference Paper
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2016An investigation of millimeter wave switches based on shunt transistors including SPDT switch MMICs up to 300 GHz
Thome, F.; Ohlrogge, M.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
Tessmann, A.; Leuther, A.; Massler, H.; Wagner, S.; Thome, F.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
Thome, F.; Maroldt, S.; Ambacher, O.
Journal Article
2016Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
Moschetti, G.; Thome, F.; Ohlrogge, M.; Goliasch, J.; Schäfer, F.; Aja, B.; Leuther, A.; Schlechtweg, M.; Seelmann-Eggebert, M.; Ambacher, O.; Wieching, G.; Kotiranta, M.
Journal Article
2016A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance
Thome, F.; Ambacher, O.
Conference Paper
2015Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
Thome, F.; Maroldt, S.; Ambacher, O.
Conference Paper
2014A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
Thome, F.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Journal Article
2013Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50 nm InGaAs mHEMT technology
Thome, F.; Massler, H.; Wagner, S.; Leuther, A.; Kallfass, I.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2012A tunable 140GHz analog phase shifter with high linearity performance
Thome, F.; Diebold, S.; Schlechtweg, M.; Leuther, A.; Ambacher, O.; Kallfass, I.
Conference Paper
2011Entwurf differentieller kryogener Breitbandverstärker
Thome, F.
Thesis